Abstract: A wireless relay device that transmits a reception signal from a transmission device to a reception device includes a determination section configured to determine whether or not the reception signal is a retransmission signal retransmitted from the transmission device, and an amplification section configured to amplify the reception signal when the determination section determines that the reception signal is the retransmission signal, and not to amplify the reception signal when the determination section determines that the reception signal is not the retransmission signal.

Abstract: A link establishing method to be implemented in a radio communication system sends a notifying signal notifying a plurality of radio resources from a base station when the base station judges that a collision of requests from a plurality of mobile stations has occurred, depending on a call request signal or a first connection request signal, and sends a second connection request signal from the mobile station using one radio resource selected from the plurality of radio resources notified by the notifying signal.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A wireless relay apparatus relaying wireless communication between a transmission station and a receiving station includes M (M is an integer >1) receiving antennas receiving a radio signal from the transmission station, a signal processing section performing orthogonal transformation and phase rotation on M received signals received by each of the receiving antennas as an input signal so as to obtain M output signals having a same average power level, and M transmission antennas individually transmitting the M output signals obtained by the signal processing section to the receiving station.

Abstract: A semiconductor device includes: a first active region surrounded with an isolation region of a semiconductor substrate; a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region; a first side-wall insulating film; an auxiliary pattern formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film; and a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film. In this device, the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of: the sum of the thicknesses of the first and second side-wall insulating films; and the double of the thickness of the stress-containing insulating film.

Abstract: A relay station that relays radio signals between a base transceiver station and a mobile station includes a downlink amplifier that amplifies a downlink signal from the base transceiver station to the mobile station, an uplink amplifier that amplifies an uplink signal from the mobile station to the base transceiver station, a paging response signal detection unit that detects a paging response signal with which the mobile station responds to a paging signal for paging the mobile station, and an amplification control unit that starts amplification control with respect to the downlink amplifier and the uplink amplifier when the paging response signal has been detected by the paging response signal detection unit.

Abstract: A mobile station that receives multibeam data in precoding Multiple Input Multiple Output (MIMO) from a base station, using a plurality of antennas, includes: a code book that includes contents identical to contents of a code book installed in the base station and that includes information of beam selection for precoding; and a control unit that determines a weight for carrying out optimum beam selection for precoding at time of searching information in the code book, based on a state of a beam in each resource block of received data that is divided into a plurality of resource blocks in a radio communication band, to transmit the weight as feedback information to the base station.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A wireless communication apparatus of a base station uses antennas for multiple systems, forms a multi-beam, transmits data to a mobile station, and includes a code book configured to store therein beamforming information; a pre-coder that reads the code book and executes a process of forming a given beam for the data; a control unit that, based on feedback information to correct variations in phase occurring at transmitting circuits respectively corresponding to each of the systems, performs control such that the beamforming information to correct the variations in phase is read from the code book; and a phase correcting unit that corrects a phase of the multi-beam formed by the pre-coder, based on the feedback information and such that relations among the phases of the multi-beam become substantially linear.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A wireless communication system includes a transmitting apparatus, and a plurality of receiving apparatuses. A first receiving apparatus among the plurality of receiving apparatuses includes, a first receiver that receives wireless signals transmitted from a plurality of antennas of the transmitting apparatus, a first processor that selects, from among a plurality of transmission weights, a transmission weight that allows a quality of a wireless signal to satisfy specified criteria, and a first transmitter that transmits weight information concerning the selected transmission weight to the transmitting apparatus. The transmitting apparatus including a second receiver that receives the weight information from the first receiving apparatus, and a second processor that corrects for a phase difference among the plurality of antennas based on the weight information, the weight information relating to positional information concerning a position of the first receiving apparatus.

Abstract: In a communication system in which communication is performed by switching between first multi-antenna transmission control which performs multi-stream transmission and second multi-antenna transmission control which performs single-stream transmission, the distance between a base station and a mobile terminal is calculated, and if the distance to the terminal is smaller than a preset distance, multiple-input multiple-output (MIMO) transmission control is performed as the first multi-antenna transmission control, but if the distance to the terminal is greater than the preset distance, adaptive array antenna (AAA) control is performed as the second multi-antenna transmission control.

Abstract: A wireless communication apparatus on the base station transmits beamformed multi-beam data to a wireless communication apparatus on the mobile station side using a multiple antennas. To obtain an expected directivity without gain reduction under the existence of phase variation in transmission circuits, the wireless communication apparatus on the base station is equipped with a code book that stores beamforming information, a precoder that reads the code book and performs processing to form a multi-beam pattern for the data, and a control unit that controls, based on feedback information, the reading of beamforming information from the code book for the compensation of phase variation.

Abstract: A radio communication system including a first communication device configured to transmit a signal, a relay device which includes a receiver configured to receive the transmitted signal, an amplifier configured to amplify the received signal according to a gain determined by a processor included in a control device, and a transmitter configured to transmit the amplified signal to a second communication device, the second communication device being configured to receive the amplified signal, and the transmitted signal, which is transmitted directly from the first communication device, and the control device being configured to improve a reception quality of the amplified signal and the directly transmitted signal.

Abstract: A link establishing method to be implemented in a radio communication system sends a notifying signal notifying a plurality of radio resources from a base station when the base station judges that a collision of requests from a plurality of mobile stations has occurred, depending on a call request signal or a first connection request signal, and sends a second connection request signal from the mobile station using one radio resource selected from the plurality of radio resources notified by the notifying signal.

Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: A wireless relay apparatus relaying wireless communication between a transmission station and a receiving station includes M (M is an integer >1) receiving antennas receiving a radio signal from the transmission station, a signal processing section performing orthogonal transformation and phase rotation on M received signals received by each of the receiving antennas as an input signal so as to obtain M output signals having a same average power level, and M transmission antennas individually transmitting the M output signals obtained by the signal processing section to the receiving station.

Abstract: In a first interlevel insulating film, a first region which is made of the first interlevel insulating film and in which first wiring films are not provided is formed to be located above a first light receiving part of the plurality of light receiving parts, and a second region which is made of the first interlevel insulating film and in which the first wiring films are not provided is formed to be located above a second light receiving part of the plurality of light receiving parts which is adjacent to the first light receiving part. A space between ones of the first wiring films with the first region interposed therebetween is larger than a space between ones of the first wiring films with the second region interposed therebetween.

Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.