Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a perip

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Abstract: A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Abstract: A plasma processing apparatus includes: a vacuum chamber in which plasma is formed; an inner chamber detachable from the vacuum chamber; a sample stage disposed in the inner chamber; a sample stage ring base disposed in the inner chamber; and a suspension beam coupled to the sample stage ring base in a space between the vacuum chamber and the inner chamber. With the inside of the vacuum chamber hermetically sealed, the inner chamber is placed on the sample stage ring base, and the inside is hermetically sealed. The upper part of the suspension beam is vertically movably held to a sample stage base plate configuring the upper part of the vacuum chamber to cover the inside. The plasma processing apparatus includes a conductive connector sandwiched between the suspension beam made of SUS and the upper part of the member and the sample stage base plate.

Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like

Abstract: A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage.

Abstract: The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present invention provides a vacuum processing apparatus including: a gas supply unit that supplies gas, for performing vacuum processing using normally closed type air-driven valves, to a processing chamber where the vacuum processing is performed, the gas supply unit having an interlock function in which, when a first valve of a pair of the air-driven valves is opened, a second valve of the pair is closed, the gas supply unit including an air circuit that controls air for driving the air-driven valves, the air circuit being configured using an electromagnetic valve having a solenoid coil corresponding to each of the pair of the air-driven valves.

Abstract: The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present invention provides a vacuum processing apparatus including: a gas supply unit that supplies gas, for performing vacuum processing using normally closed type air-driven valves, to a processing chamber where the vacuum processing is performed, the gas supply unit having an interlock function in which, when a first valve of a pair of the air-driven valves is opened, a second valve of the pair is closed, the gas supply unit including an air circuit that controls air for driving the air-driven valves, the air circuit being configured using an electromagnetic valve having a solenoid coil corresponding to each of the pair of the air-driven valves.

Abstract: In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply.

Abstract: In a vacuum processing apparatus including a plurality of vacuum transfer vessels arranged back and forth at the back of a lock chamber, an intermediate chamber arranged between them and capable of accommodating wafers, and processing units connected to respective vacuum transfer vessels, a wafer processed in a pre-processing vessel out of the processing units connected to the respective vacuum transfer vessels is transferred to a post-processing vessel connected to the same vacuum transfer vessel and post-processing is performed.

Abstract: A vacuum processing apparatus including a processing chamber for processing a sample to be processed, a cooling chamber for cooling the high-temperature sample processed in the processing chamber, and a vacuum transfer chamber for establishing a connection between the processing chamber and the cooling chamber, a vacuum transfer robot equipped inside the vacuum transfer chamber, wherein the cooling chamber includes a gas-exhausting unit for reducing pressure inside the cooling chamber, a gas-supplying unit for supplying a gas into the cooling chamber, a pressure-controlling unit for controlling the pressure inside the cooling chamber, a supporting unit for supporting the high-temperature sample, and a mounting stage for proximity-holding the sample supported by the supporting unit, the mounting stage having a temperature-adjusting unit for adjusting the temperature of surface of the mounting stage into a temperature which is capable of cooling the high-temperature sample, the supporting unit having an ascendi

Abstract: A vacuum processing apparatus having an atmospheric-pressure transport chamber for conveying samples, lock chambers that accommodate the samples conveyed in and have an ambient capable of being switched between an atmospheric ambient and a vacuum ambient, a vacuum transport chamber coupled to the lock chambers, and at least one vacuum chamber for processing the samples. The apparatus further includes cooling portions operable to cool the high-temperature samples processed by the vacuum chamber. Each cooling portion has: a sample stage over which the high-temperature samples are placed and which has a coolant channel; gas-blowing tubes disposed closer to the inlet/exit port and acting to blow gas toward the sample stage; and an exhaust port disposed on the opposite side of the sample stage with regard to the inlet/exit port and acting to discharge the gas blown from the gas-blowing tubes.

Abstract: A vacuum processing system including a cassette holder for setting up cassettes in which samples are stored, an air-transfer chamber for transferring the samples, lock chambers for storing the samples transferred from the air-transfer chamber, the lock chambers being capable of switching between air atmosphere and vacuum atmosphere in their inside, a vacuum transfer chamber connected to the lock chambers, vacuum containers for processing the samples transferred via the vacuum transfer chamber, a cooling chamber for cooling the samples down to a first temperature, the samples being processed in at least one of the vacuum containers, and a cooling unit for cooling the samples down to a second temperature, the samples being cooled in the cooling chamber. The cooling unit is deployed in the air transfer chamber, and has a cooling part for cooling the samples, being cooled in the cooling chamber, down to the second temperature.

Abstract: A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.

Abstract: A plasma processing apparatus composed of a processing chamber in a vacuum vessel to which a gas is fed to form a plasma, a sample stage in which a channel for a heat exchange medium is formed, beams for supporting the sample stage in the horizontal direction, a cylindrical space at atmospheric pressure formed below the channel in the sample stage, coupling paths for communicating the inner wall of the cylindrical space with the exterior of the vacuum vessel, a piping conduit for medium formed in the coupling path, a drive mechanism to drive pins for a wafer, and metal blocks covering junctions between the piping conduits for medium and the sample stage, whereby a gas at high temperature is supplied to between the metal blocks and is exhausted through the coupling path.

Abstract: A vacuum processing apparatus which includes a vacuum vessel having a processing chamber provided therein into which a processing gas is supplied to form a plasma and which processes a wafer located in the processing chamber, and a vacuum transfer vessel having a vacuumed transfer chamber coupled with the vacuum vessel provided therein into which the wafer is transferred. A resin-made film having a plasma resistance is bonded onto a surface of a lid of the vacuum transfer vessel on the side of the transfer chamber.