Abstract: A product package formed from a one piece box blank that is pre-scored to define the panels of the box and an insert portion for defining a product compartment within a larger box interior. The insert portion includes a front panel, a side panel and an end closure structure for closing the end(s) of the insert compartment Adhesive is applied to select panels so that when the blank is folded and then squared, the box is ready to receive the product, e.g., a literature insert.

Abstract: An image pickup apparatus comprising a first lens unit which comprises at least a negative lens element and at least a positive lens element and has negative refractive power, a second lens unit which has positive refractive power, and an optical path bending reflecting optical element which has a variable reflecting surface disposed in an airspace between a most object side lens component of the first lens unit and a most object side lens component of the second lens unit. This image pickup apparatus changes a magnification by moving the second lens unit along an optical axis and corrects a deviation of an image location by varying a shape of the variable reflecting surface of the reflecting optical element.

Abstract: An electrolytic plating system includes a coil for generating a magnetic field in the direction perpendicular to the subject surface of a wafer on which a Cu film is to be formed. The current components perpendicular to the magnetic field stirs the electrolytic solution without using a stirrer, thereby achieving a uniform thickness for the Cu film without a void therein.

Abstract: In an apparatus for growing a semiconductor single crystal from semiconductor melt, a crucible retains the semiconductor melt. An electrode contacts with the semiconductor melt and applies current to the semiconductor melt. The electrode is formed of the same material as the semiconductor crystal.

Abstract: The object of the invention is to reduce the thickness of electronic image pickup equipment as much as possible, using a zooming mode having stable, high image-formation capabilities from an object at infinity to a near-by object. The electronic image pickup equipment comprises a zoom lens system comprising a negative, first lens group G1, a positive, second lens group G2 and a positive, third lens group G3. For zooming from the wide-angle end to the telephoto end of the zoom lens system upon focused on an object at infinity, the separation between G2 and G3 becomes wise. By moving G3 toward the object side of the system, the system can be focused on a nearer-by object. In the zoom lens system, the second lens group G2 comprises one positive lens 2a, one negative lens 2b and a lens subgroup 2c comprising at least one lens, and the third lens group G3 comprises one positive lens.

Abstract: By using a semiconductor single crystal pulling apparatus for growing single crystals by the Czochralski method while rotating the melt by a magnetic field and electric current, namely by the EMCZ method, which comprises a main pulling means for pulling a single crystal, a holding mechanism for gripping an engaging stepped portion formed on the single crystal through engaging members and a sub pulling means for moving the holding mechanism up and down and in which an electric current is passed through the main pulling means and through the sub pulling means, it is possible to prevent heavy single crystals from undergoing a falling accident and, at the same time, effectively reduce the power consumption. In this pulling apparatus, it is effective to feed an electric current to the sub pulling means alone and it is desirable to dispose two or more electrodes whether the pulling means is of a shaft type or wire type.

Abstract: A method of tracking products in inventory comprises receiving an identifier in a first computer system, the identifier identifying a transaction in which at least one product has been purchased, and transmitting a contact signal from the first computer system to a second computer system, the second computer system storing information relating to a plurality of available products. Information relating to the purchased product is transmitted from the second computer system to the first computer system in response to the second computer receiving the contact signal and used to update information relating to the products in inventory. The identifier is received in the first computer system by scanning a bar code representing the identifier, the bar code being printed on a receipt relating to the transaction. The contact signal and the information relating to the purchased product are transmitted via an internet connection established between the first and second computer systems.

Abstract: A zoom optical system suited for use in an electronic image pickup apparatus comprising a first negative lens unit, a second positive lens unit and a third positive lens unit, in which a magnification is changed from a wide position to a tele position by moving at least the first lens unit and the second lens unit so as to change an airspace between the first lens unit and the second lens unit and widen an airspace between the second lens unit and the third lens unit, the second lens unit comprises a biconvex lens element and a cemented meniscus lens component having a convex surface on the object side, and each lens unit has a small thickness.

Abstract: The object of the invention is to reduce the thickness of electronic image pickup equipment as much as possible, using a zooming mode having stable, high image-formation capabilities from an object at infinity to a near-by object. The electronic image pickup equipment comprises a zoom lens system comprising a negative, first lens group G1, a positive, second lens group G2 and a positive, third lens group G3. For zooming from the wide-angle end to the telephoto end of the zoom lens system upon focused on an object at infinity, the separation between G2 and G3 becomes wise. By moving G3 toward the object side of the system, the system can be focused on a nearer-by object. In the zoom lens system, the second lens group G2 comprises one positive lens 2a, one negative lens 2b and a lens subgroup 2c comprising at least one lens, and the third lens group G3 comprises one positive lens.

Abstract: An apparatus for growing a single crystal of semiconductor is provided, which makes it possible to grown a heavy single crystal of semiconductor of 100 kg or greater in weight even if a growing single crystal contains the neck. In the apparatus, the first and second electrodes are provided in such a way that the first ends of the first and second electrodes are electrically connected to the power supply and the second ends of the first and second electrodes are contacted with the melt in the crucible. During the growth process, a specific voltage is applied across the first ends of the first and second electrodes, thereby forming the electrical current path interconnecting the second ends of the first and second electrodes in the melt. The magnetic field is generated with the magnetic field generator to intersect with the electrical current path in the melt. No electric current flows through the growing single crystal from the melt.

