Abstract: Failures can be detected with high accuracy even the ambient temperature changes or background vibration is applied.

Abstract: The present invention relates to 1-amino-2-vinylcyclopropane carboxylic acid amide or a salt thereof. By obtaining optically active 1-amino-2-vinylcyclopropane carboxylic acid amide or a salt thereof by hydrolyzing optically active 1-amino-2-vinylcyclopropane carbonitrile or a salt thereof according to the production method of the present invention, 1-amino-2-vinylcyclopropane carboxylic acid amide or a salt thereof, which is useful as a pharmaceutical/agrochemical intermediate, can be easily obtained. The present invention is capable of providing a substrate to be subjected to optical resolution, which enables the production of optically active 1-amino-2-vinylcyclopropane carboxylic acid, which is widely used as a raw material for pharmaceutical and agrochemical products and is especially important as an intermediate for therapeutic agents for hepatitis C, inexpensively with high purity and high yield.

Abstract: There is provided a sample liquid injection tool including a reservoir section configured to store a sample liquid, a channel having one end protruding from an outer surface and configured to discharge the sample liquid therein from a protrusion end to an outside, and a heating unit and a filter installed between the reservoir section and the channel to enable passage of the liquid.

Abstract: The purpose of the present invention is to achieve accurate angular velocity detection even when an angular velocity detection sensor is set in an environment in which oscillation and electromagnetic noise have significant influence. Provided is an angular velocity detection device which has an oscillating body displaceable in first and second directions that are perpendicular to each other, and which detects, as an angular velocity, a displacement of the oscillating body in the second direction while the oscillating body is being oscillated in the first direction, wherein in accordance with a frequency change in a drive signal for oscillating the oscillating body in the first direction, the frequency of a servo signal for detecting the angular velocity from the quantity of displacement in the second direction is changed (see FIG. 1).

Abstract: The present invention provides a high-responsiveness and high-accuracy thermal gas sensor configured to enable gas to be analyzed based on a variation in heat conductivity. The thermal gas sensor includes a substrate 2 with a cavity portion 5, a thin-film support 6 stacked in the cavity portion and comprising a plurality of insulating layers 8a and 8b, and a first heating member 3 and a second heating member 4 both sandwiched between the insulating layers in the thin-film support. The second heating member is located around a periphery of the first heating member. The first heating member is controlled to a temperature higher than a temperature to which the second heating member is controlled. The concentration of ambient gas is measured based on power applied to the first heating member.

Abstract: A thermal flow sensor includes a heater temperature controller that realizes stable startup characteristics and prevents degradation of a sensor element and can also accommodate a smaller heater. The sensor also includes a semiconductor substrate; a cavity portion provided in the semiconductor substrate; a dielectric film provided on the semiconductor substrate; a thin layer area formed as a result of the dielectric film covering the cavity portion; a heating resistor provided in the thin layer area on the dielectric film; a first temperature-sensitive resistor provided in the thin layer area on the dielectric film; a heating controller; a second temperature-sensitive resistor provided near the heating resistor; and a flow rate detector that detects a flow rate of a fluid on the basis of temperature of the second temperature-sensitive resistor. The heating controller controls the temperature of the heating resistor on the basis of first and second reference temperatures.

Abstract: There is provided a microchip for chemical reaction in which a solid-phase reagent whose reagent composition can be identified based on appearance is contained.

Abstract: An intake air temperature sensor capable of detecting an intake air temperature highly accurately and at high speed. The intake air temperature sensor of the present invention includes: a secondary passage 7 taking in an intake airflow; a flow rate detecting element 13 disposed in the secondary passage 7; an intake air temperature detecting element 4 provided outside the secondary passage; a temperature sensor 9 detecting a temperature of a fitting section of the intake air temperature detecting element 4; a circuit board 11 disposed in a casing; and an integrated circuit 10 applying a correction process to an output of the intake air temperature detecting element 4 on the basis of signals output from the temperature sensor 9 and a flow rate detecting element 13.

Abstract: Provided is a compact thermal type flowmeter that can perform a partial thermal treatment on a sensor element portion without affecting other elements and can improve the reliability of a sensor element while improving the sensitivity of the sensor element. A thermal type flowmeter includes a hollow portion which is formed in a semiconductor substrate, a thin film portion which is formed by insulating films provided to cover the hollow portion and, a heating resistor body and a temperature-measuring resistor body which are formed between the insulating films. In a method for manufacturing the thermal type flowmeter, a thermal treatment is performed to grow a crystal grain size of the heating resistor body and a crystal grain size of the temperature-measuring resistor body by heating the thin film portion after forming the thin film portion.

