Abstract: A semiconductor device which is designed based on RDR, suppresses the occurrence of a trouble at the boundary between an active region and a power wire and therearound and is small in size and highly integrated. The semiconductor device includes a first conductive impurity region for functional elements which is formed over the main surface of a semiconductor substrate and a second conductive impurity region for power potential to which power potential is applied in at least one standard cell. It also includes insulating layers which are formed over the main surface of the semiconductor substrate and have throughholes reaching the main surface of the semiconductor substrate, and a conductive layer for contact formed in the throughholes of the insulating layers.

Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.

Abstract: A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state.

Abstract: There is provide a low cost liquid display panel with high image quality, the liquid crystal display in which temperature compensation is unnecessary and image quality is not affected by temperature changes of the surrounding environment. In the active matrix cholesteric liquid crystal display panel, the time Tw for applying voltage to the liquid crystal layer at the time of image writing is set so that the variation ?Vs depending on temperature of the writing voltage which makes the liquid crystal layer to show approximate 50% of the maximum reflectance is less than or equal to a predetermined value within a predetermined temperature range.

Abstract: To provide a technique capable of suppressing the diffusion of copper atoms adhering to the back face of a semiconductor substrate from the back face into the inside of the semiconductor substrate, and capable of suppressing performance degradation of semiconductor elements such as a MISFET formed at the main face of the semiconductor substrate, in semiconductor devices using copper wiring for a wiring layer. A copper diffusion prevention film formed at the main face of the semiconductor substrate is denoted by a first copper diffusion prevention film, and a copper diffusion prevention film formed at the back face of the semiconductor substrate is denoted by a second copper diffusion prevention film. The characteristic of the embodiment lies in that the second copper diffusion prevention film is formed at the back face of the semiconductor substrate.

Abstract: A method of manufacturing a donor sheet for transferring a transfer layer having a prescribed shape onto a receiving substrate, wherein: a step for forming an organic semiconductor precursor wherein a solution in which the organic semiconductor precursor which converts to an organic semiconductor due to heat, is coated on a substrate sheet; a step for forming a transfer layer of a prescribed shape by heating the organic semiconductor precursor layer in the prescribed shape to convert the organic semiconductor precursor layer to the organic semiconductor; and a step for removing the organic semiconductor precursor that is not converted to the organic semiconductor are performed in that order.

Abstract: A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state.

Abstract: The present invention provides a film forming method of a uniform semiconductor layer having a large area at a low cost and equipment to form said semiconductor layer, by blowing gas against a coated layer to shorten the drying time and to decrease uneven drying. A film forming method of a semiconductor layer characterized by being provided, after a process to coat a semiconductor material containing a solvent on a substrate, with a process to blow gas against a coated layer of a semiconductor layer containing said solvent to evaporate the solvent.

Abstract: A method of manufacturing an organic thin film transistor characterized by low costs and high performances, the method in which the self-assemble monolayer is formed in a short period of time, and the organic thin film transistor are provided. A method of manufacturing an organic thin film a transistor having a gate electrode, a semiconductor layer, a source electrode, and a drain electrode on a substrate, wherein a semiconductor solution as a mixture of the self-assembled monolayer material and organic semiconductor material is coated between the source electrode and drain electrode, whereby a semiconductor layer is formed.

Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.

Abstract: A method of manufacturing a donor sheet for transferring a transfer layer having a prescribed shape onto a receiving substrate, wherein: a step for forming an organic semiconductor precursor wherein a solution in which the organic semiconductor precursor which converts to an organic semiconductor due to heat, is coated on a substrate sheet; a step for forming a transfer layer of a prescribed shape by heating the organic semiconductor precursor layer in the prescribed shape to convert the organic semiconductor precursor layer to the organic semiconductor; and a step for removing the organic semiconductor precursor that is not converted to the organic semiconductor are performed in that order.

Abstract: A method of manufacturing a thin film including the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between the first discharge electrode and a second discharge electrode; placing a substrate on which a conductive line pattern has been formed on the second discharge electrode; applying the high frequency power from the high frequency power supply while generating plasma by using discharged gas under an atmospheric pressure or a near-atmospheric pressure; and forming a thin film on the substrate, wherein a space ratio (W/L) of a line width W (W>0) of the conductive line pattern to a spatial distance L between the first discharge electrode and the substrate is set not more than 0.1.