Abstract: A vehicle environment monitoring system for an automotive vehicle is capable of accurately detecting the movement of an object existing in an environment of the vehicle, and determining the possibility of collision between the object and the vehicle, thereby appropriately warning the driver. A relative position of the object to the automotive vehicle is detected from the image obtained by a camera mounted on the vehicle to obtain position data. Positions of the object in a real space are calculated based on a plurality of time series items of the position data detected on the object, and a movement vector of the object is calculated based on the positions in the real space. It is determined based on the movement vector whether or not the object has a high possibility of collision against the automotive vehicle.

Abstract: A single-crystal silicon substrate is provided, which makes it possible to accurately control the concentration and profile of an introduced impurity. This silicon substrate is comprised of a single-crystal Si base layer and a single-crystal Si low oxygen-concentration layer formed on the base layer. The base layer has a first oxygen concentration and the low oxygen-concentration layer has a second oxygen concentration lower than the first oxygen concentration. This silicon substrate is fabricated by (a) growing a single-crystal Si epitaxial layer on the main surface of a single-crystal Si base material in such a way that the epitaxial layer has a second oxygen concentration lower than of the first oxygen concentration, or (b) heat-treating a single-crystal Si base material to cause outward diffusion of oxygen existing in the base material through the main surface thereof, thereby forming a low oxygen-concentration layer extending along the main surface of the base material in the base material.

Abstract: A semiconductor substrate is provided which maintains its gettering capabilities throughout the manufacturing process of a semiconductor device and which prevents previously gettered contaminating impurities from being released again into an operating region of a semiconductor device. The semiconductor substrate includes a silicon substrate, a polysilicon layer, and a high density boron layer. The silicon substrate has a first main surface and a second main surface opposed to the first main surface, and the silicon substrate is used to form a semiconductor device at least indirectly on the first main surface. The polysilicon film is formed at least indirectly on the second main surface, and the high density boron layer is disposed between the silicon substrate and the polysilicon film. Also a ratio of a highest boron density value in the high density boron layer to a lowest boron density value in the silicon substrate is greater than or equal to approximately 100.

Abstract: In an apparatus for growing a semiconductor crystal from semiconductor melt, a crucible retains the semiconductor melt. An electrode contacts with the semiconductor melt and applies current to the semiconductor melt. The electrode is formed by the same material as the semiconductor crystal.

Abstract: An image recognition system recognizes correspondence between object images contained respectively in two images obtained by two infrared ray cameras. One of the two images is set to a reference image and another of the two images to a comparison image. A correlation parameter indicative of a correlation between a reference pattern contained in the reference image and containing an object image and each pattern contained in the comparison image and identical in shape to the reference pattern is calculated by using a luminance value indicative of a luminance of the reference pattern and a luminance value indicative of a luminance of the each pattern contained in the comparison image. Based on the calculated correlation parameter, a pattern having a highest correlation with the reference pattern is extracted from the comparison image as a corresponding pattern which corresponds to the reference pattern.

Abstract: In an apparatus for growing a semiconductor crystal from semiconductor melt, a crucible retains the semiconductor melt. An electrode contacts with the semiconductor melt and applies current to the semiconductor melt. The electrode is formed of the same material as the semiconductor crystal.

Abstract: A plurality of honeycomb pipes bundling a plurality of fine tubes are inserted and fixed at desired positions in a refrigerant piping at proper intervals to form a silencer, and noise is reduced by straightening and homogenizing the disturbance of refrigerant and attenuating transmission of pressure pulsations.

Abstract: A modular plug includes a dielectric housing, a plurality of terminals, and a signal transmission cable. The dielectric housing has a cable insertion end, a mating end opposite to the cable insertion end, a lower body portion, and an upper lid portion connected to the lower body portion. The lower body portion extends from the cable insertion end to the mating end. The lower body portion has a plurality of terminal grooves formed adjacent to the mating end, and a cable receiving space extending from the cable insertion end adjacent to the terminal grooves. The upper lid portion is operable relative to the lower body portion to expose the cable receiving space. The terminals are inserted into the cable receiving space through the terminal grooves. The signal transmission cable is received in the cable receiving space, and has a plurality of conductive wires that extend adjacent to the terminal grooves, respectively, and that are connected electrically to the terminals.

Abstract: A product package formed from a one piece box blank that is pre-scored to define the panels of the box and an insert portion for defining a product compartment within a larger box interior. The insert portion includes a front panel, a side panel and an end closure structure for closing the end(s) of the insert compartment. Adhesive is applied to select panels so that when the blank is folded and then squared, the box is ready to receive the product, e.g., a literature insert.

Abstract: In the growth of a semiconductor single crystal according to the Czochralski method, a magnetic field is generated in a semiconductor melt and a current is supplied in the semiconductor melt in a direction perpendicular to the magnetic field. This makes it possible to cause the semiconductor melt to rotate spontaneously without rotating the crucible, thereby to grow a single crystal of semiconductor without striation even when growing a single crystal of semiconductor having a large diameter. Also it is made possible to exactly control the rotation rate of the semiconductor melt by changing the intensity of the magnetic field and the magnitude of the current independently. Further, the distribution of the rotation rates in the semiconductor melt can also be varied by changing the position of electrodes or electrode protecting tubes for immersing in the semiconductor melt.