Abstract: A drive controlling unit includes a final angle position memorizing device for memorizing a final angle position at a time of termination of the vehicle driving operation, an input complete data memorizing device capable of switching the memory content between a first memory condition and a second memory condition. The first memory condition indicates completeness of writing of the final angle position in the final angle position memorizing device. The second memory condition indicates failure in writing the final angle position therein. The input complete data memorizing device is capable of maintaining the memory content even when the vehicle is stationary.

Abstract: A vehicle steering control system is provided which is capable of reliably protecting a motor for driving a wheel steering shaft. In the system, a current sensor and a motor rotational speed detection section respectively detect a current applied to the steering shaft drive motor and the motor rotational speed of the steering shaft drive motor, and current inference means infers the motor current applied to the steering shaft drive motor based on the detected motor rotational speed. Abnormal judgment means compares the current inference value obtained by the current inference means with a current detection value indicated by the current sensor to judge whether the current sensor is normal or not. Abnormal judgment output means outputs the result of the abnormal judgment when the current sensor is judged to be abnormal. When a trouble occurs that the current sensor fails to operate normally due to the malfunction or the like, such a trouble can be recognized at the early stage of the malfunction.

Abstract: The terminal voltages of respective phase coils of a steering shaft driving motor constituted by a three-phase brushless motor are separately detected. When the terminal voltages detected at at least three different conducting terminals u, v, and w are made Vu, Vv, and Vw, respectively, and the values when those detected values Vu, Vv, and Vw are arranged in order from largest to smallest voltage are made V1, V2, and V3, respectively, provided that V1?V2?V3, a calculation is performed to determine if V1+V3 coincides with 2*V2 within a predetermined allowable range, and a failure is determined based on results obtained from such a calculation.

Abstract: A drive controlling means includes a final angle position memorizing means for memorizing a final angle position at a time of termination of the vehicle driving operation, an input complete data memorizing means capable of switching the memory content between a first memory condition and a second memory condition. The first memory condition indicates completeness of writing of the final angle position in the final angle position memorizing means. The second memory condition indicates failure in writing the final angle position therein. The input complete data memorizing means is capable of maintaining the memory content even when the vehicle is stationary.

Abstract: A vehicle steering control system is provided which is capable of reliably protecting a motor for driving a wheel steering shaft. In the system, a current sensor and a motor rotational speed detection section respectively detect a current applied to the steering shaft drive motor and the motor rotational speed of the steering shaft drive motor, and current inference means infers the motor current applied to the steering shaft drive motor based on the detected motor rotational speed. Abnormal judgment means compares the current inference value obtained by the current inference means with a current detection value indicated by the current sensor to judge whether the current sensor is normal or not. Abnormal judgment output means outputs the result of the abnormal judgment when the current sensor is judged to be abnormal. When a trouble occurs that the current sensor fails to operate normally due to the malfunction or the like, such a trouble can be recognized at the early stage of the malfunction.

Abstract: After a copper diffusion preventing film 4 is formed on a copper pad 1, a barrier metal including a titanium film 5, a nickel film 6, and a palladium film 7 is formed on the copper diffusion preventing film 4. The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

Abstract: After a copper diffusion preventing film 4 is formed on a copper pad 1, a barrier metal including a titanium film 5, a nickel film 6, and a palladium film 7 is formed on the copper diffusion preventing film 4. The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

Abstract: There is provided an electroless Ni—B plating liquid for forming, a Ni—B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni—B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH4+). The electroless Ni—B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni—B alloy film having an FCC crystalline structure.

Abstract: A vehicle steering control system is provided which is capable of reliably protecting a motor for driving a wheel steering shaft. The offset output characteristic of a current sensor for detecting the electric current applied to the steering shaft drive motor is actually measured prior to the actual use of the steering control system, and offset compensation information is prepared based on the measured value of the offset output characteristic for storage in an EEPROM. Further, an output value of the current sensor and an output value of a reference current measuring system are measured independently of each other with the supply voltage for use in measurement being set to a constant value. Then, current gain compensation information is prepared based on the output values so measured and is stored in the EEPROM. In the later actual use (i.e.

