Patents by Inventor Masafumi Morisue
Masafumi Morisue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9419142Abstract: A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.Type: GrantFiled: March 27, 2012Date of Patent: August 16, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masafumi Morisue, Yasuhiro Jinbo, Gen Fujii, Hajime Kimura
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Patent number: 9356152Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: GrantFiled: January 27, 2014Date of Patent: May 31, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 9168749Abstract: This invention relates to a manufacturing method of a liquid discharge head comprising: forming an active energy ray-curable resin layer on a surface of a substrate on which discharge energy generating elements are formed, attaching a material permeable to active energy rays onto a surface of the active energy ray-curable resin layer, pressing against the material permeable to active energy rays, a master mold being transparent to the active energy rays and having protrusions corresponding to a pattern of discharge ports so as to transfer the protrusions to the material permeable to active energy rays, selectively irradiating the active energy ray-curable resin layer with active energy rays according to a pattern of liquid flow paths so as to cure the active energy ray-curable resin layer, removing the master mold, and removing uncured portions of the active energy ray-curable resin layer.Type: GrantFiled: December 2, 2009Date of Patent: October 27, 2015Assignee: Canon Kabushiki KaishaInventors: Yoshikazu Saito, Hiroe Ishikura, Takumi Suzuki, Tamaki Sato, Hirono Yoneyama, Masafumi Morisue, Ryoji Kanri
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Publication number: 20150293404Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: ApplicationFiled: June 25, 2015Publication date: October 15, 2015Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI
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Patent number: 9114617Abstract: A method of manufacturing a liquid discharge head having a flow path communicating with a discharge port for discharging liquid includes in the following order: preparing a substrate with an evenly provided first layer as a flat layer; forming, of the first layer, a pattern of the flow path for forming the flow path, and a member (A) provided outside the pattern via a gap; providing a second layer so as to fill the gap and to cover the pattern and the member (A); forming, of the second layer, a member (B) for forming the discharge port on the pattern; and removing the member (A), providing, at least on the substrate, a third layer so as to hold it in intimate contact with the member (B), and removing the pattern to form the flow path.Type: GrantFiled: March 28, 2011Date of Patent: August 25, 2015Assignee: Canon Kabushiki KaishaInventors: Tamaki Sato, Masafumi Morisue, Hirono Yoneyama
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Patent number: 9082679Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: GrantFiled: August 4, 2014Date of Patent: July 14, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuhiro Jinbo, Masafumi Morisue, Hajime Kimura, Shunpei Yamazaki
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Patent number: 8937013Abstract: A method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer, is proposed. The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light. Note that for the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10?2 ? cm can be used.Type: GrantFiled: October 12, 2007Date of Patent: January 20, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Masafumi Morisue
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Publication number: 20140339578Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: ApplicationFiled: August 4, 2014Publication date: November 20, 2014Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI
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Patent number: 8823023Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: GrantFiled: July 6, 2012Date of Patent: September 2, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuhiro Jinbo, Masafumi Morisue, Hajime Kimura, Shunpei Yamazaki
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Publication number: 20140231542Abstract: A manufacturing method of a liquid ejection head, which includes a step of preparing a substrate including a first layer, a step of forming a flow path mold for forming the flow path and a member located outside the mold with a gap between the mold and the member from the first layer, a step of providing a second layer so that the second layer fills the gap and covers the mold and the member located outside the mold with the gap between them, a step of forming an ejection orifice forming member for forming an ejection orifice from the second layer, a step of removing the member located outside the mold with the gap between them, and a step of forming a wall member located outside the ejection orifice forming member with at least a partial gap between the ejection orifice forming member and the wall member.Type: ApplicationFiled: September 12, 2012Publication date: August 21, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Tamaki Sato, Masafumi Morisue, Tetsushi Ishikawa, Hirono Yoneyama
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Publication number: 20140138680Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: ApplicationFiled: January 27, 2014Publication date: May 22, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 8648346Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: GrantFiled: September 23, 2011Date of Patent: February 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 8624252Abstract: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.Type: GrantFiled: September 12, 2012Date of Patent: January 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shinji Maekawa, Gen Fujii, Hiroko Shiroguchi, Masafumi Morisue
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Patent number: 8487436Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.Type: GrantFiled: May 12, 2009Date of Patent: July 16, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
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Patent number: 8419168Abstract: Provided is a liquid ejection head including a substrate including a liquid supply port and an energy generating element, in which the liquid supply port has at least one groove shape formed in a wall surface thereof, the at least one groove shape extending from a rear surface, which is a surface opposite to a front surface on which the energy generating element is formed, toward the front surface.Type: GrantFiled: August 26, 2011Date of Patent: April 16, 2013Assignee: Canon Kabushiki KaishaInventors: Akihiko Okano, Masahiko Kubota, Ryoji Kanri, Yoshiyuki Fukumoto, Masafumi Morisue
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Patent number: 8366951Abstract: A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from a first surface to a rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a <100> direction of the Si substrate; and forming a plurality of the liquid supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.Type: GrantFiled: December 2, 2009Date of Patent: February 5, 2013Assignee: Canon Kabushiki KaishaInventors: Masafumi Morisue, Takumi Suzuki, Masahiko Kubota, Ryoji Kanri, Akihiko Okano, Atsushi Hiramoto
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Publication number: 20130001560Abstract: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shinji MAEKAWA, Gen FUJII, Hiroko SHIROGUCHI, Masafumi MORISUE
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Publication number: 20130004668Abstract: A method of manufacturing a liquid discharge head having a flow path communicating with a discharge port for discharging liquid includes in the following order: preparing a substrate with an evenly provided first layer as a flat layer; forming, of the first layer, a pattern of the flow path for forming the flow path, and a member (A) provided outside the pattern via a gap; providing a second layer so as to fill the gap and to cover the pattern and the member (A); forming, of the second layer, a member (B) for forming the discharge port on the pattern; and removing the member (A), providing, at least on the substrate, a third layer so as to hold it in intimate contact with the member (B), and removing the pattern to form the flow path.Type: ApplicationFiled: March 28, 2011Publication date: January 3, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Tamaki Sato, Masafumi Morisue, Hirono Yoneyama
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Patent number: 8324018Abstract: Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.Type: GrantFiled: December 18, 2009Date of Patent: December 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiyuki Isa, Gen Fujii, Masafumi Morisue, Ikuko Kawamata
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Publication number: 20120274879Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.Type: ApplicationFiled: July 6, 2012Publication date: November 1, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI