Abstract: A dielectric ceramic composition is disclosed which includes: a main ceramic composition of barium oxide and titanium oxide, or barium oxide, titanium oxide and at least one of strontium oxide, calcium oxide, zirconia and zinc oxide, which composition is represented by (1-a-b)BaO.multidot.aSrO.multidot.bCaO.multidot.x[(1-c)TiO.sub.2 .multidot.cZrO.sub.2 ].multidot.yZnO, where 3.1.ltoreq.x .ltoreq.5.4, 0.ltoreq.y.ltoreq.2.9, 0.ltoreq.a+b.ltoreq.0.4, 0.ltoreq.c.ltoreq.0.2; and a secondary component at least a part of which consists of a B.sub.2 O.sub.3 material or a glass material containing B.sub.2 O.sub.3 as one of glass components, the secondary component being added to the main ceramic composition, in an amount of 0.1-7.5 parts by weight of B.sub.2 O.sub.3 per 100 parts by weight of the main ceramic composition.

Abstract: A reaction gas or a gas containing a reaction gas is blown through blowing nozzles onto a steel material in a chemical vapor deposition treating chamber at a velocity sufficient to forcibly remove reacted products from reacted surfaces of a steel material while suppressing irregular thickness of a deposited film.

Abstract: A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.yTiO.sub.2.z[(1-a)RE.sub.2 O.sub.3.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10 .ltoreq.z.ltoreq.0.25, x+y+z=1 and 0<a .ltoreq.0.3; and a glass composition composed of ZnO, B.sub.2 O.sub.3 and SiO.sub.2, which is represented by k(wt. %)ZnO.m(wt. %)B.sub.2 O.sub.3 .n(wt. %)SiO2 where 30 .ltoreq.k.ltoreq.85, 5.ltoreq.m.ltoreq.50, 2.ltoreq.n.ltoreq.40, k+m+n=100. The glass composition is contained in an amount of at least 0.1 part by weight, but not more than (18-62.5a) parts by weight (where 0<a.ltoreq.0.2) or not more than 5.5 parts by weight (where 0.2<a.ltoreq.0.3), per 100 parts by weight of the main ceramic composition.

Abstract: A dielectric ceramic composition is disclosed which includes: a main ceramic composition of barium oxide and titanium oxide, or barium oxide, titanium oxide and at least one of strontium oxide, calcium oxide, zirconia and zinc oxide, which composition is represented by (1-a-b)BaO.aSrO.bCaO.x[(1-c)TiO.sub.2.cZrO.sub.2 ].yZnO, where 3.1.ltoreq.x.ltoreq.5.4, 0.ltoreq.y.ltoreq.2.9, 0.ltoreq.a+b.ltoreq.0.4, 0.ltoreq.c.ltoreq.0.2; and a secondary component at least a part of which consists of a B.sub.2 O.sub.3 material or a glass material containing B.sub.2 O.sub.3 as one of glass components, the secondary component being added to the main ceramic composition, in an amount of 0.1-7.5 parts by weight of B.sub.2 O.sub.3 per 100 parts by weight of the main ceramic composition.

Abstract: An automatic pattern recognition method has a short processing time, can be applied to nonlinear separation problems, and can perform similarity calculations. The method: Divides a plurality of sample data of known categories into a plurality of classes; When the sample data in a divided class is not all in the same category, repeats dividing the sample data into subclasses until sample data in a subclass has only one category; Expresses the relationship between classes and subclasses in a tree-structure representation and determines the standard pattern for each class and subclass from the sample data contained there; and Checks which of the tree-structured classes input data of unknown category is nearest, by calculating the distance to the standard pattern of each class, and then, when the class has subclasses, performs a similar check until the lowest-level subclass is reached to determine the subclass the input data is closest to.

Abstract: A learning control method reduces overall learning time by displaying data related to an appropriate determination of learning protraction and a proper restoring method. Prior to initiating the learning, the user is inquired about the current problem and a problem data set representing items associated with the problem is obtained. Evaluation data indicating a state of learning obtained during the learning on the current problem is sequentially stored and displayed. When there is a high possibility of learning protraction during the learning, a message informing the user is displayed. When the learning is stopped by the user in this case, the problem data set and evaluation data set are stored. Then, a list of restoring methods is displayed and a particular restoring method is selected by the user once the learning is stopped. The learning is restarted on the current problem in accordance with the selected restoring method.

Abstract: A document processing system for processing documents by using structured keywords comprises an output system and a receiver system. The output system includes a first storage for storing a structured keyword dictionary containing structured keywords among which relations are systematically structured, and linkage unit providing linkage information for establishing correspondences between constituent parts of an input document and corresponding ones of the keywords. The receiver system is coupled to the output system and includes a second storage for storing structured keywords among which relations are systematically structured, and retrieving unit having inputs supplied with the document and the linkage information for retrieving the document to thereby form data of a predetermined edition format by using the structured keyword read out from the second storage. Data transfer between the output system and the receiver systems can be performed either on-line or off-line.

Abstract: A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.yTiO.sub.2.z[(1-a)RE.sub.2 O.sub.3.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.25, x+y+z=1 and 0<a.ltoreq.0.3; and a glass composition composed of ZnO, B.sub.2 O.sub.3 and SiO.sub.2, which is represented by k(wt. %)ZnO.m(wt. %)B.sub.2 O.sub.3 .n(wt. %)SiO2 where 30.ltoreq.k.ltoreq.85, 5.ltoreq.m.ltoreq.50, 2.ltoreq.n.ltoreq.40, k+m+n=100. The glass composition is contained in an amount of at least 0.1 part by weight, but not more than (18-62.5a) parts by weight (where 0<a.ltoreq.0.2) or not more than 5.5 parts by weight (where 0.2<a.ltoreq.0.3), per 100 parts by weight of the main ceramic composition.

