Abstract: A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.

Abstract: A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.

Abstract: A control device for a belt type continuously variable transmission device includes primary And secondary pulleys and a belt and controls gear ratio based on a running radius of the belt on a pulley by controlling primary and secondary oil pressures. The transmission includes a belt slip control unit and a belt slip control permission determining unit. The belt slip control unit performs such control as to oscillate the secondary oil pressure, estimates a belt slip condition by monitoring the phase difference between an oscillation component included in an actual secondary oil pressure and an oscillation component included in an actual gear ration, and then reduces the actual secondary oil pressure to maintain a predetermined belt slip condition. The belt slip control permission determining unit permits belt slip control when a transmission rate as a change rate of the gear ratio is less than a predetermined value.

Abstract: A control device controls a belt type continuously variable transmission including a belt slip controller and a belt slip control permission determining unit. The device decreases belt friction when an estimated accuracy of a belt slip condition is high and prevents a belt from greatly slipping when an estimated accuracy is low. The device includes primary and secondary pulleys and the belt, and controls a gear ratio based on a running radius of the belt on a pulley by controlling primary and secondary oil pressures. The controller oscillates a secondary oil pressure, estimates the belt slip condition by monitoring a phase difference between oscillation components, and reduces an actual secondary oil pressure to maintain a predetermined belt slip condition. The determining unit permits belt slip control when a torque change speed input to the transmission mechanism is less than a predetermined value.

Abstract: A control device controls a belt type continuously variable transmission including a primary pulley, a secondary pulley, and a belt, and controls a gear ratio based on a primary oil pressure and a secondary oil pressure. The control device includes a belt slip controller which oscillates the secondary oil pressure and monitors a phase difference between an oscillation component included in an actual secondary oil pressure and an oscillation component included in an actual gear ratio to estimate a belt slip state. The controller controls the actual secondary oil pressure to decrease based on the estimation to maintain a predetermined belt slip state. An oscillation amplitude setter sets an oscillation amplitude of the secondary hydraulic pressure small when the gear ratio is high compared with when the gear ratio is low, in a case of oscillating the secondary hydraulic pressure in the belt slip control.

Abstract: A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.

Abstract: A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.

Abstract: A belt type continuously variable transmission mechanism has a primary pulley, a secondary pulley, and a belt, and a secondary hydraulic pressure controller to determine command secondary hydraulic pressure by feedback control based on the deviation between target secondary hydraulic pressure and actual hydraulic pressure, and control the secondary hydraulic pressure to the secondary pulley. The belt type continuously variable transmission mechanism further includes a belt slip control device to estimate a belt slip condition by monitoring the phase difference between an oscillation component included in the actual secondary hydraulic pressure and an oscillation component included in the actual transmission gear ratio and control the actual secondary hydraulic pressure to decrease based on the estimation so that a predetermined belt slip condition is maintained.

Abstract: A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 ?m or less, and the metal layer being exposed in the first portion.

Abstract: A semiconductor device includes a SiC substrate, a semiconductor layer formed on the SiC substrate, a via hole penetrating through the SiC substrate and the semiconductor layer, a Cu pad that is formed on the semiconductor layer and is in contact with the via hole, and a barrier layer covering an upper face and side faces of the Cu pad, and restrains Cu diffusion.

Abstract: A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2.

Abstract: This invention enables an abnormality analysis to be easily and reliably performed in the FA system of the EtherCAT (registered trademark). A controller has a protocol monitor function of operating in a monitor system program, and constantly monitors data communicated with a remote device. The controller has an abnormality diagnosis function of detecting abnormality, and thus holds the data monitored immediately before when abnormality is detected. As the protocol monitor function is incorporated, a protocol monitor does not need to be newly plugged into the network as an external device after the occurrence of abnormality, and the data that becomes the cause can be held from the abnormality that occurred first by monitoring from the beginning of the operation of the system and can be used for analysis.

Abstract: A method of manufacturing a semiconductor device includes: forming a lower electrode layer in contact with a surface of a nitride semiconductor layer; forming an Al layer on the lower electrode layer; performing a heat treatment after the formation of the Al layer; removing the Al layer after the heat treatment is performed; and forming an upper electrode layer on the lower electrode layer after the removal of the Al layer.

Abstract: A semiconductor device is configured so as to comprise a substrate, an n-type semiconductor layer or an undoped semiconductor layer on the substrate, and an ohmic electrode on the n-type semiconductor layer or the undoped semiconductor layer, and the ohmic electrode is configured so as to comprise a tantalum layer formed on the n-type semiconductor layer or the undoped semiconductor layer, an aluminum layer formed on the tantalum layer, and a metal layer formed on the aluminum layer and made of any one material of tantalum, nickel, palladium, and molybdenum.

Abstract: Provided is control device and method for a belt type continuously variable transmission which can reduce drive energy consumption by a decrease in belt friction when the estimated accuracy of belt slip condition is high and which can prevent the belt from greatly slipping during belt slip control when the estimated accuracy of belt slip condition is low. The device includes a primary pulley (42), a secondary pulley (43), and a belt (44) and controls gear ratio based on the running radius of the belt (44) on the pulley by controlling the primary oil pressure and the secondary oil pressure. A belt type continuously variable transmission (4) comprises a belt slip control means (FIG.

Abstract: Provided is control device and method for a belt type continuously variable transmission which can reduce drive energy consumption by a decrease in belt friction when the estimated accuracy of belt slip condition is high and which can prevent the belt from greatly slipping during belt slip control when the estimated accuracy of belt slip condition is low. The device includes a primary pulley (42), a secondary pulley (43), and a belt (44) and controls gear ratio based on the running radius of the belt (44) on the pulley by controlling the primary oil pressure and the secondary oil pressure.

Abstract: Provided are control device and method for a belt type continuously variable transmission which can improve control stability of secondary hydraulic pressure with the estimated accuracy of a belt slip condition during belt slip control ensured. The device has a primary pulley (42), a secondary pulley (43), and a belt (44), and a secondary hydraulic pressure controller (92) to determine command secondary hydraulic pressure by feedback control based on the deviation (?) between target secondary hydraulic pressure and actual hydraulic pressure, and control the secondary hydraulic pressure to the secondary pulley (43). A belt type continuously variable transmission mechanism (4) includes a belt slip control means (FIG.

Abstract: Provided is control device and method for a belt type continuously variable transmission which can reduce drive energy consumption by a decrease in belt friction when the estimated accuracy of belt slip condition is high and which can prevent the belt from greatly slipping during belt slip control when the estimated accuracy of belt slip condition is low. The device includes a primary pulley (42), a secondary pulley (43), and a belt (44) and controls gear ratio based on the running radius of the belt (44) on the pulley by controlling the primary oil pressure and the secondary oil pressure.

Abstract: A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2.

Abstract: A semiconductor device includes a SiC substrate, a semiconductor layer formed on the SiC substrate, a via hole penetrating through the SiC substrate and the semiconductor layer, a Cu pad that is formed on the semiconductor layer and is in contact with the via hole, and a barrier layer covering an upper face and side faces of the Cu pad, and restrains Cu diffusion.