Abstract: In an image processing device, a controller performs: acquiring target image data representing a target image; inputting first and second datasets into a machine learning model and causing the machine learning model to output first and second partial dot data; and generating dot data specifying a dot formation state for each of a plurality of pixels in a print image corresponding to the target image using the first and second partial dot data. The first dataset includes first partial image data and a first value for an input parameter. The second dataset includes second partial image data and a second value for the input parameter. The machine learning model outputs the second partial dot data different from the first partial dot data according to the second value being different from the first value even when the second partial image data is identical to the first partial image data.

Abstract: A ceramic complex that has improved optical characteristics including luminous efficiency is provided. A method for producing a ceramic complex, including: preparing a molded body containing rare earth aluminum garnet fluorescent material, aluminum oxide, and lutetium oxide, and having a content of the rare earth aluminum garnet fluorescent material in a range of 15% by mass or more and 50% by mass or less, and a content of the lutetium oxide in a range of 0.2% by mass or more and 4.5% by mass or less, based on the total amount of the rare earth aluminum garnet fluorescent material, the aluminum oxide, and the lutetium oxide; and calcining the molded body in an air atmosphere to provide a ceramic complex having a relative density in a range of 90% or more and less than 100%.

Abstract: A heat exchanger includes a tube expansion portion formed by expanding a heat transfer tube so that an outer peripheral surface of the heat transfer tube is pressed against an inner peripheral surface of a hole provided in a side wall portion of a case. The tube expansion portion includes first and second bulge portions positioned respectively on the inside and the outside of the side wall portion so as to sandwich the side wall portion in an axial length direction of the heat transfer tube and configured such that respective outer peripheral surfaces thereof partially bulge outward in a radial direction of the heat transfer tube, an end portion tip end of the heat transfer tube is positioned apart from the second bulge portion, and the end portion tip end and a part in the vicinity thereof are expanded so as to be included in a part of the tube expansion portion.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory string including first and second select transistors and memory cell transistors; a bit line connected to the first select transistor; word lines which are connected to gates of the memory cell transistors, respectively; first and second select gate lines which are connected to gates of the first and second select transistors, respectively; a first contact plug connected to the first select gate line; a first wiring layer provided on the first contact plug; a second contact plug connected to the second select gate line; a second wiring layer provided on the second contact plug; and a row decoder connected to the first and second wiring layers. The row decoder applies different voltages to the first select gate line and the second select gate line.

Abstract: An example semiconductor device includes: n conductive layers including first to nth conductive layers stacked in a first direction; a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type closer to the nth conductive layer than the first semiconductor region; a semiconductor layer provided between the first semiconductor region and the second semiconductor region, extending in the first direction, penetrating the n conductive layers, and having an impurity concentration lower than a first conductive impurity concentration of the first region and a second conductive impurity concentration of the second region; n charge storage regions including first to nth charge storage regions provided between the n conductive layers and the semiconductor layer, and a control circuit that controls a voltage applied to the n conductive layers to always prevent charges from being stored in at least one of the n charge storage regions.

Abstract: A semiconductor memory device includes first conductive layers stacked and second conductive layers stacked in a first direction. The second conductive layers spaced from the first conductive layers in a second direction intersecting the first direction. A first memory pillar is between the first conductive layers and the second conductive layers in the second direction. The first memory pillar extends in the first direction and has a first length in the second direction. A second memory pillar is between the first conductive layers and the second conductive layers in the second direction. The second memory pillar is adjacent to the first memory pillar. The second memory pillar extends in the first direction and has a second length greater than the first length in the second direction.

Abstract: A heat exchanger includes a heat transfer tube in which a plurality of tube body portions are arranged in a two-tier staggered pattern in a flow direction of heating gas, and a fin, wherein a plurality of cut-out recessed portions are provided in the fin by cutting out sites between first and second upstream side tube body portions, and each cut-out recessed portion extends toward a downstream side in the flow direction of the heating gas beyond the site between the first and second upstream side tube body portions so as to cross straight lines linking a center of a first downstream side tube body portion, which is positioned between the first and second upstream side tube body portions in the width direction, and respective centers of the first and second upstream side tube body portions. Thus, the temperature distribution of the fin is made even, thereby suppressing the generation of thermal stress, and as a result, distortion of the heat transfer tube is suppressed.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory string including first and second select transistors and memory cell transistors; a bit line connected to the first select transistor; word lines which are connected to gates of the memory cell transistors, respectively; first and second select gate lines which are connected to gates of the first and second select transistors, respectively; a first contact plug connected to the first select gate line; a first wiring layer provided on the first contact plug; a second contact plug connected to the second select gate line; a second wiring layer provided on the second contact plug; and a row decoder connected to the first and second wiring layers. The row decoder applies different voltages to the first select gate line and the second select gate line.

Abstract: Provided is a ceramic complex having high luminous characteristics. Proposed is a ceramic complex including a rare earth aluminate fluorescent material, glass, and calcium fluoride, wherein, when the total amount of the rare earth aluminate fluorescent material, the glass, and the calcium fluoride is taken as 100% by volume, the content of the rare earth aluminate fluorescent material is in a range of 15% by volume or more and 60% by volume or less, the content of the glass is in a range of 3% by volume or more and 84% by volume or less, and the content of the calcium fluoride is in a range of 1% by volume or more and 60% by volume of less.

