Abstract: According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe provided to be accommodated in a recess formed at a portion of a substrate retainer on which the substrate is mounted.

Abstract: A display device includes a display panel that includes a first hole and a device housing that is configured such that the display panel is fastened and fixed to the device housing by a screw passed through the first hole and screwed into the screw hole. The display panel includes a display-side positioning part which is configured to fit to a portion of the device housing to perform positioning of the display panel with respect to the device housing and which includes the first hole, and the device housing includes a housing-side positioning part which is configured to fit to the display-side positioning part to perform the positioning and which includes a second hole formed so as to communicate with the first hole when the housing-side positioning part is fitted to the display-side positioning part.

Abstract: According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.

Abstract: There is provided a technique that includes: a reaction tube where a process chamber configured to process a substrate is formed; a heater structure including a heater heating the substrate; a cooler including a cooling valve supplying a cooling medium; an exhaust fan supplying the cooling medium to the cooler; and a cooling controller configured to: acquire a prediction model that includes information of the exhaust fan, final target temperature, and opening state of the cooling valve and estimates a predicted temperature predicting at least one selected from the group of a temperature of the heater and a temperature of the process chamber; acquire the at least one selected from the group of the temperature of the heater and the temperature of the process chamber, the opening state of the cooling valve, and the information of the exhaust fan; and regulate the opening state of the cooling valve.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.

Abstract: A field cooperation system according to an embodiment includes a terminal device and a management device. The terminal device includes: a position measurement unit; and a display unit. The position measurement unit measures a position of the terminal device. A display device displays a display image. The management device includes: a database; and a display control unit. The database stores three-dimensional data representing a layout of a structure. The display control unit generates a display image to illustrate the structure and an icon representing the position of the terminal device on the display unit in correspondence with each other based on the three-dimensional data and the measured position of the terminal device.

Abstract: There is provided a technique that includes a reaction container in which an object to be processed, containing a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the reaction container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the reaction container by selecting a wavelength of a radiation heat from the heater such that the radiant wave reaches the object to be processed in the reaction container.

Abstract: There is provided a technique that includes a quartz container in which an object to be processed, which contains a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the quartz container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the quartz container by heating from the heater such that the radiant wave reaches the object to be processed in the quartz container.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

Abstract: According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Abstract: There is provided a cooling unit, comprising: an intake pipe provided for each of a plurality of zones and configured to supply a gas for cooling a reaction tube; a control valve provided in the intake pipe and configured to adjust a flow rate of the gas; a buffer part configured to temporarily store the gas supplied from the intake pipe; and openings provided so as to blow the gas stored in the buffer part toward the reaction tube, wherein the flow rate of the gas introduced into the intake pipe is set according to vertical length ratios of the zones such that the flow rate and a flow velocity of the gas injected from the openings toward the reaction tube are adjusted by opening and closing the control valve.

Abstract: According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.

Abstract: A field cooperation system according to an embodiment includes a terminal device and a management device. The terminal device includes: a position measurement unit; and a display unit. The position measurement unit measures a position of the terminal device. A display device displays a display image. The management device includes: a database; and a display control unit. The database stores three-dimensional data representing a layout of a structure. The display control unit generates a display image to illustrate the structure and an icon representing the position of the terminal device on the display unit in correspondence with each other based on the three-dimensional data and the measured position of the terminal device.

Abstract: There is provided a technique that includes: a heat generator installed for each of control zones and configured to raise an internal temperature of a reaction tube by heat generation; a circuit configured to equalize resistance values in the respective control zones, wherein the circuit is a parallel circuit and is configured such that an output variable element is installed in one or more of output circuits constituting the parallel circuit.

Abstract: The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.