Abstract: An image reading device includes a reading unit that reads an image on a surface of a medium; and a calibrating unit that is disposed to face the reading unit with the medium disposed therebetween and that calibrates the reading unit. The calibrating unit is supported such that the calibrating unit is movable about a rotating shaft between a closing position at which the calibrating unit faces the reading unit and an opening position at which the calibrating unit is separated from the reading unit. The calibrating unit is positioned with respect to the reading unit when the calibrating unit is moved to the closing position.

Abstract: A raw material fluid treatment plant provided with a raw material reaction apparatus for reacting a raw material fluid to form a reaction gas. The raw material reaction apparatus includes preheaters and a reactor. The preheaters are heat exchangers that perform heat exchange between a second heat transfer medium and the raw material fluid to heat the raw material fluid. The reactor is a heat exchanger that performs heat exchange between a first heat transfer medium differing from the second heat transfer medium and the raw material fluid having been heated by the preheaters to heat and react the raw material fluid.

Abstract: To provide a 4-methyl-1-pentene polymer being excellent in storage stability when dissolved in a solvent and solubility, and being excellent in at least one of heat resistance, and a coating appearance when a coating film is stretched, for example, when such a film is bended or used in a flexible application. A 4-methyl-1-pentene polymer (A) being a copolymer of 4-methyl-1-pentene and at least one selected from linear ?-olefins having 6 to 20 carbon atoms, the 4-methyl-1-pentene polymer (A) satisfying the following requirements (I) and (II): (I) an endotherm end temperature (TmE) in a melting (endothermic) curve measured by DSC is 230° C. or lower; and (II) an exotherm start temperature (TcS) in a crystallization (exothermic) curve measured by DSC is 210° C. or lower.

Abstract: The present invention provides a resin composition including a 4-methyl-1-pentene copolymer (A) that satisfies particular requirements and a 4-methyl-1-pentene copolymer (B) that satisfies particular requirements. The resin composition of the present invention can provide a smooth film with a small surface roughness and can be suitably used for molded articles such as films for capacitors, while containing the 4-methyl-1-pentene copolymers and having properties such as heat resistance. A film for capacitors of the present invention has a small surface roughness and is smooth, which eliminates problems such as worsening of dielectric properties and shortening of service life.

Abstract: A 4-methyl-1-pentene polymer particle (X) which satisfies the following requirements (X-a), (X-b) and (X-c): (X-a) being composed of a 4-methyl-1-pentene polymer which has a content of a constitutional unit derived from 4-methyl-1-pentene being 30.0 to 99.7% by mol, and a content of a constitutional unit derived from at least one olefin selected from ethylene and an ?-olefin having 3 to 20 carbon atoms (except for 4-methyl-1-pentene) being 0.3 to 70.0% by mol; (X-b) having, when measured in a cross fractionation chromatograph apparatus (CFC) using an infrared spectrophotometer as a detector part, at least one peak A of an amount of a component eluted present in the range of 100 to 140° C., and at least one peak B of an amount of a component eluted present at lower than 100° C.; and (X-c) having a meso diad fraction (m) measured by 13C-NMR falling within the range of 95.0 to 100%.

Abstract: A 4-methyl-1-pentene polymer having: a unit derived from 4-methyl-1-pentene of 90 to 100% by mol; a unit selected from ethylene and an ?-olefin, other than 4-methyl-1-pentene, having 3 to 20 carbon atoms of 0 to 10% by mol; and the polymer satisfying the following requirements: (a) a meso diad fraction measured by 13C-NMR within the range of 98 to 100%; (b) a ratio of Z-average molecular weight Mz to weight-average molecular weight Mw measured by GPC within the range of 2.5 to 20; (c) a ratio of weight-average molecular weight Mw to number-average molecular weight Mn measured by GPC within the range of 3.6 to 30; (d) a melt flow rate measured under conditions of 260° C. and a 5 kg load (ASTM D1238) within the range of 0.1 to 500 g/10 min; and (e) an amount of a decane-soluble portion at 23° C. is 5.0% by mass or less.

Abstract: A resin composition including a 4-methyl-1-pentene copolymer (A) that satisfies particular requirements and a 4-methyl-1-pentene copolymer (B) that satisfies particular requirements, in which the content of the copolymer (A) is 10 to 95 parts by mass and the content of the copolymer (B) is 90 to 5 parts by mass with respect to 100 parts by mass of the total content of the copolymers (A) and (B).

Abstract: A thin film transistor according to an embodiment of the present invention includes: a gate electrode supported by a substrate; a gate insulating layer covering the gate electrode; a silicon semiconductor layer being provided on the gate insulating layer and having a crystalline silicon region, the crystalline silicon region including a first region, a second region, and a channel region located between the first region and the second region, such that the channel region, the first region, and the second region overlap the gate electrode via the gate insulating layer; an insulating protection layer disposed on the silicon semiconductor layer so as to cover the channel region and allow the first region and the second region to be exposed; a source electrode electrically connected to the first region; and a drain electrode electrically connected to the second region. The channel region is lower in crystallinity than the first region and the second region.

