Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.

Abstract: A precoated skin material for an automobile interior part comprising (a) a skin material for an automobile interior part and (b) a one-pack type thermally crosslinkable polymer composition comprising (i) a thermoplastic olefinic polymer having a carboxylic acid group or an acid anhydride group, (ii) a latent curing agent, (iii) a carbonyl compound as a solvent and (iv) a tackifier, which composition is coated on the back surface of the skin material, wherein the latent curing agent is a solid polyamine having a melting point of 80 to 200° C. which form hydrolyzable reaction products by a condensation reaction with the carbonyl compound used as the solvent, or a hydrolyzable reaction product of a diamine with a carbonyl compound.

Abstract: Disclosed is a method of manufacturing a semiconductor integrated circuit device which will not incur an increase in chip cost and a reduction in throughput, wherein the method includes a step of patterning a gate (electrode or wiring). With the method, a hard mask on the gate is patterned by a resist mask, and then the resist mask is removed. The gate material side surface is trimmed by using the hard mask under such dry etching conditions that no reaction product will be left on the gate material side surface to form an I-type gate.

Abstract: A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment.

Abstract: A precoated skin material for an automobile interior part comprising (a) a skin material for an automobile interior part and (b) a one-pack type thermally crosslinkable polymer composition comprising (i) a thermoplastic olefinic polymer having a carboxylic acid group or an acid anhydride group, (ii) a latent curing agent, (iii) a carbonyl compound as a solvent and (iv) a tackifier, which composition is coated on the back surface of the skin material, wherein the latent curing agent is a solid polyamine having a melting point of 80 to 200° C. which form hydrolyzable reaction products by a condensation reaction with the carbonyl compound used as the solvent, or a hydrolyzable reaction product of a diamine with a carbonyl compound.

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

Abstract: A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment.

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

Abstract: This invention enables coded audio data to be reliably decoded even if an audio signal coded in blocks not in synchronism with the frames or fields of a video signal is decoded on the basis of these frames of fields. By filling an integral number of coded audio blocks in the period of time corresponding to one frame or field of the video signal, this invention forms an array of coded audio blocks in synchronism with the frames or fields of the video signal before transmission. This avoids separating a coded block in transmitted data at a frame or field boundary, and enables the coded audio data to be reliably decoded so as to prevent the occurrence of a period of time in which decoded data is missing even if a switching operation is carried out on the basis of the frames or fields of the video signal.

Abstract: Provided are an etching method which uses an additive gas stably suppliable also in future, is reduced in the problem of particle contamination, is free from the problem of removability of side-wall protection film and has high shape controlling capacity, and a manufacturing method a highly-reliable semiconductor device by using this etching method. This etching method comprises depositing metal film including an aluminum over a semiconductor device and etching the metal film with a plasma of a mixture gas containing a Cl2 gas, a BCl3 gas and a CH2Cl2 gas.

Abstract: A one-pack type thermally crosslinkable polymer composition comprising a thermoplastic polymer having a carboxylic acid group or an acid anhydride group, and a polyamine compound as a latent curing agent, which is suitably used as an adhesive to adhere a skin material to a substrate of an automobile interior parts.

Abstract: Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.

Abstract: The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.

Abstract: A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced.