Abstract: A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film.

Abstract: A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The interconnecting line includes a pad located on the substrate, between the thin semiconductor film and the electrical circuitry. The pad, which is wider than other parts of the interconnecting line, can be used as a probe pad for testing the apparatus, and in particular for testing the electrical circuitry on the substrate before the thin semiconductor film is attached.

Abstract: In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

Abstract: A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.

Abstract: In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

Abstract: A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate.

Abstract: A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor apparatus includes a substrate; an adhesion layer disposed on the substrate, the adhesion layer mainly consisting of semiconductor material; and at least one semiconductor thin film including at least one semiconductor device and bonded on the adhesion layer. The adhesion layer may be a polycrystalline silicon layer or an amorphous silicon layer.

Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: A peeling layer (13) and semiconductor thin film (20a) are formed on a first substrate (11), individual support materials (19) are formed thereupon, grooves (23) penetrating the semiconductor thin film and reaching the peeling layer (13) are formed in the semiconductor thin film (20a) by etching using the individual support materials (19) as a mask so as to divide the semiconductor thin film (20a) into a plurality of semiconductor thin film pieces (20) and form a plurality of assemblies of the semiconductor thin film pieces (20) and the individual support materials (19) fixed thereto, the semiconductor thin film pieces (20) are separated from the first substrate (11) while the individual support materials (19) remain fixed to the semiconductor thin film pieces (20), and they are then affixed to a second substrate (31). The invention facilitates handling of semiconductor thin film pieces.

Abstract: A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The interconnecting line includes a pad located on the substrate, between the thin semiconductor film and the electrical circuitry. The pad, which is wider than other parts of the interconnecting line, can be used as a probe pad for testing the apparatus, and in particular for testing the electrical circuitry on the substrate before the thin semiconductor film is attached.

Abstract: In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.

Abstract: A combined semiconductor apparatus has a substrate, a thin semiconductor film attached directly or indirectly to one major surface of the substrate, and a lens attached to the opposite surface of the substrate. The thin semiconductor film includes a light-emitting element that emits light through the substrate. After passing through the substrate, the emitted light is focused by the lens. The substrate functions as a spacing element, assuring that the lens is positioned at the correct distance from the light-emitting element without the need for separate alignment. The substrate also holds the lens without the need for a separate lens holder. Driving circuitry may also be formed on the substrate.

Abstract: A peeling layer (13) and semiconductor thin film (20a) are formed on a first substrate (11), individual support materials (19) are formed thereupon, grooves (23) penetrating the semiconductor thin film and reaching the peeling layer (13) are formed in the semiconductor thin film (20a) by etching using the individual support materials (19) as a mask so as to divide the semiconductor thin film (20a) into a plurality of semiconductor thin film pieces (20) and form a plurality of assemblies of the semiconductor thin film pieces (20) and the individual support materials (19) fixed thereto, the semiconductor thin film pieces (20) are separated from the first substrate (11) while the individual support materials (19) remain fixed to the semiconductor thin film pieces (20), and they are then affixed to a second substrate (31). The invention facilitates handling of semiconductor thin film pieces.