Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film.

Abstract: A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A method is used for releasing a graphene layer from a substrate. A graphene layer is first formed on a surface of a first substrate. A metal layer is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an AlxGa1-xAs (0.6>x?0) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the AlxGa1-xAs (0.6>x?0) in direct contact with the metal layer.

Abstract: In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

Abstract: A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an AlxGa1-xAs (0.6>x?0) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the AlxGa1-xAs (0.6>x?0) in direct contact with the metal layer.

Abstract: A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial layer, the cubic semiconductor layer having at least a surface of cubic crystal structure. A cubic silicon carbide single crystal layer is formed on the cubic semiconductor layer. The sacrificial layer is etched away to release a multilayer structure of the cubic semiconductor layer and the 3C—SiC layer from the substrate. A cubic silicon carbide single crystal thin film of a multilayer structure includes an AlxGa1-xAs (0.6>x?0) layer and a cubic silicon carbide single crystal layer. A metal layer is formed on a substrate. The multilayer structure is bonded to the metal layer with the AlxGa1-xAs (0.6>x?0) in direct contact with the metal layer.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: A combined semiconductor apparatus has a substrate, a thin semiconductor film attached directly or indirectly to one major surface of the substrate, and a lens attached to the opposite surface of the substrate. The thin semiconductor film includes a light-emitting element that emits light through the substrate. After passing through the substrate, the emitted light is focused by the lens. The substrate functions as a spacing element, assuring that the lens is positioned at the correct distance from the light-emitting element without the need for separate alignment. The substrate also holds the lens without the need for a separate lens holder. Driving circuitry may also be formed on the substrate.

Abstract: A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost.

Abstract: A method is used for releasing a graphene layer from a substrate. A graphene layer is first formed on a surface of a first substrate. A metal layer is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching.

Abstract: In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.

Abstract: A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial layer, the cubic semiconductor layer having at least a surface of cubic crystal structure. A cubic silicon carbide single crystal layer is formed on the cubic semiconductor layer. The sacrificial layer is etched away to release a multilayer structure of the cubic semiconductor layer and the 3C—SiC layer from the substrate. A cubic silicon carbide single crystal thin film of a multilayer structure includes an AlxGa1-xAs (0.6>×?0) layer and a cubic silicon carbide single crystal layer. A metal layer is formed on a substrate. The multilayer structure is bonded to the metal layer with the AlxGa1-xAs (0.6>×?0) in direct contact with the metal layer.