Abstract: A heat exchanger includes a second heat transfer tube disposed in a case on the upstream side of a first heat transfer tube and a plurality of fins in a heating gas flow direction and provided in contact with the inner surface of a side wall portion of the case, and a heat shield member. The heat shield member includes a tube cover portion that covers an outer peripheral surface inside portion of a part of the second heat transfer tube near the plurality of fins, and a first extension portion that extends from the tube cover portion toward the plurality of fins so as to close at least a part of a first gap formed between the second heat transfer tube and the plurality of fins. Thus, a problem whereby the second heat transfer tube corrodes easily can be eliminated, and the thermal efficiency of the heat exchanger can be improved.

Abstract: A semiconductor memory device includes a semiconductor substrate, a pillar disposed above the semiconductor substrate and extending in a first direction crossing a principal surface of the semiconductor substrate, a plurality of first memory cells arranged on a first side surface of the pillar along the first direction, and a plurality of second memory cells arranged on a second side surface of the pillar along the first direction. The memory device further includes a plurality of first control gate layers respectively connected to the first memory cells, a plurality of second control gate layers respectively connected to the second memory cells, and a stacked film disposed between one of the first control gate layers and one of the second control gate layers, the stacked film including a first insulating layer, a second insulating layer, and an electron capture layer disposed between the first insulating layer and the second insulating layer.

Abstract: A latent heat recovery heat exchanger includes a case, a heat exchange portion, and a straightening vane. The heat exchange portion includes a plurality of heat transfer plates surrounded by a peripheral wall portion of the case and layered on one another, each of the plurality of heat transfer plates extending in a direction from an inlet toward an outlet. The straightening vane includes a top plate portion covering the plurality of heat transfer plates so as to close a space between the plurality of heat transfer plates in end portions of the plurality of heat transfer plates in a direction intersecting with a direction of layering of the plurality of heat transfer plates when the heat exchange portion is viewed from the inlet toward the outlet.

Abstract: A data processing device according to an embodiment includes a sub-vector group generating unit, a codebook generating unit, and a converting unit. The sub-vector group generating unit generates, from a feature vector set of N number of D-dimensional feature vectors, M number of sub-vector groups (where M<D holds true). Each of the M number of sub-vector groups includes N number of dimension-variable sub-vectors obtained from the N number of D-dimensional feature vectors. For each of the M number of sub-vector groups, the codebook generating unit performs clustering of the N number of dimension-variable sub-vectors, and generates a codebook in which the representative vector of each cluster is associated with an index. The converting unit performs product quantization using the codebook and converts each of the N number of D-dimensional feature vectors into a compressed code made of a combination of M number of indexes.

Abstract: The heat exchange device (200) includes a primary heat exchanger (10), a secondary heat exchanger (20), and a connecting pipe (60). The connecting pipe connects the primary heat exchanger and the secondary heat exchanger. The primary heat exchanger (10) includes a primary heat exchange part (11), a shell plate (12) surrounding the primary heat exchange part, and a body pipe part (13) for cooling the shell plate. The body pipe part (13) is disposed closer to a burner than the primary heat exchange part (11) and is connected to the connecting pipe (60). The primary heat exchange part (11) includes a first heat transfer tube part (111) connected to the body pipe part (13), and a second heat transfer tube part (112) connected to the first heat transfer tube part and disposed on a side opposite to the body pipe part with respect to the first heat transfer tube part.

Abstract: A latent heat recovery heat exchanger includes a heat exchange portion and a case. The heat exchange portion includes a plurality of heat transfer plates layered on one another. The case accommodates the plurality of heat transfer plates of the heat exchange portion. The heat exchange portion includes a front plate portion provided as an outermost layer of the heat exchange portion. The front plate portion of the heat exchange portion forms a part of the case.

Abstract: The heat exchange device includes a primary heat exchanger and a secondary heat exchanger. The secondary heat exchanger is disposed to overlap the primary heat exchanger in a vertical direction in a state in which the heat exchange device is installed. The secondary heat exchanger includes a plurality of first pipes and a plurality of second pipes. Each of the plurality of first pipes and the plurality of second pipes extends in a zigzag manner in the vertical direction by a plurality of linear portions being connected to a plurality of curved portions in series. Each of the plurality of linear portions of each of the plurality of second pipes is disposed to be displaced from each of the plurality of linear portions of each of the plurality of first pipes in the vertical direction.

Abstract: A laser additive manufacturing apparatus and a method thereof are provided. The apparatus includes an irradiation unit that irradiates an irradiation region with a laser beam having a light intensity distribution converted by a diffractive optical element, a head having a material supplying unit for supplying powder material to the irradiation region, and a movement mechanism which relatively moves the head and a workpiece. In the irradiation region, irradiation light forms a substantially circular spot having a light intensity distribution in which light intensity in an outer peripheral portion is higher than light intensity in a central portion, and the central portion has predetermined light intensity, and the material supplying unit supplies the powder material to the substantially circular spot.

Abstract: Provided are a heat exchanger capable of cooling a shell plate and having good assemblability and a hot water apparatus having the same. A primary heat exchanger includes a heat exchanging portion, a shell plate, and a shell pipe portion. The shell plate surrounds the heat exchanging portion. The shell pipe portion is for cooling the shell plate. The shell plate includes a front surface portion and a main body portion. The main body portion is installed on the front surface portion and is formed by bending one sheet of plate into a U shape. The shell pipe portion is bent in a U shape along an inner surface of the main body portion and installed on the inner surface.

Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory string including first and second select transistors and memory cell transistors; a bit line connected to the first select transistor; word lines which are connected to gates of the memory cell transistors, respectively; first and second select gate lines which are connected to gates of the first and second select transistors, respectively; a first contact plug connected to the first select gate line; a first wiring layer provided on the first contact plug; a second contact plug connected to the second select gate line; a second wiring layer provided on the second contact plug; and a row decoder connected to the first and second wiring layers. The row decoder applies different voltages to the first select gate line and the second select gate line.