Abstract: In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.

Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.

Abstract: A wireless communication device including: a wireless communication unit configured to perform wireless communication with another wireless communication device in accordance with an IEEE 802.11 standard; and a control unit configured to control the wireless communication unit so that the wireless communication unit includes schedule information in a PLCP header defined in the IEEE 802.11 standard and transmits the schedule information to the other wireless communication device, the schedule information relating to orthogonal frequency-division multiple access.

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Abstract: In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.

Abstract: Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O2 gas and CH3F gas, or CH2F2 gas.

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a perip

Abstract: A wireless communication device including: a wireless communication unit configured to perform wireless communication with another wireless communication device in accordance with an IEEE 802.11 standard; and a control unit configured to control the wireless communication unit so that the wireless communication unit includes schedule information in a PLCP header defined in the IEEE 802.11 standard and transmits the schedule information to the other wireless communication device, the schedule information relating to orthogonal frequency-division multiple access.

Abstract: A plasma processing apparatus equipped with an electrode disposed inside a sample deck on which a wafer is mounted, the sample deck being disposed in the lower part within a processing chamber inside a vacuum container, the electrode being supplied with high frequency power during processing of the wafer, a ring-like member electrode made of a conductor disposed to surround the upper surface on the outer peripheral side of the sample deck, a first ring-like cover made of a dielectric body disposed to cover the ring-like member, and a second ring-like cover made of a conductor disposed to cover the first ring-like cover, and a controller that adjusts the magnitude of the high frequency power according to a result of detection of voltage of the high frequency power supplied to the ring-like member during processing of the wafer.

Abstract: A wireless communication device that includes circuitry that receives a physical layer (PHY) header from a first wireless communication device belonging to a first wireless communication network different from a second wireless communication network to which the wireless communication device belongs, and controls transmission power on a basis of allowance signal information obtained in reception of the PHY header, and the PHY header includes the allowance signal information in which allowance of another signal for signal reception in a first destination wireless communication device which is a destination of a frame subsequent to the PHY header is specified.

Abstract: A wireless communication device including: a wireless communication unit configured to perform wireless communication with another wireless communication device in accordance with an IEEE 802.11 standard; and a control unit configured to control the wireless communication unit so that the wireless communication unit includes schedule information in a PLCP header defined in the IEEE 802.11 standard and transmits the schedule information to the other wireless communication device, the schedule information relating to orthogonal frequency-division multiple access.

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.

Abstract: A wireless communication device that includes circuitry that receives a physical layer (PHY) header from a first wireless communication device belonging to a first wireless communication network different from a second wireless communication network to which the wireless communication device belongs, and controls transmission power on a basis of allowance signal information obtained in reception of the PHY header, and the PHY header includes the allowance signal information in which allowance of another signal for signal reception in a first destination wireless communication device which is a destination of a frame subsequent to the PHY header is specified.

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Abstract: A wireless communication device that includes circuitry that receives a physical layer (PHY) header from a first wireless communication device belonging to a first wireless communication network different from a second wireless communication network to which the wireless communication device belongs, and controls transmission power on a basis of allowance signal information obtained in reception of the PHY header, and the PHY header includes the allowance signal information in which allowance of another signal for signal reception in a first destination wireless communication device which is a destination of a frame subsequent to the PHY header is specified.

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.