Patents by Inventor Masahiro Joei
Masahiro Joei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230034528Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.Type: ApplicationFiled: October 7, 2022Publication date: February 2, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Kaori Takimoto
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Publication number: 20220416184Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.Type: ApplicationFiled: August 31, 2022Publication date: December 29, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko HAYASHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA
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Publication number: 20220415969Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.Type: ApplicationFiled: November 12, 2020Publication date: December 29, 2022Inventors: Masahiro JOEI, Kenichi MURATA, Fumihiko KOGA, Iwao YAGI, Shintarou HIRATA, Hideaki TOGASHI, Yosuke SAITO, Nobutoshi FUJII
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Patent number: 11539011Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.Type: GrantFiled: June 20, 2019Date of Patent: December 27, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko Hayashi, Masahiro Joei, Kenichi Murata, Shintarou Hirata
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Publication number: 20220392931Abstract: A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit.Type: ApplicationFiled: November 2, 2020Publication date: December 8, 2022Inventors: YUKIO KANEDA, HIDEAKI TOGASHI, FUMIHIKO KOGA, MASAHIRO JOEI, KENICHI MURATA, SHINTAROU HIRATA, NOBUHIRO KAWAI
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Patent number: 11515360Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.Type: GrantFiled: May 10, 2019Date of Patent: November 29, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Kenichi Murata
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Patent number: 11489015Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.Type: GrantFiled: October 12, 2020Date of Patent: November 1, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Kaori Takimoto
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Publication number: 20220271073Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.Type: ApplicationFiled: June 17, 2020Publication date: August 25, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki TOGASHI, Tetsuji YAMAGUCHI, Nobuhiro KAWAI, Koji SEKIGUCHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Yuta HASEGAWA, Yoshito NAGASHIMA
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Publication number: 20210313381Abstract: Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film.Type: ApplicationFiled: July 25, 2019Publication date: October 7, 2021Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi MURATA, Masahiro JOEI, Fumihiko KOGA, Iwao YAGI, Shintarou HIRATA, Hideaki TOGASHI, Yosuke SAITO, Shingo TAKAHASHI
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Patent number: 11127910Abstract: An imaging device according to the disclosure includes: a semiconductor substrate including an effective pixel region in which a plurality of pixels are disposed, and a peripheral region provided around the effective pixel region; an organic photoelectric conversion layer provided on side of the semiconductor substrate on which a light receiving surface is disposed; a first sealing layer provided on the semiconductor substrate; a recess provided in the first sealing layer on the effective pixel region; and a light shielding film provided on the first sealing layer on the peripheral region.Type: GrantFiled: February 15, 2017Date of Patent: September 21, 2021Assignee: SONY CORPORATIONInventors: Masahiro Joei, Shigehiro Ikehara, Shuji Manda
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Publication number: 20210288111Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.Type: ApplicationFiled: July 3, 2019Publication date: September 16, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Toshihiko HAYASHI
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Publication number: 20210273187Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.Type: ApplicationFiled: June 20, 2019Publication date: September 2, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko HAYASHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA
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Publication number: 20210273017Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and a first hydrogen-blocking layer that covers above the organic photoelectric conversion layer, a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer.Type: ApplicationFiled: July 19, 2019Publication date: September 2, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi MURATA, Masahiro JOEI, Shingo TAKAHASHI
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Publication number: 20210265582Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.Type: ApplicationFiled: July 30, 2019Publication date: August 26, 2021Inventors: SHINTAROU HIRATA, MASAHIRO JOEI, KENICHI MURATA, MASASHI BANDO, YOSUKE SAITO, RYOSUKE SUZUKI
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Publication number: 20210249474Abstract: There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor including a stacked structure that includes a semiconductor substrate, a first photoelectric converter provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode, a photoelectric conversion film, and a readout electrode are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.Type: ApplicationFiled: June 11, 2019Publication date: August 12, 2021Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki TOGASHI, Iwao YAGI, Masahiro JOEI, Fumihiko KOGA, Kenichi MURATA, Shintarou HIRATA, Yosuke SAITO, Akira FURUKAWA
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Publication number: 20210233948Abstract: A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided.Type: ApplicationFiled: April 19, 2019Publication date: July 29, 2021Applicant: SONY CORPORATIONInventors: Masahiro JOEI, Kenichi MURATA, Fumihiko KOGA, Iwao YAGI, Shintarou HIRATA, Hideaki TOGASHI, Yosuke SAITO
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Publication number: 20210202581Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.Type: ApplicationFiled: May 10, 2019Publication date: July 1, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro JOEI, Kenichi MURATA
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Patent number: 11049906Abstract: The present technology relates to an imaging device, a manufacturing device, and a manufacturing method. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.Type: GrantFiled: January 31, 2020Date of Patent: June 29, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Shuji Manda
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Patent number: 10978514Abstract: A solid-state imaging device includes: a plurality of pixels each including a first electrode, an organic photoelectric conversion film, and a second electrode in this order on a substrate, the organic photoelectric conversion film including a first inclined surface on a side wall; and a first sealing film formed, on the plurality of pixels, to cover the side wall of the organic photoelectric conversion film and the second electrode.Type: GrantFiled: August 18, 2016Date of Patent: April 13, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Masahiro Joei
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Patent number: 10964754Abstract: The present disclosure relates to a solid-state image pickup element in order to enable inhibition of a variation in the photoelectric conversion characteristic of an organic photoelectric conversion film due to atmospheric exposure and a manufacturing method of the solid-state image pickup element, and an electronic device. The solid-state image pickup element includes: a photoelectric conversion film formed above a semiconductor substrate; and a sidewall sealing a side face of the photoelectric conversion film. The sidewall includes a re-deposited film of a film directly under the sidewall. The present disclosure is applicable to, for example, a CMOS image sensor or the like.Type: GrantFiled: November 17, 2017Date of Patent: March 30, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Kenichi Murata