Abstract: A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

Abstract: Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.

Abstract: A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.

Abstract: A storage device includes a drive selection section (1), a hard disk drive (HDD) (2), and a non-volatile memory drive (3). When an instruction such as a data I/O instruction is issued from a host such as a CPU (5) and an ATA controller (6) to the hard disk drive (HDD) (2), the drive selection section (1) receives the address value. If the address value is included in the address space predefined, the non-volatile memory drive (3) is made to execute the instruction. Otherwise, the hard disk drive (HDD) (2) is made to execute the instruction.

Abstract: A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.

Abstract: An intake air temperature sensor capable of detecting an intake air temperature highly accurately and at high speed. The intake air temperature sensor of the present invention includes: a secondary passage 7 taking in an intake airflow; a flow rate detecting element 13 disposed in the secondary passage 7; an intake air temperature detecting element 4 provided outside the secondary passage; a temperature sensor 9 detecting a temperature of a fitting section of the intake air temperature detecting element 4; a circuit board 11 disposed in a casing; and an integrated circuit 10 applying a correction process to an output of the intake air temperature detecting element 4 on the basis of signals output from the temperature sensor 9 and a flow rate detecting element 13.

Abstract: A thermal flow sensor includes a heater temperature controller that realizes stable startup characteristics and prevents degradation of a sensor element and can also accommodate a smaller heater. The sensor also includes a semiconductor substrate; a cavity portion provided in the semiconductor substrate; a dielectric film provided on the semiconductor substrate; a thin layer area formed as a result of the dielectric film covering the cavity portion; a heating resistor provided in the thin layer area on the dielectric film; a first temperature-sensitive resistor provided in the thin layer area on the dielectric film; a heating controller; a second temperature-sensitive resistor provided near the heating resistor; and a flow rate detector that detects a flow rate of a fluid on the basis of temperature of the second temperature-sensitive resistor. The heating controller controls the temperature of the heating resistor on the basis of first and second reference temperatures.

Abstract: A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.

Abstract: A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

Abstract: An intake temperature sensor capable of precisely detecting the temperature of intake at high speed even in a low air mass flow zone is provided. In an intake temperature sensor having a temperature detecting element 6 inserted in an opening provided in an intake pipe 3 to be disposed in the intake pipe, a temperature detecting element is mechanically joined with a heat sink 4 directly exposed to the flow of the intake flowing in the intake pipe, and the temperature of the intake is output based on an output obtained from the temperature detecting element. Thus, the thermal resistance of the temperature detecting element with respect to the intake flow can be reduced; therefore, the intake temperature sensor capable of precisely detecting the temperature of the intake at high speed even in the low air mass flow zone can be provided.

Abstract: A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

Abstract: A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.

Abstract: The present invention provides a highly-sensitive thermal-type flow-rate sensor with enhanced reliability. Provided is a thermal-type flow-rate sensor including: a passage into which a measurement-target fluid is introduced; and a sensor element which is provided in the passage and which measures the flow rate of the measurement-target fluid. The sensor element 1 includes: a semiconductor substrate; a hollow portion formed in the semiconductor substrate; and a heating resistor formed on an electric insulating film above the hollow portion. The sensor element measures the flow rate of the measurement-target fluid by radiating heat from the heating resistor to the measurement-target fluid.

Abstract: The present invention provides a high-accuracy electrostatic capacitance type physical quantity sensor and angular velocity sensor configured so as to be capable of suppressing noise derived from internal noise while maintaining resistance to externally-incoming noise. A detection element 10 has a movable mass 18 supported displaceably by a physical quantity given from the outside, and a detection electrode Ef. A shield wire 16 is disposed around wirings connected to the input of a capacitance detection circuit 30 and is connected to a dc potential of low impedance. A value Cin of an input capacitance relative to a fixed potential of low impedance at a portion at which the detection element 10 is connected with the capacitance detection circuit 30 is set to fall within a range of 1.5 pF<Cin<20 pF.

Abstract: A physiologically active substance collecting device, includes: a collecting section brought into contact with a body surface of a living organism to acquire a physiologically active substance from the body surface; and a liquid sending means for sending a solvent to the collecting section, the collecting section having an aperture at which the solvent flown by being sent from the liquid sending means contacts the body surface.

Abstract: A physiologically active substance collecting device, includes: a collecting section brought into contact with a body surface of a living organism to acquire a physiologically active substance from the body surface; and a liquid sending means for sending a solvent to the collecting section, the collecting section having an aperture at which the solvent flown by being sent from the liquid sending means contacts the body surface.

Abstract: An oscillator is oscillated at a predetermined oscillation frequency. A detecting unit exerts Coriolis force on the oscillator. A repetitive control system applies an external force to the oscillator so as to cancel out the Coriolis force to achieve an angular velocity measuring operation at a high sensitivity and a high S/N ratio.

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.

Abstract: A simply configured thermal flowmeter can provide high measurement accuracy over a long period of time by suppressing the characteristics degradation due to adhering contaminants. On the surface of a diaphragm part, a heater resistor is formed. Temperature difference sensors through are disposed on the two sides of the heater resistor (upstream and downstream sides in the flow direction of an air stream). The temperature difference sensors are disposed upstream of the heater resistor while the temperature difference sensors are disposed downstream of the heater resistor. Outside the temperature difference sensors, heating temperature sensors are formed. Control is performed so that the temperature of the heating temperature sensors is set higher than the air stream temperature by a certain degree. Therefore, even if contaminants adhere to the sensor device, the temperature of the heating temperature sensors is held constant.