Abstract: A modular plug includes a dielectric housing, a plurality of terminals, and a signal transmission cable. The dielectric housing has a cable insertion end, a mating end opposite to the cable insertion end, a lower body portion, and an upper lid portion connected to the lower body portion. The lower body portion extends from the cable insertion end to the mating end. The lower body portion has a plurality of terminal grooves formed adjacent to the mating end, and a cable receiving space extending from the cable insertion end adjacent to the terminal grooves. The upper lid portion is operable relative to the lower body portion to expose the cable receiving space. The terminals are inserted into the cable receiving space through the terminal grooves. The signal transmission cable is received in the cable receiving space, and has a plurality of conductive wires that extend adjacent to the terminal grooves, respectively, and that are connected electrically to the terminals.

Abstract: A product package formed from a one piece box blank that is pre-scored to define the panels of the box and an insert portion for defining a product compartment within a larger box interior. The insert portion includes a front panel, a side panel and an end closure structure for closing the end(s) of the insert compartment. Adhesive is applied to select panels so that when the blank is folded and then squared, the box is ready to receive the product, e.g., a literature insert.

Abstract: In the growth of a semiconductor single crystal according to the Czochralski method, a magnetic field is generated in a semiconductor melt and a current is supplied in the semiconductor melt in a direction perpendicular to the magnetic field. This makes it possible to cause the semiconductor melt to rotate spontaneously without rotating the crucible, thereby to grow a single crystal of semiconductor without striation even when growing a single crystal of semiconductor having a large diameter. Also it is made possible to exactly control the rotation rate of the semiconductor melt by changing the intensity of the magnetic field and the magnitude of the current independently. Further, the distribution of the rotation rates in the semiconductor melt can also be varied by changing the position of electrodes or electrode protecting tubes for immersing in the semiconductor melt.

Abstract: There is provided a method of growing silicon monocrystal by Czochralski method where cusp field is applied to molten silicon, including the step of applying cusp field to molten silicon so that a center of the cusp field is situated at a depth of one-third or greater of an entire depth of the molten silicon, the depth being defined as a distance from a surface level of the molten silicon. The method makes it possible to eliminate growth slits in all regions in a growth direction of grown silicon monocrystal, and in addition, to accomplish uniform oxygen concentration profile where a difference in an oxygen concentration in a direction of a diameter of crystal is equal to or smaller than 5%. Furthermore, the method makes it possible to eliminate growth slits in all regions in a growth direction in a large-diameter silicon monocrystal, for instance, having a 40 cm-diameter.

Abstract: In a Czochralski monocrystalline silicon growing apparatus for growing a silicon monocrystalline by pulling up a crystal seed by a wire in a growing furnace, a magnetic ring is mounted on the silicon monocrystal, and an electromagnet is fixed to the growing furnace for pulling up the magnetic ring.

Abstract: First, sound absorbing plates made of a hard material are fixed to both side plates of shaped steel members extending upward from a sound insulation wall at intervals that are equal to arrangement spans of the shaped steel members. Then, sound absorbing members that have been formed into a predetermined shape and length are attached to outer surfaces of the sound insulation plates.

Abstract: In a method of growing a monocrystalline silicon based on the Czochralski method, the thermal Rossby number is set to at least 80 to develop the convection of a liquid of melted silicon in an axially symmetric form. A tube made of quartz is inserted in the silicon liquid to supply oxygen thereto to control the oxygen density of a resultant crystal. According to this method, there can be grown a silicon monocrystal which contains oxygen in an arbitrary density range from 10.sup.15 /cm.sup.3 to 10.sup.18 /cm.sup.3 and which has a uniform oxygen density variation not exceeding 5% in a plane vertical to a direction of the crystal growth.

Abstract: A sound absorbing material is interposed between an outer perforated plate and an inner plate to constitute a sound absorbing body, which has a bottom wall portion extending generally vertically, a hood portion laterally bulging from the top of the bottom wall portion to assume a semi-circular cross-section, and a top wall portion extending from the hood portion to assume a gentle convex cross-section. A cap is attached to the end face of the top wall portion, and a fixing member is attached to a lower portion of the bottom wall portion to constitute a sound absorbing device. The two sound absorbing devices having the identical structure are fixed to the outer surfaces of an upper portion of an upright sound insulation wall through the fixing members so as to assume a symmetrical fixing posture. The caps of the two sound absorbing devices are connected by a connecting member.

Abstract: A photosensitive polyimide precursor composed of the structural units (A) represented by the following general formula (I) and the structural units (B) represented by the following general formula (II), in which the ratio of the molar quantity of the structural units (A) to the sum of the molar quantity of the structural units (A) and that of the structural units (B) is 0.01 or greater, and having a viscosity of 100 cP or above as measured at 25.degree. C. in the state of a 10% by weight solution in N-methylpyrrolidone: ##STR1## wherein R.sub.1 represents a tetravalent aromatic hydrocarbon residue; R.sub.2 represents a divalent aromatic hydrocarbon residue; X, identical or different represents a halogen or an alkyl group; and m represents 0 or an integer from 1 to 4. The photosensitivity of the present photosensitive polyimide precursor is about 20 to 100 times that of conventional products. After heat dehydration cyclization, it shows a heat resistance of 400.degree. C. or above.