Abstract: A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate on which a first insulation film is formed, forming a first conductive layer on the first insulation film, forming a hillock of the first conductive layer, forming a second insulation film on the structure, removing that portion of the second insulation film, in self-align with the hillock, which is on the hillock, thereby forming a contact hole leading to the first conductive layer, and forming on the structure a second conductive layer extending into the contact hole and contacting the first conductive layer.

Abstract: A method of manufacturing a semiconductor device, comprising the steps of sequentially forming a buried region and an epitaxial layer on a major surface of a semiconductor substrate, forming a conductive layer along an annular trench extending to the buried region, filling the annular trench with an insulating material and forming a functional element in said epitaxial layer surrounded by said buried region and said insulating material within said annular trench. In this method, the step of forming the conductive layer along the annular trench is carried out by the steps of forming an annular trench extending through said buried region, and depositing a conductive layer on only a side wall surface of said annular trench.

Abstract: A curable epoxy resin composition, comprising (1) an alicyclic epoxy resin having an average of more than one epoxy group per molecule, (2) a polybasic acid hydrazide, and (3) a latent curing agent for said epoxy resin which comprises an addition product obtained by reacting (a) a polyfunctional epoxy compound with (b) a compound having at least one functional group in the molecule selected from the group consisting of OH, SH, COOH and CONHNH.sub.2 together with a tertiary amino group, or by reacting said components (a) and (b) with (c) an organic compound which has more than two active hydrogen atoms in the molecule, said reactions occurring under conditions in which the ratio of (a) to (b) or (a) to (b) and (c) ranges from 0.8 to 2.5 equivalents of (a) per equivalent of the total active hydrogen atoms in component (b) and in components (b) and (c), the molar ratio of (c) to (b) being 0.2:1 to 1:1, and said addition product having a softening point of 60.degree. to 180.degree. C.

Abstract: A semiconductor device with a bonding section comprising a semiconductor substrate, a silicon layer formed on the semiconductor substrate with a first insulating layer interposed therebetween, and a bonding pad formed on the silicon layer with a second insulating layer interposed therebetween. The silicon layer has substantially the same size as the bonding pad. When a lead line is bonded to the bonding pad, the silicon layer lessens the stress caused by the bonding.

Abstract: A method for planarizing the surface of an insulation layer deposited on a first interconnection layer to allow a second interconnection layer deposited thereon without causing a breakage of the second interconnection layer. This method is characterized in that at least two insulation films, different in etching characteristics each other, are first formed on the first interconnection layer, and then a resist layer is deposited on the second insulating film. Subsequently, a portion of the resist layer is etched to expose the top surface of the second insulating film, and the second insulating film is selectively and anisotropically etched using the remaining resist layer as a mask. After removing the first insulating film and the remaining resist mark, a third insulating film is deposited to a thickness sufficient to make flat the surface thereof.

Abstract: A semiconductor device having a multilayer wiring structure which comprises a semiconductor substrate, a first wiring layer deposited on said substrate, and a second wiring layer deposited on said first wiring layer with insulating layers disposed therebetween, wherein the insulating interlayer consists of an inorganic insulating layer and a polyimide-based resin film overlying the inorganic insulating layer. The thickness ratio of the polyimide-based resin film to the inorganic insulating film ranges from 0.1 to 0.5. A method of manufacturing a semiconductor device of a multilayer wiring structure wherein an opening is formed in the insulating interlayer to have a small step.

Abstract: A semiconductor device is disclosed which includes a multilayer formed of a hard inorganic main insulation film and a soft subinsulation film as insulation interlayers, and a hard inorganic insulation film as a final passivation film. The final passivation film is directly deposited on the hard inorganic main insulation film of the multilayer.

Abstract: A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.

Abstract: A delivery device in which an endless belt rotatably driven is brought into contact with the foremost sheet of a stack of sheets of paper stored in a registered relationship with each other and the sheets of paper are delivered one at a time by the endless belt through a gate gap defined by a rotary member which guides the endless belt and a gate forming member disposed in opposed relationship with the rotary member. The sheets of paper can be delivered one at a time in a predetermined spaced apart relationship by utilizing the slack of the endless belt.

Abstract: A latent curing agent for epoxy resin, characterized in that the latent curing agent is the hydrazides of the formula (I) or (II). ##STR1## The present curing agent is useful in formulating storable, one-package, heat-curable epoxy resin-based compositions.

Abstract: An addition product obtained by reacting (a) a polyfunctional epoxy compound and (b) a compound having at least one functional group of OH group, SH group, COOH group and CONHNH.sub.2 group together with a tertiary amino group in the molecule, and an addition product obtained (a), (b) and (c) an organic compound having two or more active hydrogen atoms in the molecule (excluding a compound having an epoxy group or tertiary amino group) are good curing agents for epxoy resin. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.

Abstract: Hydrazides of the formula (I) or (II)N--CH.sub.2 CH.sub.2 CONHNH.sub.2).sub.3 (I)(NH.sub.2 NHCOCH.sub.2 CH.sub.2).sub.2 N--R--N--CH.sub.2 CH.sub.2 CONHNH.sub.2).sub.2 (II)are good latent curing agents for epoxy resin, in the formula (II) R is divalent hydrocarbon residue having 2-24 carbon atoms. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.

Abstract: A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.

Abstract: A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.

Abstract: A vortex blower having an impeller provided with an annular recess laterally opening around an axis of rotation, a casing disposed so as to face the impeller and cover a radially outer portion of the impeller, an arcuate recess formed around the rotation axis in a portion of the casing which extends between a suction port and a discharge port and opposes to the annular recess, and a plurality of blades provided in the annular recess to divide the recess into a plurality of circumferentially arranged pockets, each having a radially outer end extending towards the arcuate recess beyond the annular recess. The vortex blower having such a construction can operate safely even when drawing air in which dust is suspended.

Abstract: Hydrazides of the formula ##STR1## are good curing agents for epoxy resin, in the formula R.sub.1 and R.sub.2 being each hydrogen atom, C.sub.1 -C.sub.8 alkyl radical or --CH.sub.2 CH.sub.2 SCH.sub.3, R being hydrogen atom or methyl radical. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resins-based compositions.

Abstract: A system is adapted to etch an aluminium film on a semiconductor wafer into a predetermined pattern by immersing the film in an etching solution. The system comprises a voltage detecting circuit for detecting a voltage created between a platinum electrode and the aluminium film on the semiconductor wafer which are immersed in the etching solution, a comparator for comparing a reference voltage with the voltage detected by the voltage detecting circuit to produce an output signal, and a timer for starting a time count operation upon receipt of the output signal from the comparator and for producing an etching completion signal when it continuously receives the output signal from the comparator for a predetermined time period.

Abstract: Hydrazides of the formula ##STR1## are good curing agents for epoxy resin, wherein in the formula, X is an aromatic hydrocarbon residue of dihydric phenol, ##STR2## The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.

Abstract: Hydrazides of the formula ##STR1## are good curing agents for epoxy resin. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.

Abstract: A vortex blower including a casing, an annular air passageway defined in the casing, an impeller mounted for rotation in the casing, a partition wall, a suction port and a discharge port disposed on both sides of the partition wall and communicated with each other through the annular air passageway, and an extension wall formed by extending at least one wall surface of the partition wall along a surface of rotation of the impeller, the extension wall tapering in going toward its forward end. The blower is further formed with at least one projecting wall continuous with the partition wall and an inner wall surface of the air passageway in the vicinity of the partition wall, for shutting off the noise produced in the vicinity of the partition wall and preventing it from being transmitted to outside to thereby reduce the noise produced by the blower.