Abstract: A multilayered hydrogen absorbing body is provided which is formed by laminating at least two types of hydrogen absorbing materials. The degrees of strains cause due to absorption/desorption of hydrogen are different between the hydrogen absorbing materials adjacent to each other.

Abstract: A vehicle key-less entry system includes a locking mechanism to lock or unlock vehicle doors; a door-handle detector to detect whether a door handle is manipulated and a manipulation mode when the door handle is detected as manipulated; a mobile device to record identification (ID) information and conduct non-contact communications using the ID information; an authenticator to perform an authentication procedure using the ID information through the non-contact communications with the mobile device when the door handle is detected as manipulated; and a locking controller to control the locking mechanism for locking or unlocking the vehicle door based on the manipulation mode detected by the door-handle detector when a result of the authentication procedure is positive. The door-handle detector may detect whether a door handle is manipulated only.

Abstract: An oil injected screw compressor has an oil separating mechanism integrated with a compressor and hence is made compact in size. A male rotor and a female rotor are received in a rotor casing. The shafts of these rotors are arranged substantially in a horizontal direction. An inner cylindrical wall is arranged under the rotor casing with its center axis arranged substantially in a vertical direction and an outer wall is arranged substantially in a concentric position with the inner wall. A lower casing is hermetically joined to the outer wall. Oil in the working gas which is injected in the compression process of the oil injected screw compressor is primarily separated from the working gas between the inner wall and the outer wall. The primarily separated working gas flows up inside the inner wall and is guided through a manifold into an oil separating element case where the oil is secondarily separated from the working gas.

Abstract: A semiconductor integrated circuit device is composed of logic gates each provided with MOS transistors. The semiconductor integrated circuit device includes a current control device. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors, that have both an operation mode and a low power back-up or sleep mode used for power reduction.

Abstract: Method for manufacturing a memory device, the memory being a memory array with a spare bit line and being provided with a defect recovery scheme featuring a redundancy circuit. The redundancy circuit includes one or more comparing circuits having programmable elements which function as a memory for storing therein a defective address existing in the memory array. The programmable elements of the redundancy circuit can be programmed in accordance with any of a number of different types of defect modes. Each comparing circuit of the redundancy circuit compares information (data) inputted therein, for example, the column and row addresses which may be under the control of an address multiplex system, with that programmed in the programmable elements of the comparing circuit. On the basis of this comparison, an appropriate defect recovery is effected.

Abstract: A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.

Abstract: To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, an address for salvaging a defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit. As a result, a special process is not needed in forming the nonvolatile memory element. In other words, the nonvolatile memory element can be formed in a process of forming a CMOS device and an apparatus of a laser beam for programming is not needed since the programming is carried out in testing. Thus, the time necessary for programming can be shortened, and, therefore, testing costs can be reduced.

Abstract: In a vehicle door mirror device (10), an outer side surface (20B), with respect to a vehicle, of a projection (20) of a door mirror stay (16) is made to be flat. Further, an angle of the outer side surface (20B) with respect to a front-rear direction of the vehicle, inward or outward with respect to the vehicle, is not more than 2 degrees. Therefore, wind arriving at the outer side surface (20B) flows rearward with respect to the vehicle with fluctuation thereof being suppressed, and its flow is straightened. Furthermore, a radius of curvature of a corner portion (20E) at an outer rear side, with respect to the vehicle, of the projection (20) is not more than 15 mm. Therefore, wind arriving at the outer side surface (20B) of the projection (20) is suppressed from flowing along the corner portion (20E), and its flow is straightened. Thus, wind noise performance of the door mirror stay (16) can be improved.

Abstract: A semiconductor memory is provided with a defect recovery scheme featuring a redundancy circuit. The memory array in the memory has a plurality of word lines, a plurality of bit lines, a spare bit line, and a plurality of memory cells. The redundancy circuit includes one or more comparing circuits having programmable elements which function as a memory for storing therein a defective address existing in the memory array. The programmable elements of the redundancy circuit can be programmed in accordance with any of a number of different types of defect modes. Each comparing circuit of the redundancy circuit compares information (data) inputted therein, for example, the column and row addresses which may be under the control of an address multiplex system, with that programmed in the programmable elements of the comparing circuit. On the basis of this comparison, an appropriate defect recovery is effected.

