Abstract: A manufacturing method of a semiconductor device, including the steps of forming a metal wire on a circuit formed on a semiconductor substrate, forming an insulating film on the metal wire, forming a via hole in the insulating film so as to expose a surface of the metal wire by selectively etching the insulating film by a plasma dry etching method, measuring a first level difference between the surface of the metal wire and the surface of the insulating film by a non-contact measurement method, removing the metal oxide film on the surface of the metal film by cleaning the surface of the metal film, measuring a second level difference between the surface of the metal film and the surface of the insulating film by a non-contact measurement method, and determining an amount of oxidation of the metal wire from a difference between the first and the second level differences.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming an insulating film on a conductive pattern formed on a substrate; forming a resist pattern on the insulating film; performing etching to the insulating film using the resist pattern as a mask to form in the insulating film an opening at which part of the surface of the conductive pattern is exposed; forming an antioxidant layer on the part of surface of the conductive pattern exposed while removing the resist pattern; and depositing a conductive film on the conductive pattern from which the antioxidant layer has been removed.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming an insulating film on a conductive pattern formed on a substrate; forming a resist pattern on the insulating film; performing etching to the insulating film using the resist pattern as a mask to form in the insulating film an opening at which part of the surface of the conductive pattern is exposed; forming an antioxidant layer on the part of surface of the conductive pattern exposed while removing the resist pattern; and depositing a conductive film on the conductive pattern from which the antioxidant layer has been removed.