Abstract: A method of manufacturing an organic thin film transistor characterized by low costs and high performances, the method in which the self-assemble monolayer is formed in a short period of time, and the organic thin film transistor are provided. A method of manufacturing an organic thin film a transistor having a gate electrode, a semiconductor layer, a source electrode, and a drain electrode on a substrate, wherein a semiconductor solution as a mixture of the self-assembled monolayer material and organic semiconductor material is coated between the source electrode and drain electrode, whereby a semiconductor layer is formed.

Abstract: A liquid crystal display apparatus which have a circular polarizer and a liquid crystal display in a stack. The liquid crystal display has a chilral nematic liquid crystal layer between substrates, and on the mutually opposite sides of the substrates, electrodes and aligning layers are formed. The liquid crystal switches between a planar alignment state and a focal-conic alignment state depending on the voltage applied thereto through the electrodes. In a planar state, light reflected by the electrodes is absorbed by the circular polarizer, and a black display is made. In a focal-conic state, light reflected by the electrodes passes through the circular polarizer, and a white display is made.

Abstract: There is provide a low cost liquid display panel with high image quality, the liquid crystal display in which temperature compensation is unnecessary and image quality is not affected by temperature changes of the surrounding environment. In the active matrix cholesteric liquid crystal display panel, the time Tw for applying voltage to the liquid crystal layer at the time of image writing is set so that the variation ?Vs depending on temperature of the writing voltage which makes the liquid crystal layer to show approximate 50% of the maximum reflectance is less than or equal to a predetermined value within a predetermined temperature range.

Abstract: The present invention provides a film forming method of a uniform semiconductor layer having a large area at a low cost and equipment to form said semiconductor layer, by blowing gas against a coated layer to shorten the drying time and to decrease uneven drying. A film forming method of a semiconductor layer characterized by being provided, after a process to coat a semiconductor material containing a solvent on a substrate, with a process to blow gas against a coated layer of a semiconductor layer containing said solvent to evaporate the solvent.

Abstract: This invention can provide a liquid crystal display unit which can employ any liquid crystal material without being limited by its dielectric constant and initialize liquid crystal layer at low voltages. A liquid crystal display unit comprising pixel electrodes which are disposed in a matrix, common electrode and one of electrodes of supplementary capacitor which is opposite to the pixel electrode, liquid crystal layer containing a memory-type liquid crystal material sandwiched between the pixel electrode and the common electrode, and switching elements which respectively turn on and off voltage to pixel electrodes, wherein the liquid crystal display unit changes the states of liquid crystals to perform image erasing, writing, and displaying operations in sequence while driving the common electrode and one of electrodes of the supplementary capacitor so that the electrodes may have an identical potential.

Abstract: A liquid crystal light modulation element is provided that includes a liquid crystal layer held between a pair of substrates. The liquid crystal layer includes a liquid crystal material that exhibits a cholesteric phase and has a plurality of domains. The liquid crystal layer includes regions where the helical axes of the liquid crystal molecules in a focal conic state extend in regular directions within a plane that is substantially parallel to the surface substrate.

Abstract: A liquid crystal display apparatus which have a circular polarizer and a liquid crystal display in a stack. The liquid crystal display has a chilral nematic liquid crystal layer between substrates, and on the mutually opposite sides of the substrates, electrodes and aligning layers are formed. The liquid crystal switches between a planar alignment state and a focal-conic alignment state depending on the voltage applied thereto through the electrodes. In a planar state, light reflected by the electrodes is absorbed by the circular polarizer, and a black display is made. In a focal-conic state, light reflected by the electrodes passes through the circular polarizer, and a white display is made.

Abstract: A liquid crystal display apparatus having a circular polarizer (composed of a linear polarizer and a retardation film), a scattering layer and a liquid crystal display which are stacked one upon another. The liquid crystal display has a chiral nematic liquid crystal layer between substrates, and electrodes and aligning layers are provided on mutually opposite surfaces of the substrates. The chiral nematic liquid crystal changes between a planar state and a focal-conic state in accordance with a voltage applied thereto through the electrodes. When the liquid crystal is in a planar state, light reflected by the electrode formed on the substrate located farther from an observing side is absorbed in the circular polarizer, and a black display is made. When the liquid crystal is in a focal-conic state, light reflected by the electrode formed on the substrate located farther from the observing side passes through the circular polarizer, and a white display is made.