Abstract: The disclosure relates to polymer-containing composite materials and to unusually low-pressure consolidation methods for forming composite parts from such materials. More specifically, for example, the disclosure relates to use of a certain “PEEK-PEDEK” copolymer in low-pressure consolidation methods, using as little as 1 bar pressure (or using atmospheric pressure acting on a consolidation that is held under vacuum) to provide composite parts that are substantially void-free.

Abstract: A 4-methyl-1-pentene polymer (X) wherein a content of a constitutional unit derived from 4-methyl-1-pentene is 90 to 100% by mol; a content of a constitutional unit derived from at least one olefin selected from ethylene and an ?-olefin, other than 4-methyl-1-pentene, having 3 to 20 carbon atoms is 0 to 10% by mol; and the 4-methyl-1-pentene polymer satisfies certain requirements (a) to (f): (a) a meso diad fraction (m) measured by 13C-NMR falling within a certain range; (b) a ratio of weight-average molecular weight Mw within a certain range; (c) a melt flow rate (MFR) within a certain range; (d) a cumulative weight fraction within a certain range; (e) a proportion of a polymer having a molecular weight of a certain range; and (f) a heat of fusion and a melting point of the 4-methyl-1-pentene polymer within certain ranges.

Abstract: A 4-methyl-1-pentene polymer (X) wherein a content of a constitutional unit derived from 4-methyl-1-pentene is 90 to 100% by mol; a content of a constitutional unit derived from at least one olefin selected from ethylene and an ?-olefin, other than 4-methyl-1-pentene, having 3 to 20 carbon atoms is 0 to 10% by mol; and the 4-methyl-1-pentene polymer satisfies certain requirements (a) to (f): (a) a meso diad fraction (m) measured by 13C-NMR falling within a certain range; (b) a ratio of weight-average molecular weight Mw within a certain range; (c) a melt flow rate (MFR) within a certain range; (d) a cumulative weight fraction within a certain range; (e) a proportion of a polymer having a molecular weight of a certain range; and (f) a heat of fusion and a melting point of the 4-methyl-1-pentene polymer within certain ranges.

Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.

Abstract: A 4-methyl-1-pentene polymer particle (X) which satisfies the following requirements (X-a), (X-b) and (X-c): (X-a) being composed of a 4-methyl-1-pentene polymer which has a content of a constitutional unit derived from 4-methyl-1-pentene being 30.0 to 99.7% by mol, and a content of a constitutional unit derived from at least one olefin selected from ethylene and an ?-olefin having 3 to 20 carbon atoms (except for 4-methyl-1-pentene) being 0.3 to 70.0% by mol; (X-b) having, when measured in a cross fractionation chromatograph apparatus (CFC) using an infrared spectrophotometer as a detector part, at least one peak A of an amount of a component eluted present in the range of 100 to 140° C., and at least one peak B of an amount of a component eluted present at lower than 100° C.; and (X-c) having a meso diad fraction (m) measured by 13C-NMR falling within the range of 95.0 to 100%.

Abstract: A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.

Abstract: A polyester sheet including a polyester (A), a 4-methyl-1-pentene polymer (B) having a specific heat of fusion and a meso diad fraction (m) of 98.5 to 100%, and a compatibilizing agent (C), wherein content proportions of the (A), (B), and (C) are 60 to 98.9 parts by mass for (A), 1 to 25 parts by mass for (B), and 0.1 to 15 parts by mass for (C), when a total content of (A), (B), and (C) is set as 100 parts by mass, and wherein (B) satisfies the requirements (a) to (d) described herein.

Abstract: A polyester sheet including a polyester (A), a 4-methyl-1-pentene polymer (B) having a specific heat of fusion and a meso diad fraction (m) of 98.5 to 100%, and a compatibilizing agent (C), wherein content proportions of the (A), (B), and (C) are 60 to 98.9 parts by mass for (A), 1 to 25 parts by mass for (B), and 0.1 to 15 parts by mass for (C), when a total content of (A), (B), and (C) is set as 100 parts by mass, and wherein (B) satisfies the requirements (a) to (d) described herein.

Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.

Abstract: A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step BF of selectively irradiating a portion of the amorphous semiconductor film with laser light. Step B includes a step of simultaneously forming, in said portion, a first melted region that is elongated in a first direction and a second direction that is elongated in a second melted region different from the first direction.

Abstract: A thin film transistor according to an embodiment of the present invention includes: a gate electrode supported by a substrate; a gate insulating layer covering the gate electrode; a silicon semiconductor layer being provided on the gate insulating layer and having a crystalline silicon region, the crystalline silicon region including a first region, a second region, and a channel region located between the first region and the second region, such that the channel region, the first region, and the second region overlap the gate electrode via the gate insulating layer; an insulating protection layer disposed on the silicon semiconductor layer so as to cover the channel region and allow the first region and the second region to be exposed; a source electrode electrically connected to the first region; and a drain electrode electrically connected to the second region. The channel region is lower in crystallinity than the first region and the second region.

Abstract: A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.