Patents by Inventor Masafumi Morisue

Masafumi Morisue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9419142
    Abstract: A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
    Type: Grant
    Filed: March 27, 2012
    Date of Patent: August 16, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masafumi Morisue, Yasuhiro Jinbo, Gen Fujii, Hajime Kimura
  • Patent number: 9356152
    Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: May 31, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
  • Patent number: 9168749
    Abstract: This invention relates to a manufacturing method of a liquid discharge head comprising: forming an active energy ray-curable resin layer on a surface of a substrate on which discharge energy generating elements are formed, attaching a material permeable to active energy rays onto a surface of the active energy ray-curable resin layer, pressing against the material permeable to active energy rays, a master mold being transparent to the active energy rays and having protrusions corresponding to a pattern of discharge ports so as to transfer the protrusions to the material permeable to active energy rays, selectively irradiating the active energy ray-curable resin layer with active energy rays according to a pattern of liquid flow paths so as to cure the active energy ray-curable resin layer, removing the master mold, and removing uncured portions of the active energy ray-curable resin layer.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: October 27, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoshikazu Saito, Hiroe Ishikura, Takumi Suzuki, Tamaki Sato, Hirono Yoneyama, Masafumi Morisue, Ryoji Kanri
  • Publication number: 20150293404
    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
    Type: Application
    Filed: June 25, 2015
    Publication date: October 15, 2015
    Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI
  • Patent number: 9114617
    Abstract: A method of manufacturing a liquid discharge head having a flow path communicating with a discharge port for discharging liquid includes in the following order: preparing a substrate with an evenly provided first layer as a flat layer; forming, of the first layer, a pattern of the flow path for forming the flow path, and a member (A) provided outside the pattern via a gap; providing a second layer so as to fill the gap and to cover the pattern and the member (A); forming, of the second layer, a member (B) for forming the discharge port on the pattern; and removing the member (A), providing, at least on the substrate, a third layer so as to hold it in intimate contact with the member (B), and removing the pattern to form the flow path.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: August 25, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tamaki Sato, Masafumi Morisue, Hirono Yoneyama
  • Patent number: 9082679
    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: July 14, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiro Jinbo, Masafumi Morisue, Hajime Kimura, Shunpei Yamazaki
  • Patent number: 8937013
    Abstract: A method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer, is proposed. The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light. Note that for the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10?2 ? cm can be used.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: January 20, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Masafumi Morisue
  • Publication number: 20140339578
    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
    Type: Application
    Filed: August 4, 2014
    Publication date: November 20, 2014
    Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI
  • Patent number: 8823023
    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: September 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiro Jinbo, Masafumi Morisue, Hajime Kimura, Shunpei Yamazaki
  • Publication number: 20140231542
    Abstract: A manufacturing method of a liquid ejection head, which includes a step of preparing a substrate including a first layer, a step of forming a flow path mold for forming the flow path and a member located outside the mold with a gap between the mold and the member from the first layer, a step of providing a second layer so that the second layer fills the gap and covers the mold and the member located outside the mold with the gap between them, a step of forming an ejection orifice forming member for forming an ejection orifice from the second layer, a step of removing the member located outside the mold with the gap between them, and a step of forming a wall member located outside the ejection orifice forming member with at least a partial gap between the ejection orifice forming member and the wall member.
    Type: Application
    Filed: September 12, 2012
    Publication date: August 21, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tamaki Sato, Masafumi Morisue, Tetsushi Ishikawa, Hirono Yoneyama
  • Publication number: 20140138680
    Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
    Type: Application
    Filed: January 27, 2014
    Publication date: May 22, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
  • Patent number: 8648346
    Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: February 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
  • Patent number: 8624252
    Abstract: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: January 7, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinji Maekawa, Gen Fujii, Hiroko Shiroguchi, Masafumi Morisue
  • Patent number: 8487436
    Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: July 16, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Masafumi Morisue, Ikuko Kawamata
  • Patent number: 8419168
    Abstract: Provided is a liquid ejection head including a substrate including a liquid supply port and an energy generating element, in which the liquid supply port has at least one groove shape formed in a wall surface thereof, the at least one groove shape extending from a rear surface, which is a surface opposite to a front surface on which the energy generating element is formed, toward the front surface.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: April 16, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akihiko Okano, Masahiko Kubota, Ryoji Kanri, Yoshiyuki Fukumoto, Masafumi Morisue
  • Patent number: 8366951
    Abstract: A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from a first surface to a rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a <100> direction of the Si substrate; and forming a plurality of the liquid supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: February 5, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masafumi Morisue, Takumi Suzuki, Masahiko Kubota, Ryoji Kanri, Akihiko Okano, Atsushi Hiramoto
  • Publication number: 20130001560
    Abstract: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 3, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shinji MAEKAWA, Gen FUJII, Hiroko SHIROGUCHI, Masafumi MORISUE
  • Publication number: 20130004668
    Abstract: A method of manufacturing a liquid discharge head having a flow path communicating with a discharge port for discharging liquid includes in the following order: preparing a substrate with an evenly provided first layer as a flat layer; forming, of the first layer, a pattern of the flow path for forming the flow path, and a member (A) provided outside the pattern via a gap; providing a second layer so as to fill the gap and to cover the pattern and the member (A); forming, of the second layer, a member (B) for forming the discharge port on the pattern; and removing the member (A), providing, at least on the substrate, a third layer so as to hold it in intimate contact with the member (B), and removing the pattern to form the flow path.
    Type: Application
    Filed: March 28, 2011
    Publication date: January 3, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tamaki Sato, Masafumi Morisue, Hirono Yoneyama
  • Patent number: 8324018
    Abstract: Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: December 4, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Gen Fujii, Masafumi Morisue, Ikuko Kawamata
  • Publication number: 20120274879
    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
    Type: Application
    Filed: July 6, 2012
    Publication date: November 1, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuhiro JINBO, Masafumi MORISUE, Hajime KIMURA, Shunpei YAMAZAKI