Abstract: An apparatus for cleaning semiconductor devices has a mixing section for mixing a chemical solution with pure water. A semiconductor substrate to be cleaned is placed on a support. An ultrasonic generator applies ultrasonic vibrations to the supplied pure water. The mixing section mixes a predetermined chemical solution with the pure water applied with the ultrasonic vibrations and supplies a desired pure water solution onto the semiconductor substrate.

Abstract: The present invention relates to a method for producing high silicon steel strip in a continuous treatment line through chemical vapor deposition (called "CVD" hereinafter), wherein the steel strip is subjected continuously to siliconization at temperatures between 1023.degree. and 1200.degree. C. by CVD in a non-oxidizing gas atmosphere containing SiCl.sub.4 between 5% and 35% in molar fraction. Subsequently a diffusion treatment is performed in a non-oxidizing gas atmosphere not containing SICl.sub.4 for diffusing Si uniformly throughout the steel strip, which is then cooled and coiled. If required, the steel strip may be coated with an insolating film and subjected to a baking treatment, before cooling and coiling.

Abstract: A semiconductor device has a first interconnection pattern formed on a semiconductor substrate, and a second interconnection pattern located in and over a through hole formed at a composite insulating layer structure. The composite insulating layer structure is constituted by a first inorganic insulating film and an organic insulating film. At a peripheral region of the second interconnection pattern, the organic insulating film is partially eliminated to form an eliminated portion. The semiconductor device also has a second inorganic insulating film which is formed over the organic insulating film and is directly formed on the first inorganic insulating film, via the eliminated portion.

Abstract: A plasma chemical vapor deposition apparatus comprises a reaction chamber, electrodes provided in the reaction chamber and a side wall constituting part of the reaction chamber and having a wafer access opening, at least the side wall having its surface portion covered with an insulating member. The insulating member prevents abnormal discharge between the electrodes and side wall.

Abstract: In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combusion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

Abstract: A latent curing agent for epoxy resin, characterized in that the latent curing agent is the hydrazides of the formula (I);(NH.sub.2 NHCOCH.sub.2 CH.sub.2).sub.2 N(CH.sub.2).sub.11 CONHNH.sub.2 (I)The present curing agent is useful in formulating storable, one-package, heat-curable epoxy resin-based compositions.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce buring without oxidation.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combustion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

Abstract: A method for manufacturing semiconductor devices comprising the steps of forming a first wiring pattern including first and second lower layers on a semiconductor body, forming an insulation film which covers the first wiring pattern, forming a first hole of 1.5 .mu.m and a second hole of 3 .mu.m in first and second areas of the insulation film which lie over the first and second lower layers, forming a second wiring pattern having first and second upper layers respectively connected to the first and second lower layers via the first and second holes. In the method, the hole formation step includes the substeps of forming a resist film which covers the insulation film, forming a resist pattern by effecting the photolithographic process of exposing the insulation film to light by using a mask pattern having a first hole defining area of 1.5 .mu.m and a second hole defining area of 2.4 .mu.m, and etching the insulation film with the resist pattern used as a mask.

Abstract: A sputtering device includes a vacuum chamber, a target disposed in the vacuum chamber, a protection plate formed to surround the target with a space therebetween, and having an opening formed in front of the target, a substrate holder for holding a semiconductor wafer substrate and substantially closing the opening in front of the target in cooperation with the semiconductor wafer substrate, and an A.C. power source for striking the target with charged particles to emit target material when the semiconductor wafer substrate is set in front of the target, whereby depositing target material thereon as a sputtered film. The sputtering device further includes a temperature sensor, a heater unit and heater controller to heat at least the protection plate to a specified temperature and to maintain the specified temperature after sputtering is complete.

Abstract: An apparatus for adding a first input value and a second input value smaller than the first input value comprises a memory device for memorizing an under flow component; a first adder for adding an output value from the memory device and the first input value; a second adder for adding an output value of the first adder and the second input value; a first subtracter for subtracting the second input value from an output value of the second adder; and a comparator for comparing the output value of the first adder and an output value of the first subtracter. It is judged by an output value of the comparator whether or not the output value of the first adder is memorized in the memory device.

Abstract: A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes, a metal protection plate formed to surround said target and having a first opening facing the front surface of the target, and a vacuum chamber for receiving the electrodes and the protection plate in a reduced-pressure condition during the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate further has a second opening which is formed separately from the first opening to decentralize target power in the inner space defined by the protection plate when the high-frequency bias sputtering process is effected such that the first opening is closed by the substrate electrode.

Abstract: A recess is formed in the surface area of a layer-insulation film by an isotropic etching process, and a hole is formed in the recess by a first anisotropic etching process. After this, a second anisotropic etching process is effected to taper the hole to remove an edge portion at the opening of the recess, the boundary portion between the recess and the side wall formed by the anisotropic etching process, and the vertical side wall of the hole. A wiring metal layer is formed on part of the layer-insulation film and in the hole.

Abstract: A semiconductor device has a passivation layer including a polyimide film. Argon ions are implanted in the polyimide film to convert it into an electrically stable insulating film.

Abstract: This invention relates to a continuously treating line for a steel band, having a heating furnace by directly flaming. For heating the steel band with causing reduction, the heating furnace of directly flaming system is provided with a plurality of heating burners of reduction system which may form non-equilibrium range of the air and the fuel in a flame, that is, a reduction range, wherein the heating burners are positioned at predetermined arrangement with respect to the steel band and at a certain pitch predetermined in relation with an inner diameter of the burner in a line running direction.The treating line has said heating furnace constructed as mentioned above and a subsequent atmosphere furnace, and said atmosphere furnace may be provided with a sealing chamber having various means for avoiding invasion of the outer air.

Abstract: A method and an apparatus, wherein heat can be effectively transferred to molten metal contained in a reaction vessel. The pressure of the gaseous atmosphere within the vessel is maintained higher than atmospheric pressure. Oxygen gas is blown to a layer of molten slag contained in the vessel through tuyeres set in the reaction vessel, thereby to achieve post-combustion therein. The pressure in the vessel is controlled within the range of 2.0 to 5.0 kg/cm.sup.2 by a pressure regulator.