Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Abstract: Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

Abstract: An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such as a wiring included in the semiconductor device or display device in a desired shape with good controllability. One feature of a method for manufacturing a semiconductor device is to comprise the steps of forming a layer having a rough surface, forming a region having low wettability by a composition containing a conductive material and a region having high wettability by the composition over the rough surface, and forming a conductive material using the composition in the region having high wettability.

Abstract: The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a contact hole with an opening having a high aspect ratio can be favorably filled without using a conventional CMP process. It is another object of the present invention to provide a method for forming a wiring with fewer steps than a conventional method and to provide a method for manufacturing a highly integrated semiconductor device with a high yield. According to the present invention, a film having a water repellent surface is formed over a surface of an insulating film having plural air holes, a region having a hydrophilic surface is formed by irradiating with light a part of the film having the water repellent surface, and a conductive film is formed by discharging and baking a liquid material having a conductive particle over the region having the hydrophilic surface.

Abstract: The purpose of the present invention is to provide a semiconductor device or a display device that can be manufactured by improving the use efficiency of a material as well as simplifying the manufacturing process, and a manufacturing technique of those devices. Also, another purpose of the present invention is to provide a technique for forming a pattern of wirings, etc., constituting the semiconductor device or the display device, in a desired shape and with good adhesiveness. The adhesiveness between first and second conductive layers is increased by forming a conductive buffer layer including at least one pore between them. The second conductive layer is formed by filling the pores of the buffer layer including at least one pore with a particle shaped conductive material which is solidified by baking. The conductive layer solidified in the pores functions like a wedge, and the second conductive layer is formed over the first conductive layer with good adhesiveness and stability.

Abstract: It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost.

Abstract: The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

Abstract: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.