Abstract: A receiver in a wireless communication system including a transmitter that multiplies a plurality of transmission signals with a plurality of beam weights to transmit the transmission signal through a plurality of antennas. Also included is a receiver that receives the transmission signals, detects a specific beam weight of which reception state is a specific state among a plurality of to-be-detected beam weights, and notifies the transmitter of the detection of the specific beam weight. The receiver preferably includes a monitoring unit that monitors a state of variation in the beam weight by performing a statistics process on history of previously-detected beam weights. Also included is a control unit that controls the number of the-to-be-detected beam weights or a detection timing of the specific beam weight according to a monitoring result.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes an active region formed on a semiconductor substrate, an element isolation region formed on the semiconductor substrate so as to surround the active region, and a gate electrode formed on the active region. A region that causes tensile stress so as to improve carrier mobility in the active region is provided in the element isolation region.

Abstract: A fuse element has a first region, a second region and a third region. The first region is a portion for isolating circuitry. The second region and the third region are respectively connected to both ends of the first region and have a wider pattern width than that of the first region. The second region, the first region and a part of the third region of the fuse element are formed on a thick insulating film, while the remaining part of the third region is formed on a thin insulating film. Heat generated in the fuse element is less likely to be released to a semiconductor substrate through the thick insulating film, but is more likely to be released to the semiconductor substrate through the thin insulating film. The fuse element therefore has a large temperature change and a large temperature gradient. This facilitates electrical blowing of the first region.

Abstract: In a communication system in which communication is performed by switching between first multi-antenna transmission control which performs multi-stream transmission and second multi-antenna transmission control which performs single-stream transmission, the distance between a base station and a mobile terminal is calculated, and if the distance to the terminal is smaller than a preset distance, multiple-input multiple-output (MIMO) transmission control is performed as the first multi-antenna transmission control, but if the distance to the terminal is greater than the preset distance, adaptive array antenna (AAA) control is performed as the second multi-antenna transmission control.

Abstract: A wireless communication apparatus on the base station transmits beamformed multi-beam data to a wireless communication apparatus on the mobile station side using a multiple antennas. To obtain an expected directivity without gain reduction under the existence of phase variation in transmission circuits, the wireless communication apparatus on the base station is equipped with a code book that stores beamforming information, a precoder that reads the code book and performs processing to form a multi-beam pattern for the data, and a control unit that controls, based on feedback information, the reading of beamforming information from the code book for the compensation of phase variation.

Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: Pixel portions each of which has a charge storage portion formed in a semiconductor substrate 11 and a transfer gate for transferring charges stored in the charge storage portion are isolated from each other by a device isolation region in the semiconductor substrate. A buried gate electrically connected to the transfer gate is embedded in the device isolation region. The buried gate includes a gate dielectric film and gate electrode formed in a trench of the semiconductor substrate.

Abstract: A semiconductor device includes: a first active region surrounded with an isolation region of a semiconductor substrate; a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region; a first side-wall insulating film; an auxiliary pattern formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film; and a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film. In this device, the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of: the sum of the thicknesses of the first and second side-wall insulating films; and the double of the thickness of the stress-containing insulating film.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the NMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulting film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.

Abstract: In a searcher of a CDMA receiver comprising an array antenna, a voltage profile generation portion performs correlation computations of received signals for each antenna element and generates received signal voltage profiles; a phase difference estimation portion uses sample data from each voltage profile at the same time to perform correlation calculations among antenna elements and estimates the phase difference among antenna elements at the above time, and similarly estimates the phase differences among antenna elements at each time. An in-phase synthesis portion uses the phase difference estimate at a prescribed time to coordinate the phases of voltage profiles for each antenna element at the above time and performs synthesis, and similarly coordinates the phases of each antenna element voltage profile at other times and performs synthesis; and, a path detection portion detects the path timing of multiple paths based on the synthesized profile obtained by the in-phase synthesis portion.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A radio transmitter includes an orthogonal transformation unit for carrying out an orthogonal transformation on pilot signals having orthogonal relation to each other between transmission antennas and a pilot multiplexing unit multiplexing the pilot signals and transmission data, and a radio receiver includes a channel estimation unit obtaining a channel estimate of a directive multibeam for each of reception antennas, an inverse transformation unit carrying out an inverse transformation of the orthogonal transformation on the obtained channel estimate and a received signal processing unit selectively conducting first processing based on the beam channel estimate in the first mode or second processing based on the channel estimate obtained by the inverse transformation unit in the second mode. This commonizes a common pilot for MIMO (second mode) and individual pilots for AAA (first mode), thus realizing the coexistence of MIMO and AAA without leading to a reduction of throughput.

Abstract: Disclosed is a wireless communication apparatus having an array antenna constituted by a plurality of antennas, radio receiving circuits, which are provided for respective ones of the antennas, for amplifying respective ones of antenna receive signals and applying a frequency conversion to the baseband signals, and a demodulator for demodulating receive data from the baseband signals. A narrow-band-signal extracting unit extracts two narrow-band signals, which have the maximum frequency spacing between them, from the baseband signals of each of the antennas, an estimating unit estimates phase variation in each radio receiving circuit using the two narrow-band signals of each antenna, and a phase-variation correcting unit corrects for phase variation in each radio receiving circuit.

Abstract: The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

Abstract: A fuse element has a first region, a second region and a third region. The first region is a portion for isolating circuitry. The second region and the third region are respectively connected to both ends of the first region and have a wider pattern width than that of the first region. The second region, the first region and a part of the third region of the fuse element are formed on a thick insulating film, while the remaining part of the third region is formed on a thin insulating film. Heat generated in the fuse element is less likely to be released to a semiconductor substrate through the thick insulating film, but is more likely to be released to the semiconductor substrate through the thin insulating film. The fuse element therefore has a large temperature change and a large temperature gradient. This facilitates electrical blowing of the first region.

Abstract: Correlation with a spreading code is done for each of the signals received by a plurality of antennas forming an array antenna (10); then, beam forming (18) is performed using the result of the correlation, and a delay profile is generated (20, 22, 26) from the result of the beam forming, thereby achieving accurate path detection (26). DOA information obtained for the beam forming (18) can also be used as an initial value to be given to a beam former (33) in a received signal processor (14).

Abstract: The present invention is directed to an interference canceller for a DS-CDMA communication system and a radio communication device that performs multi-rate transmission and eliminates interference of high-rate channels by a simplified structure. In a DS-CDMA communication system that performs a multi-rate transmission including at least low-rate channels and high-rate channels, there is provided an interference canceller that includes an array antenna interference replicating unit. The interference replicating unit is used in high-rate channels that receive signals received via array antenna elements and creates interference replicas of the high-rate channels. The system also includes an adder 6, which subtracts the interference replicas from the received signal via the array antenna elements. Further a resultant interference-eliminated signal is applied to receivers for the low-rate and high-rate channels.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.