Abstract: A technique capable of shortening process time for plasma cleaning is provided. A method of manufacturing a semiconductor device includes a step of preparing a substrate including a plurality of device regions each including a semiconductor chip electrically connected to a plurality of terminals formed on a main surface by a wire, a step of delivering the substrate while emitting plasma generated in atmospheric pressure to the main surface of the substrate, a step of delivering the substrate while capturing an image of a region of the main surface of the substrate and a step of forming a sealing body by sealing the semiconductor chip and the wire with a resin.

Abstract: A technique capable of shortening process time for plasma cleaning is provided. A method of manufacturing a semiconductor device includes a step of preparing a substrate including a plurality of device regions each including a semiconductor chip electrically connected to a plurality of terminals formed on a main surface by a wire, a step of delivering the substrate while emitting plasma generated in atmospheric pressure to the main surface of the substrate, a step of delivering the substrate while capturing an image of a region of the main surface of the substrate and a step of forming a sealing body by sealing the semiconductor chip and the wire with a resin.

Abstract: A solid state imaging device has a global shutter structure and includes: a photodetector; a wiring layer; a first transparent insulating film disposed immediately above the photodetector and penetrating the wiring layer; a transparent protective film covering the wiring layer and the first transparent insulating film, and having a higher refractive index than the first transparent insulating film; a first projection provided on the transparent protective film and having a quadrilateral shape in top view; and a second transparent insulating film having a lower refractive index than the first projection.

Abstract: A solid state imaging device has a global shutter structure and includes: a photodetector; a wiring layer; a first transparent insulating film disposed immediately above the photodetector and penetrating the wiring layer; a transparent protective film covering the wiring layer and the first transparent insulating film, and having a higher refractive index than the first transparent insulating film; a first projection provided on the transparent protective film and having a quadrilateral shape in top view; and a second transparent insulating film having a lower refractive index than the first projection.

Abstract: Reading reliability of a code formed in a semiconductor device is improved. A manufacturing method of semiconductor devices according to one embodiment includes a step of forming a sealing body MR in a plurality of device regions DVP with a code (first identification information) MK3 being formed outside the device regions DVP of a wiring substrate. Also, the manufacturing method of semiconductor devices according to one embodiment includes a step of, after forming the sealing body MR, reading the code MK3 and affixing another code (second identification information) to the sealing body MR. Further, before the step of forming the sealing body MR, a dam part DM is formed between a marking region MKR in which the code MK3 is formed and the device regions DVP.

Abstract: Reading reliability of a code formed in a semiconductor device is improved. A manufacturing method of semiconductor devices according to one embodiment includes a step of forming a sealing body MR in a plurality of device regions DVP with a code (first identification information) MK3 being formed outside the device regions DVP of a wiring substrate. Also, the manufacturing method of semiconductor devices according to one embodiment includes a step of, after forming the sealing body MR, reading the code MK3 and affixing another code (second identification information) to the sealing body MR. Further, before the step of forming the sealing body MR, a dam part DM is formed between a marking region MKR in which the code MK3 is formed and the device regions DVP.

Abstract: Reading reliability of a code formed in a semiconductor device is improved. A manufacturing method of semiconductor devices according to one embodiment includes a step of forming a sealing body MR in a plurality of device regions DVP with a code (first identification information) MK3 being formed outside the device regions DVP of a wiring substrate. Also, the manufacturing method of semiconductor devices according to one embodiment includes a step of, after forming the sealing body MR, reading the code MK3 and affixing another code (second identification information) to the sealing body MR. Further, before the step of forming the sealing body MR, a dam part DM is formed between a marking region MKR in which the code MK3 is formed and the device regions DVP.

Abstract: A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer (6). The photoelectric conversion region (4) is formed by introducing an n-type impurity into the semiconductor substrate (1). The surface inversion layer (6) is formed by introducing indium into a region of the semiconductor substrate (1) where the photoelectric conversion region (4) is formed.

Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Abstract: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Abstract: A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).

Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Abstract: A light-detecting device, comprising: a semiconductor substrate 101 that is composed of silicon as a base material, and contains carbon at a predetermined concentration; and an epitaxial layer 102 that is formed on the semiconductor substrate 101 and composed of silicon as a base material, the epitaxial layer 102 including a light-detecting unit (mainly 104) a predetermined distance away from the semiconductor substrate 101, wherein the semiconductor substrate 101 is formed using a crystal growth method from melt obtained by melting a material containing silicon and a material containing carbon so that carbon is contained in the semiconductor substrate 101 at the predetermined concentration.

Abstract: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Abstract: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Abstract: A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Abstract: A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer (6). The photoelectric conversion region (4) is formed by introducing an n-type impurity into the semiconductor substrate (1). The surface inversion layer (6) is formed by introducing indium into a region of the semiconductor substrate (1) where the photoelectric conversion region (4) is formed.

Abstract: In a method for manufacturing a solid-state image sensor including forming a photodetector portion for a photoelectric conversion in a semiconductor substrate, and forming a shift register for transferring a signal charge read out from the photodetector portion, an annealing is carried out after an ion implantation for forming a buried channel region constituting the shift register. It is possible to provide a method for manufacturing a solid-state image sensor that avoids the formation of crystal defects in a shift register and a photodetector portion and achieves an excellent output image quality and a large saturation electric charge.

Abstract: A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.