Abstract: A photoelectric conversion apparatus includes a photoelectric conversion substrate having photoelectric conversion units and a microlens array arranged above the conversion units, a light transmissive plate, a first member arranged between the photoelectric conversion substrate and the light transmissive plate, and that bonds the photoelectric conversion substrate and the light transmissive plate, and a second member arranged between the first member and the microlens array. The second member has at least one of a refractive index lower than the microlens array or a porosity higher than the microlens array. A surface on a side of the photoelectric conversion substrate of the first member has a plurality of steps from a portion over the plurality of photoelectric conversion units to a side surface of the photoelectric conversion apparatus.

Abstract: A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Abstract: The present invention provides a light-emitting device including a substrate, a first EL element, and a second EL element, the first EL element and the second EL element each including a lower electrode, an organic compound layer including a light-emitting layer, an upper electrode, and a color filter in this order from the substrate, and an insulating layer that covers an end portion of the lower electrode. A first color filter of the first EL element and a second color filter of the second EL element overlap each other when viewed in plan in an overlapping region, and an inclined portion closest to the first EL element among inclined portions of the insulating layer of the second EL element and the overlapping region overlap each other when viewed in plan.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

Abstract: An image measuring apparatus according to an embodiment of the present invention comprises: an imaging device that images a workpiece to acquire an image of this workpiece; and a processing device that performs measurement of the workpiece based on this image and outputs a measurement result. Moreover, the processing device sets a region in the image, sets a plurality of first points along a contour line of this region, sequentially moves these plurality of first points so that the plurality of first points approximate to the contour line included in the image, acquires the moved plurality of first points as a plurality of second points, and calculates the measurement result based on these plurality of second points.

Abstract: A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.

Abstract: An image measuring apparatus according to an embodiment of the present invention comprises: an imaging device that images a workpiece to acquire an image of this workpiece; and a processing device that performs measurement of the workpiece based on this image and outputs a measurement result. Moreover, the processing device, based on the above-described image, generates another image whose number-of-pixels is smaller than that of the image, sets a plurality of regions based on this another image, and calculates the above-described measurement result based on these plurality of regions.

Abstract: A photoelectric conversion apparatus has a photoelectric conversion substrate having a plurality of photoelectric conversion portions and a microlens array arranged above the plurality of photoelectric conversion portions; a light transmissive plate; a first member arranged between the photoelectric conversion substrate and the light transmissive plate; a second member arranged between the first member and the microlens array; and a third member arranged between the first member and the second member. A porosity of the first member<a porosity of the third member<a porosity of the second member is satisfied.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion substrate having photoelectric conversion units and a microlens array arranged above the conversion units, a light transmissive plate, a first member arranged between the photoelectric conversion substrate and the light transmissive plate, and that bonds the photoelectric conversion substrate and the light transmissive plate, and a second member arranged between the first member and the microlens array. The second member has at least one of a refractive index lower than the microlens array or a porosity higher than the microlens array. A surface on a side of the photoelectric conversion substrate of the first member has a plurality of steps from a portion over the plurality of photoelectric conversion units to a side surface of the photoelectric conversion apparatus.

Abstract: A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

Abstract: A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Abstract: A press brake has a lower table arranged at lower part of left and right side frames, an upper table arranged at upper part of the side frames and facing the lower table, one of the upper and lower tables serving as a ram to be moved vertically, and left and right vertical driving units arranged on the side frames, respectively, to move the ram vertically. Strain detecting sensors are arranged on inner and outer side faces, respectively, of each of the left and right side frames, to detect strain of the side frames in such a way as to cancel horizontal deflection of the side frames and detect vertical deflection thereof.

Abstract: An image measuring apparatus according to an embodiment of the present invention comprises: an imaging device that images a workpiece to acquire an image of this workpiece; and a processing device that performs measurement of the workpiece based on this image and outputs a measurement result. Moreover, the processing device sets a region in the image, sets a plurality of first points along a contour line of this region, sequentially moves these plurality of first points so that the plurality of first points approximate to the contour line included in the image, acquires the moved plurality of first points as a plurality of second points, and calculates the measurement result based on these plurality of second points.

Abstract: An image measuring apparatus according to an embodiment of the present invention comprises: an imaging device that images a workpiece to acquire an image of this workpiece; and a processing device that performs measurement of the workpiece based on this image and outputs a measurement result. Moreover, the processing device, based on the above-described image, generates another image whose number-of-pixels is smaller than that of the image, sets a plurality of regions based on this another image, and calculates the above-described measurement result based on these plurality of regions.

Abstract: A method of manufacturing a photoelectric conversion element including a step of forming a layer containing an organic material and particles dispersed in the organic material on a member including a photoelectric conversion portion and a step of roughening a surface of the layer by dry etching.

Abstract: A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Abstract: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

Abstract: A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

Abstract: A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating.

Abstract: A microlens forming method, comprising etching a first member and a second member arranged on the first member, the second member including a concavo-convex shape, and forming a microlens from the first member, wherein, the etching of the first and the second members is performed under a condition that an etching rate of the first member is higher than that of the second member, a portion of the first member under the concave portion is exposed during the etching of the second member, and the exposed portion of the first member is removed in the etching of the first member.