Abstract: The present disclosure relates to a content supply device, a content supply method, a program, and a content supply system that make it possible to extend an adaptive streaming technique employing the DASH and supply content through a plurality of different delivery paths According to a first aspect of the present disclosure, there is provided a content supply device that supplies a plurality of pieces of streaming data that include content of a same subject and differ in an attribute according to an adaptive streaming technique, the content supply device including: a supply unit configured to supply the plurality of pieces of streaming data to a reception side via a plurality of different networks; and a metafile generating unit configured to generate a metafile including an acquisition destination of a manifest file in which a QoS parameter for selecting the plurality of pieces of streaming data to be supplied by the reception side and a condition value of the QoS parameter are described and supply the meta

Abstract: In some embodiments, an information processing apparatus is configured to communicate with a first wireless communication apparatus via a first communication system, the information processing apparatus comprising control circuitry configured to: receive information relating to a second communication system discovered by the first wireless communication apparatus, the second communication system being different from the first communication system; and use the information relating to the second communication system to control grouping of a plurality of wireless communication apparatuses each configured to wirelessly communicate with the information processing apparatus using the first communication system, wherein the plurality of wireless communication apparatuses comprises the first wireless communication apparatus.

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

Abstract: This technology relates to a transmitting device, a transmitting method, a receiving device, and a receiving method capable of easily obtaining a mosaic screen. Metadata described by using an attribute and an attribute value, the metadata of content including signaling information indicating that video is thumbnail video suitable for forming the mosaic screen and the attribute indicating minimum buffer time required before replay of the content starts is delivered. This technology may be applied when the content is delivered, for example.

Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.

Abstract: In some embodiments, an information processing apparatus is configured to communicate with a first wireless communication apparatus via a first communication system, the information processing apparatus comprising control circuitry configured to: receive information relating to a second communication system discovered by the first wireless communication apparatus, the second communication system being different from the first communication system; and use the information relating to the second communication system to control grouping of a plurality of wireless communication apparatuses each configured to wirelessly communicate with the information processing apparatus using the first communication system, wherein the plurality of wireless communication apparatuses comprises the first wireless communication apparatus.

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

Abstract: The present technology relates to a transmission apparatus, a transmission method, a reception apparatus, and a reception method which can easily obtain a mosaic screen. Metadata of content is distributed, and the metadata is described using an attribute and an attribute value and includes signaling information indicating that a video is a thumbnail video suitable for constituting a mosaic screen, and the attribute indicating information to refer to a file including information to receive content supplied by a service. The present technology can be applied when, for example, content is to be distributed.

Abstract: Data communication is performed appropriately. An information processing apparatus includes a control unit. In a case of transmitting data by using wireless communication, the control unit performs control of performing transmission while including determination information with which a device in a transmission destination of the data determines in a data link layer whether to pass the data to a higher layer of the data link layer into the data. Also, in a case of receiving data by using wireless communication, the control unit performs control of determining whether to pass the data to a higher layer of a data link layer on the basis of information included in the data (determination information that can be grasped in data link layer).

Abstract: [Object] To provide a mechanism capable of improving use efficiency of communication resources during a transmission period of a wireless communication device belonging to another wireless communication network. [Solution] A wireless communication device including: a communication unit configured to receive a physical layer (PHY) header including modulation scheme information from a first wireless communication device belonging to a first wireless communication network different from a second wireless communication network to which a self-device belongs; and a control unit configured to control transmission power on a basis of information obtained in reception of the PHY header, and a wireless communication method.

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.

Abstract: The present technology relates to a transmission apparatus, a transmission method, a reception apparatus, and a reception method which can easily obtain a mosaic screen. Metadata of content is distributed, and the metadata is described using an attribute and an attribute value and includes signaling information indicating that a video is a thumbnail video suitable for constituting a mosaic screen, and the attribute indicating information to refer to a file including information to receive content supplied by a service. The present technology can be applied when, for example, content is to be distributed.

Abstract: A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

Abstract: [Object] To provide a communication device and communication method that are capable of both efficiently utilizing wireless communication resources and reducing electric power consumption in a frame exchange period with a communication device different from an own device. [Solution] A communication device includes a communication unit configured to receive a first frame from a first communication device, the first frame being addressed to a second communication device that is different from the own device. The first frame includes information indicating a frame exchange period and information on whether the frame exchange period is changed. In addition, a communication device includes a communication unit configured to transmit a first frame that includes information indicating a frame exchange period and information on whether the frame exchange period is changed.

Abstract: In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.

Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

Abstract: To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force 5 without breakdown of an electrostatic chucking film. When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a 10 first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from 15 ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.