Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

Abstract: A wireless relay device that transmits a reception signal from a transmission device to a reception device includes a determination section configured to determine whether or not the reception signal is a retransmission signal retransmitted from the transmission device, and an amplification section configured to amplify the reception signal when the determination section determines that the reception signal is the retransmission signal, and not to amplify the reception signal when the determination section determines that the reception signal is not the retransmission signal.

Abstract: The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

Abstract: A relay station that relays radio signals between a base transceiver station and a mobile station includes a downlink amplifier that amplifies a downlink signal from the base transceiver station to the mobile station, an uplink amplifier that amplifies an uplink signal from the mobile station to the base transceiver station, a paging response signal detection unit that detects a paging response signal with which the mobile station responds to a paging signal for paging the mobile station, and an amplification control unit that starts amplification control with respect to the downlink amplifier and the uplink amplifier when the paging response signal has been detected by the paging response signal detection unit.

Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

Abstract: Relaying a radio signal in a radio relay station apparatus that relays the radio signal between a base station apparatus and a mobile station apparatus, including storing an identifier of the mobile station apparatus, specifying a radio resource assigned to the mobile station apparatus, which is a radio resource in which a radio signal that should be amplified is transmitted, the radio resource assigned to the mobile station apparatus being indicated by control channel information sent from the base station apparatus, and receiving the radio signal between the base station apparatus and the mobile station apparatus. Further including amplifying the received signal, the received signal being transmitted on the specified radio resource, and sending the amplified signal in a form of the radio signal.

Abstract: Pixel portions each of which has a charge storage portion formed in a semiconductor substrate 11 and a transfer gate for transferring charges stored in the charge storage portion are isolated from each other by a device isolation region in the semiconductor substrate. A buried gate electrically connected to the transfer gate is embedded in the device isolation region. The buried gate includes a gate dielectric film and gate electrode formed in a trench of the semiconductor substrate.

Abstract: A radio transmitter includes an orthogonal transformation unit for carrying out an orthogonal transformation on pilot signals having orthogonal relation to each other between transmission antennas and a pilot multiplexing unit multiplexing the pilot signals and transmission data, and a radio receiver includes a channel estimation unit obtaining a channel estimate of a directive multibeam for each of reception antennas, an inverse transformation unit carrying out an inverse transformation of the orthogonal transformation on the obtained channel estimate and a received signal processing unit selectively conducting first processing based on the beam channel estimate in the first mode or second processing based on the channel estimate obtained by the inverse transformation unit in the second mode. This commonizes a common pilot for MIMO (second mode) and individual pilots for AAA (first mode), thus realizing the coexistence of MIMO and AAA without leading to a reduction of throughput.

Abstract: A wireless communication apparatus of a base station uses antennas for multiple systems, forms a multi-beam, transmits data to a mobile station, and includes a code book configured to store therein beamforming information; a pre-coder that reads the code book and executes a process of forming a given beam for the data; a control unit that, based on feedback information to correct variations in phase occurring at transmitting circuits respectively corresponding to each of the systems, performs control such that the beamforming information to correct the variations in phase is read from the code book; and a phase correcting unit that corrects a phase of the multi-beam formed by the pre-coder, based on the feedback information and such that relations among the phases of the multi-beam become substantially linear.

Abstract: A semiconductor device includes an active region formed on a semiconductor substrate, an element isolation region formed on the semiconductor substrate so as to surround the active region, and a gate electrode formed on the active region. A region that causes tensile stress so as to improve carrier mobility in the active region is provided in the element isolation region.

Abstract: In a semiconductor device, a gate insulating film is formed on a semiconductor substrate, and a gate electrode is formed on the gate insulating film. Thick regions of the gate insulating film which are located under both ends of the gate electrode, respectively, have a larger thickness than that of a middle region of the gate insulating film which is located under a middle region of the gate electrode.

Abstract: The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

Abstract: A mobile station that receives multibeam data in preceding Multiple Input Multiple Output (MIMO) from a base station, using a plurality of antennas, includes: a code book that includes contents identical to contents of a code book installed in the base station and that includes information of beam selection for preceding; and a control unit that determines a weight for carrying out optimum beam selection for preceding at time of searching information in the code book, based on a state of a beam in each resource block of received data that is divided into a plurality of resource blocks in a radio communication band, to transmit the weight as feedback information to the base station.

Abstract: In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulating film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.

Abstract: A radio communication system including a radio base station and radio terminals communicating with the radio base station, wherein the system further includes a unit for allocating a first frequency resource which is shared by the radio terminals and which is used when each of the radio terminals transmits a first signal to the radio base station in periodic transmission timing. Also included is a unit for allocating a second frequency resource which is used when each of the radio terminals transmits a second signal to the radio base station. Also included is a unit for controlling the second frequency resource when each of the radio terminals transmits the second signal in transmission timing of the first signal, so that the second frequency resource is changed to a third frequency resource which is smaller than the allocated second frequency resource so as not to overlap the first frequency resource.

Abstract: Correlation with a spreading code is done for each of the signals received by a plurality of antennas forming an array antenna (10); then, beam forming (18) is performed using the result of the correlation, and a delay profile is generated (20, 22, 26) from the result of the beam forming, thereby achieving accurate path detection (26). DOA information obtained for the beam forming (18) can also be used as an initial value to be given to a beam former (33) in a received signal processor (14).

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A wireless transmitter controls the number of transmission beams to be formed for transmitting a data stream depending on the number of data streams to be transmitted, and a wireless receiver selectively receives any one or more of the transmission beam from the transmission beams. In this manner, by changing the number of transmission beams (the original number of beams selectable on the receiving side) to be formed depending on the number of transmitting data streams, high throughput characteristics by a low interbeam correlation at the time of the multistream transmission and a large directional gain at the time of a single stream may be achieved.