Abstract: Solid-state image-pickup devices (10), including: at least one first photoelectric conversion section (11B, 11R) disposed in a substrate (11); a second photoelectric conversion section (11G) disposed over the substrate and including an organic photoelectric conversion layer (16); and an ultraviolet protective film (18) that covers a light incident surface of the organic photoelectric conversion layer, and methods of producing the same.

Abstract: The present technology relates to an imaging device, a manufacturing device, and a manufacturing method capable of preventing a substance such as hydrogen from entering and preventing change in performance. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.

Abstract: Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus. A solid-state image pickup device includes a pixel section that includes a plurality of pixels, the pixels each including one or more organic photoelectric conversion sections, wherein the pixel section includes an effective pixel region and an optical black region, and the organic photoelectric conversion sections of the optical black region include a light-shielding film and a buffer film on a light-incidence side.

Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

Abstract: The present disclosure relates to a solid-state image sensor and an electronic device enabling prevention of entrance of incident light from adjacent pixels and suppression of color mixture, decrease in resolution, and decrease in sensitivity. In a solid-state image sensor according to one aspect of the present disclosure, each pixel includes: these different photoelectric conversion parts configured to perform photoelectric conversion of light of a first wavelength of light of a second wavelength and a third wavelength respectively. An electrode wiring provided at a boundary of adjacent pixels, horizontally connects an electrode of at least one of the photoelectric conversion parts in one of the adjacent pixels with an electrode of the corresponding one of the photoelectric conversion parts in another of the adjacent pixels and vertically connects with an electrode of at least one of the photoelectric conversion parts of each of the pixels.

Abstract: Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus. A solid-state image pickup device includes a pixel section that includes a plurality of pixels, the pixels each including one or more organic photoelectric conversion sections, wherein the pixel section includes an effective pixel region and an optical black region, and the organic photoelectric conversion sections of the optical black region include a light-shielding film and a buffer film on a light-incidence side.

Abstract: Image sensors, image pickup devices, and electronic apparatuses are provided. These can include an image sensor or image pickup device that includes a first insulating layer over a semiconductor substrate. A depression section is formed in the first insulating layer. An organic photoelectric conversion section fills the depression section. One or more inorganic photoelectric conversion sections can also be provided, with the organic photoelectric conversion section overlapping the inorganic photoelectric conversion sections. Alternatively or in addition, the depression section can taper from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section.

Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

Abstract: Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus. A solid-state image pickup device includes a pixel section that includes a plurality of pixels, the pixels each including one or more organic photoelectric conversion sections, wherein the pixel section includes an effective pixel region and an optical black region, and the organic photoelectric conversion sections of the optical black region include a light-shielding film and a buffer film on a light-incidence side.

Abstract: Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus. A solid-state image pickup device includes a pixel section that includes a plurality of pixels, the pixels each including one or more organic photoelectric conversion sections, wherein the pixel section includes an effective pixel region and an optical black region, and the organic photoelectric conversion sections of the optical black region include a light-shielding film and a buffer film on a light-incidence side.

Abstract: Image sensors, image pickup devices, and electronic apparatuses are provided. These can include an image sensor or image pickup device that includes a first insulating layer over a semiconductor substrate. A depression section is formed in the first insulating layer. An organic photoelectric conversion section fills the depression section. One or more inorganic photoelectric conversion sections can also be provided, with the organic photoelectric conversion section overlapping the inorganic photoelectric conversion sections. Alternatively or in addition, the depression section can taper from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section.

Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

Abstract: Provided is a solid-state image pickup device that makes it possible to enhance image quality, and a manufacturing method thereof, and an electronic apparatus. A solid-state image pickup device includes a pixel section that includes a plurality of pixels, the pixels each including one or more organic photoelectric conversion sections, wherein the pixel section includes an effective pixel region and an optical black region, and the organic photoelectric conversion sections of the optical black region include a light-shielding film and a buffer film on a light-incidence side.

Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

Abstract: A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insulating film filling gate electrode spacing with a thinner thickness on the gate electrodes than the film thickness on the flat surface of the semiconductor substrate and low-hygroscopic insulating film formed on the hygroscopic insulating film. This structure enables suppressing an increase of contact resistance due to H2O liberated from the hygroscopic insulating film even if very fine contact is formed between the adjacent gate electrodes.

Abstract: The present invention constitutes a semiconductor device wherein a Ni-containing metal silicide layer is formed on a semiconductor substrate and its uppermost surface is nitrided. According to this structure, a dangling bond of silicon existing in the metal silicide layer and nitrogen are bonded by nitridation of the uppermost surface of the metal silicide layer. Therefore, diffusion of oxygen into the metal silicide layer can be suppressed. As a result, electrical insulation due to oxidation of the metal silicide layer can be reduced and the contact resistance can be stabilized.

Abstract: A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insulating film filling gate electrode spacing with a thinner thickness on the gate electrodes than the film thickness on the flat surface of the semiconductor substrate and low-hygroscopic insulating film formed on the hygroscopic insulating film. This structure enables suppressing an increase of contact resistance due to H2O liberated from the hygroscopic insulating film even if very fine contact is formed between the adjacent gate electrodes.

Abstract: A manufacturing method of a semiconductor device, including the steps of forming a metal wire on a circuit formed on a semiconductor substrate, forming an insulating film on the metal wire, forming a via hole in the insulating film so as to expose a surface of the metal wire by selectively etching the insulating film by a plasma dry etching method, measuring a first level difference between the surface of the metal wire and the surface of the insulating film by a non-contact measurement method, removing the metal oxide film on the surface of the metal film by cleaning the surface of the metal film, measuring a second level difference between the surface of the metal film and the surface of the insulating film by a non-contact measurement method, and determining an amount of oxidation of the metal wire from a difference between the first and the second level differences.