Abstract: The terminal voltages of respective phase coils of a steering shaft driving motor constituted by a three-phase brushless motor are separately detected. When the terminal voltages detected at at least three different conducting terminals u, v, and w are made Vu, Vv, and Vw, respectively, and the values when those detected values Vu, Vv, and Vw are arranged in order from largest to smallest voltage are made V1, V2, and V3, respectively, provided that V1≧V2≧V3, a calculation is performed to determine if V1+V3 coincides with 2*V2 within a predetermined allowable range, and a failure is determined based on results obtained from such a calculation.

Abstract: A vehicle steering control system is provided which is capable of reliably protecting a motor for driving a wheel steering shaft. The offset output characteristic of a current sensor for detecting the electric current applied to the steering shaft drive motor is actually measured prior to the actual use of the steering control system, and offset compensation information is prepared based on the measured value of the offset output characteristic for storage in an EEPROM. Further, an output value of the current sensor and an output value of a reference current measuring system are measured independently of each other with the supply voltage for use in measurement being set to a constant value. Then, current gain compensation information is prepared based on the output values so measured and is stored in the EEPROM. In the later actual use (i.e.

Abstract: A semiconductor device comprises an electrode formed above a substrate, an under bump metal (UBM) film on the electrode, the under bump metal film being in the shape of a recess, and a bump electrode embedded in the under bump metal film, the bump electrode having sides and bottom thereof surrounded by the under bump metal film.

Abstract: There is provided an electroless Ni—B plating liquid for forming, a Ni—B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni—B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH4+). The electroless Ni—B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni—B alloy film having an FCC crystalline structure.

Abstract: A present semiconductor device includes a plurality of bump electrodes formed over a semiconductor substrate to allow signals to be input and output to and from a semiconductor element. After the formation of the bump electrodes an organic insulting film is coated on the whole surface of a resultant wafer structure, followed by a drying, a solidifying and an etch-back step. By so doing, a top area of the bump electrode is more projected than a top area of the organic insulating film. A lead is connected by a pressure and heat to the top area of the bump electrode.

Abstract: The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

Abstract: A semiconductor device comprises an electrode formed above a substrate, an under bump metal (UBM) film on the electrode, the under bump metal film being in the shape of a recess, and a bump electrode embedded in the under bump metal film, the bump electrode having sides and bottom thereof surrounded by the under bump metal film.

Abstract: There is provided an electroless Ni—B plating liquid for forming, a Ni—B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni—B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH4+). The electroless Ni—B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni—B alloy film having an FCC crystalline structure.

Abstract: A semiconductor device includes at least one bump electrode for inputting and outputting signals to and from the semiconductor device. The bump electrode is positioned above a semiconductor substrate with an electrode pad and metal layer disposed therebetween. A resin film covers a surface of the semiconductor substrate except at a top area of the bump electrode. The bump electrode projects a sufficient distance above a top surface of the resin film so that heat induced defects are reduced and pressure exerted on a top area of the bump electrode is absorbed to suppress occurrence of cracks in the resin film.

Abstract: Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a pad electrode on an insulating film covering a semiconductor substrate, the step of forming a first metal layer on the pad electrode, the first metal layer being capable of forming a strong adhesive bond with the pad layer, followed by forming a second metal layer on the first metal layer, the second metal layer acting as a barrier layer and being capable of forming a strong adhesive bond with a solder, the step of forming a resist pattern on the second metal layer in a manner to cover that region which corresponds to the pad electrode, the step of etching the second metal layer using the resist pattern as a mask, the step of removing the resist pattern, the step of forming a solder layer selectively on the second metal layer, and the step of selectively etching the first metal layer using the solder layer as a mask.

Abstract: With a semiconductor device manufacturing method, a lower-layer interconnection is formed on a circuit board on which a plurality of semiconductor chips are mounted. Using a screen plate with openings corresponding to desired positions on the lower-layer interconnection, screen printing of a metal paste is effected, and the printed metal paste is dried and calcined by heat treatment to form a metal pillar on the lower-layer interconnection. An insulating film covering the lower-layer interconnection and the metal pillar is formed so that the tip of the metal pillar may be exposed. An upper-layer interconnection is formed on the insulating film so that this layer may contact with the exposed tip of the metal pillar.