Abstract: To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, an address for salvaging a defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit. As a result, a special process is not needed in forming the nonvolatile memory element. In other words, the nonvolatile memory element can be formed in a process of forming a CMOS device and an apparatus of a laser beam for programming is not needed since the programming is carried out in testing. Thus, the time necessary for programming can be shortened, and, therefore, testing costs can be reduced.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: A color image formation apparatus includes a plurality of stages of photosensitive drums provided for respective developing agents, the photosensitive drums arranged in a predetermined direction; and developer units which are provided for respective photosensitive drums and which develop electrostatic latent images formed on the photosensitive drums, wherein an overlap exists in the predetermined direction between a portion of each photosensitive drum and a portion of the developer unit provided so as to correspond to an adjacent photosensitive drum.

Abstract: On a basic measurement unit arranged in a lattice shape on a chip, a resistance measurement circuit, a capacity measurement circuit, an n-type MOS transistor measurement circuit, a p-type MOS transistor measurement circuit, and a ring oscillator measurement circuit are mounted by several tens of patterns. Each measurement circuit mounted by several tens of patterns is connected to a measurement bus to constitute a measurement bus net in accordance with measured items. Switching of connection of the measurement bus net with a measurement terminal pad is electrically controlled properly by X, Y address selection signals outputted from X, Y address decoders to X, Y address selection signal lines.

Abstract: A hydrogen storage material is expressed by a composition formula, (Ca1-xAx)1-z(Si1-yBy)z, wherein “A” is at least one member selected from the group consisting of alkali metal elements, alkaline-earth metal elements, rare-earth elements, the elements of groups 3 through 6, Ni, Au, In, Tl, Sn, Fe, Co, Cu and Ag; “B” is at least one member selected from the group consisting of the elements of groups 7 through 17, rare-earth elements, Hf and Be; 0≦x<1 by atomic ratio; 0≦y<1 by atomic ratio; and 0.38≦z<0.58 by atomic ratio. It is lightweight as well as less expensive. In principle, neither high-temperature nor high-pressure activation is required, because it exhibits a high initial activity. The operation temperature can be lowered and the hydrogen absorption content can be enlarged by controlling the kind and substitution proportion of the substituent elements appropriately.

Abstract: A semiconductor memory is provided with a defect recovery scheme featuring a redundancy circuit. The memory array in the memory has a plurality of word lines, a plurality of bit lines, a spare bit line, and a plurality of memory cells. The redundancy circuit includes one or more comparing circuits having programmable elements which function as a memory for storing therein a defective address existing in the memory array. The programmable elements of the redundancy circuit can be programmed in accordance with any of a number of different types of defect modes. Each comparing circuit of the redundancy circuit compares information (data) inputted therein, for example, the column and row addresses which may be under the control of an address multiplex system, with that programmed in the programmable elements of the comparing circuit. On the basis of this comparison, an appropriate defect recovery is effected.

Abstract: An oil injected screw compressor has an oil separating mechanism integrated with a compressor and hence is made compact in size. A male rotor and a female rotor are received in a rotor casing. The shafts of these rotors are arranged substantially in a horizontal direction. An inner cylindrical wall is arranged under the rotor casing with its center axis arranged substantially in a vertical direction and an outer wall is arranged substantially in a concentric position with the inner wall. A lower casing is hermetically joined to the outer wall. Oil in the working gas which is injected in the compression process of the oil injected screw compressor is primarily separated from the working gas between the inner wall and the outer wall. The primarily separated working gas flows up inside the inner wall and is guided through a manifold into an oil separating element case where the oil is secondarily separated from the working gas.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: A semiconductor memory is provided with a defect recovery scheme featuring a redundancy circuit. The memory array in the memory has a plurality of word lines, a plurality of bit lines, a spare bit line, and a plurality of memory cells. The redundancy circuit includes one or more comparing circuits having programmable elements which function as a memory for storing therein a defective address existing in the memory array. The programmable elements of the redundancy circuit can be programmed in accordance with any of a number of different types of defect modes. Each comparing circuit of the redundancy circuit compares information (data) inputted therein, for example, the column and row addresses which may be under the control of an address multiplex system, with that programmed in the programmable elements of the comparing circuit. On the basis of this comparison, an appropriate defect recovery is effected.

Abstract: A multilayered hydrogen absorbing body is provided which is formed by laminating at least two types of hydrogen absorbing materials. The degrees of strains cause due to absorption/desorption of hydrogen are different between the hydrogen absorbing materials adjacent to each other.

Abstract: A rear-view mirror for a vehicle. The rear-view mirror has a mirrow body at which is formed an accommodating member. A lamp house containing a lamp bulb and a secondary battery is accommodated in the accommodating member by holders for holding the lamp house from below. The lamp house is pulled out from the accommodating member to illuminate a desired position.