Abstract: An object of the present invention is to provide a thermal type flow rate sensor that offers high sensitivity and improved reliability. A sensor element according to the present invention includes a semiconductor substrate, a cavity portion formed on the semiconductor substrate, a heating resistor formed on the cavity portion via an electrically insulating film, a heating temperature sensor for detecting heating temperature of the heating resistor, and a driving circuit for controlling the heating temperature of the heating resistor using the temperature detected by the heating temperature sensor. The heating temperature sensor comprises temperature-sensitive resistors having resistance values varying according to temperature and disposed upstream and downstream of a direction of flow of a fluid to be measured relative to the heating resistor and on upper and lower sides in a direction perpendicular to the direction of flow of the fluid to be measured relative to the heating resistor.

Abstract: A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.

Abstract: Measuring flow rate of gas based on amount of heat transfer from gas to temperature-sensing resistors, comprises: substrate having hollow space formed therethrough; an insulating film deposited on the substrate so as to cover the hollow space; a heat-generating resistor formed on the insulating film; temperature-sensing resistors arranged adjacent to the heat-generating resistor; electrodes arranged at an edge of the semiconductor substrate so electrodes are parallel to the edge; and wiring connecting the electrodes and heat-generating resistors. Thermal resistance of a first area is made almost equal to thermal resistance of a second area, first area is defined by the side of the heat-generating resistor closer to the electrodes and by the side of the hollow space closer to the electrodes, and the second area is defined by the opposite side of the heat-generating resistor and by the opposite side of the hollow space.

Abstract: The present invention aims to provide an angular velocity detection device which is capable of reducing the effect of coupling between a drive electrode and a first displacement detection electrode by a floating capacity, and is low in cost. In the angular velocity detection device, an oscillating body 21 is displaceable in a first direction and a second direction which orthogonally intersect each other. The oscillating body 21 is oscillated in the first direction by an electrostatic force corresponding to a drive signal generated by a non-interference signal generator 1. A carrier signal generated by the non-interference signal generator 1 is applied to the oscillating body 21. A first displacement detection circuit 3 and a second displacement detection circuit 4 each detect a displacement of the oscillating body 21 as a displacement modulation signal indicative of a change in electrostatic capacity synchronized with the carrier signal to thereby detect an angular velocity.

Abstract: In an existing disconnection detection circuit for a bridge circuit, consideration is not taken into the fact that an offset voltage or temperature characteristic of a bridge output is degraded. Provided is a disconnection detection circuit for a bridge circuit capable of suppressing a change in a characteristic of a sensor to a minimal extent. A disconnection detection circuit 8a for a bridge circuit in accordance with the present invention comprises conducting means 9 and 10 each of which causes a current to flow from an output terminal of the bridge circuit to a predetermined potential, potential difference detecting means 12 and 13 each of which detects a potential difference between the potential at the output terminal of the bridge circuit and the predetermined potential, and a disconnection detecting means 14 that detects a disconnection on the basis of the outputs of the potential difference detecting means.

Abstract: Disclosed in an individual information determining method in which individual information of a subject is determined based on one or a plurality of pieces of biomolecule data collected from a surface of a body surface of the subject.

Abstract: Provided is a high-precision, mechanically robust thermal humidity sensor. A detecting element 1 of the thermal humidity sensor of the present invention has a diaphragm (a bridge structure) 2 formed on a planar substrate which is formed from a material with high thermal conductivity such as silicon or ceramic. Formed on the diaphragm 2 are temperature detecting resistors 4, 5, 6, and 7 and a heating resistor 3 arranged in a manner surrounding the temperature detecting resistors. Humidity is detected based on the outputs of the temperature detecting resistors 4, 5, 6, and 7. Accordingly, humidity measurement errors that can possibly occur due to the leakage of heat through the diaphragm 2 to the planar substrate can be reduced.

Abstract: Provided is a heating temperature adjustment circuit in a thermal flow meter capable of adjusting fluctuations of a heating temperature of a heat-generating resistor due to fluctuations of resistances with high accuracy and low cost. The thermal flow meter comprises: a heat-generating resistor that generates heat when a current flows therethrough; a first temperature measuring resistor, a second resistor, a third resistor, and a fourth resistor whose resistance values vary due to temperature; and a fixed resistance having a resistance temperature coefficient lower than that of the first temperature measuring resistor, and measuring a flow rate of a fluid by controlling the heating temperature of the heat-generating resistor.

Abstract: A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.

Abstract: Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.

Abstract: A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.