Abstract: A method of producing a dielectric ceramic composition is disclosed which includes the steps of: preparing a main ceramic composition comprising BaO, TiO, and RE.sub.2 O.sub.3 (where RE represents at least one rare earth metal) as major components; calcining a mixture of starting materials which give the main ceramic composition, at a temperature of 1050.degree. C. or higher, to provide a calcined mixture; finely pulverizing the calcined mixture to provide a calcined ceramic powder having an average grain size of not larger than 0.8 .mu.m; and adding, as at least a part of a secondary component, a B.sub.2 O.sub.3 powder or a glass powder containing B.sub.2 O.sub.3, to the main ceramic composition. Also disclosed are a dielectric resonator and dielectric filter using such a dielectric ceramic composition as produced according to the above method, and a method of producing such a dielectric resonator or filter.

Abstract: A low noise type reduction gear which assures that sound generated by collision of particles of a lubricant with a wall surface of a casing and sound attributable to resonance of the casing can substantially be attenuated by arranging laminated vibration damping steel sheets inside of the casing.

Abstract: A dielectric ceramic composition is disclosed which includes: a main ceramic composition of barium oxide and titanium oxide, or barium oxide, titanium oxide and at least one of strontium oxide, calcium oxide, zirconia and zinc oxide, which composition is represented by (1-a-b)BaO.aSrO.bCaO.x[(1-c)TiO.sub.2.cZrO.sub.2 ].yZnO, where 3.1.ltoreq.x.ltoreq.5.4, 0.ltoreq.y.ltoreq.2.9, 0.ltoreq.a+b.ltoreq.0.4, 0.ltoreq.c.ltoreq.0.2; and a secondary component at least a part of which consists of a B.sub.2 O.sub.3 material or a glass material containing as one of glass components, the secondary component being added to the main ceramic composition, in an amount of 0.1-7.5 parts by weight of B.sub.2 O.sub.3 per 100 parts by weight of the main ceramic composition.

Abstract: A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.

Abstract: A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.multidot.yTiO.sub.2 .multidot.Z[(1-a)RE.sub.2 O.sub.3 .multidot.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10 .ltoreq.z.ltoreq.0.25, x+y+z=1 and 0<a.ltoreq.0.3; and a glass composition composed of ZnO, B.sub.2 O.sub.3 and SiO.sub.2, which is represented by k(wt.%)ZnO.multidot.m(wt.%)B.sub.2 O.sub.3 .multidot.n(wt.%)SiO.sub.2 where 30 .ltoreq.k.ltoreq.85, 5.ltoreq.m.ltoreq.50, 2.ltoreq.n.ltoreq.40, k+m+n=100. The glass composition is contained in an amount of at least 0.1 part by weight, but not more than (18-62.5a) parts by weight (where 0<a.ltoreq.0.2) or not more than 5.5 parts by weight (where 0.2<a.ltoreq.0.3), per 100 parts by weight of the main ceramic composition.

Abstract: For dry-etching a material such as an aluminum alloy layer, a helium gas is added to an etching gas to detect an end point of etching in the material. When the dry-etching of the material has been completed, an emission spectrum intensity of helium having a single peak occurs.

Abstract: Method and system of predicting attribute value in the learning system, (a) where expected value of equivalent example and its classification class is generated by domain knowledge, with respect to the test example being supplemented with candidates of a plural number of attribute values, in which the attribute lacking part of attribute values can adopt in the learning system, having (i) attribute descriptions containing a plural number of training examples, each of which contains attribute and its attribute value, and such training example and classification class adopted by each training example, and (ii) domain knowledge generating a pair of second example and its classification class from a pair of first example and its classification class, as equivalent example, (b) where classification class of equivalent example generated as above is predicted by decision tree produced based on the above attribute descriptions, and (c) where the attribute value lacking the above test example is predicted by use of the

Abstract: A dielectric ceramic composition is disclosed which consists principally of barium oxide, titanium oxide, neodymium oxide, samarium oxide and bismuth oxide, which are represented by the following formula xBaO--yTiO.sub.2 --z[(1-a-b)Nd.sub.2 O.sub.3 --aSm.sub.2 O.sub.3 --bBi.sub.2 O.sub.3 ], where 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.24, x+y+z=1, 0<a.ltoreq.0.25 and 0<b.ltoreq.0.30. Also disclosed is a dielectric ceramic composition which consists principally of: barium oxide, titanium oxide, neodymium oxide, samarium oxide and bismuth oxide as major components which are represented by the following formula xBaO--yTiO.sub.2 --z[1-a-b)Nd.sub.2 O.sub.3 -aSm.sub.2 O.sub.3 --bBi.sub.2 O.sub.3 ], where 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.25, x+y+z=1, 0<a.ltoreq.0.30 and 0<b.ltoreq.0.35; and not more than 2.0 parts by weight of alumina per 100 parts by weight of a total of the major components.

Abstract: Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.

Abstract: In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.

Abstract: As shown in FIG. 4, a wiring pattern of a semiconductor integrated circuit device of the present invention comprises a wiring portion extending from a connection hole and a connection portion located on the connection hole and having a matching allowance with respect to said connection hole on said wiring portion side being formed wider than a predetermined matching allowance by a predetermined width with which a required yield of successful matching can be assured.

Abstract: An insulation film is formed on a semiconductor substrate in which semiconductor elements are formed. A plurality of wiring layers and interlaid insulation films are alternately laminated on the insulation film. The design margins of the laminated wiring layers and via holes formed in the interlaid insulation films are set to be larger as they are set at a higher level. The design margin is determined by using the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate as parameters.