Abstract: A method of generating photomask data for fabricating a microlens array, the photomask having a microlens pattern including light-shielding portions and non-light-shielding portions, in each rectangular region including a surrounding region having four sides of the rectangular region as outer edges and a primary region having boundaries that are inner edges of the surrounding region, the surrounding region being configured by four strip regions each including one of the four sides as its part, and a width between the outer edge and the inner edge being not more than 1/2 of a wavelength of exposure light, includes determining a layout of light-shielding portions and non-light-shielding portions in the surrounding region so that a density of light-shielding portions is set to fall within a range from 0% to 15%.

Abstract: A method of generating mask pattern data of a photomask used to form microlenses divides a pattern formation surface of a mask pattern to be used for the photomask into a plurality of grid cells, acquires data that represent a transmitted light distribution of the mask pattern to be used for the photomask, determines whether to place a shield on each of the plurality of grid cells by binarizing the plurality of grid cells in order of increasing or decreasing distance from a center of the pattern formation surface using an error diffusion method, to acquire the transmitted light distribution, and generates mask pattern data that represent an arrangement of the shields, based on the determination.

Abstract: A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.

Abstract: An image processing measuring apparatus includes an illuminator that has a red LED, a green LED, and a blue LED; a controller that can independently control illumination intensity of each light source; a color image separator that separates the reflected lights from the measured object into a red light, a green light, and a blue light, respectively converts the lights into a red light image signal, a green light image signal, and a blue light image signal based on each light, and outputs the signals; and an image processor that performs a grayscale image process with respect to one image signal having the same color as that of the radiated light among image signals obtained from the color image separator, when one of the lights from the red LED, the green LED, or the blue LED is radiated onto the measured object.

Abstract: An apparatus for reviewing defects of a semiconductor device is provided to review a lot of defects in a short period of time thereby to improve the efficiency of defect review. A method for reviewing defects of a semiconductor device includes obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.

Abstract: A photoelectric conversion device comprises a semiconductor substrate; a multilayer wiring structure; a first color filter layer including a plurality of first color filters which are arranged above a first photoelectric conversion units to allow light of a first color to enter the first photoelectric conversion units, each first color filter being connected to an adjacent first color filter; and a second color filter layer including a plurality of second color filters which are arranged above a second photoelectric conversion units to allow light of a second color to enter the second photoelectric conversion units, wherein the multilayer wiring structure including an uppermost wiring layer which defines the aperture regions corresponding to the respective photoelectric conversion units, and an insulation film arranged to cover the uppermost wiring layer, and wherein the first color filter layer and the second color filter layer are arranged to cover the insulation film.

Abstract: In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.

Abstract: An image processing apparatus which uses morphology is provided. A masked image is provided to a morphological processing section of the image processing apparatus. The morphological processing section calculates the opening gap of the masked image, calculates the minimum number N of iterations of dilations required for filling the opening gap and, after performing N dilations, executes N erosions to remove a mesh pattern. Then, an edge detecting section detects the edges of a wiring pattern in the image and a measuring section calculates the distance between the edges, which is the width of the wiring.

Abstract: A method for generating mask pattern data of a photomask used to form microlenses divides a pattern formation surface of a mask pattern to be used for the photomask into a plurality of grid cells, acquires data which represents transmitted light distribution of the mask pattern to be used for the photomask, determines whether to place a shield on each of the plurality of grid cells by binarizing the plurality of grid cells in order of increasing or decreasing distance from a center of the pattern formation surface using an error diffusion method to acquire the transmitted light distribution, and generates mask pattern data which represents an arrangement of the shields based on results from the determining step.

Abstract: The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

Abstract: In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.

Abstract: In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.

Abstract: The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

Abstract: A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.

Abstract: A controller for a wire electric discharge machine which can achieve stable machining with high surface accuracy without requiring adjustment of a gain or the like in wire-electrode feed control. A discharge gap detection unit detects a voltage between a wire electrode and a workpiece. An amount-of-machining-per-unit-distance change detection unit obtains an average machining voltage, and a voltage drop EX that is a difference between the obtained average machining voltage and a no-load voltage. A comparative determination unit obtains a ratio ES/EX between a reference voltage drop ES stored in a reference-amount-of-machining-per-unit-distance relative value storage unit and the drop voltage EX. A feed pulse arithmetic unit obtains a feed speed that makes the amount of machining per unit time constant, on the basis of the ratio ES/EX and a predetermined feed speed, and distributes feed pulses to motors to thereby move the wire electrode relatively to the workpiece.

Abstract: In an automatic defect classifying method, defects not reviewed are assigned with defect classes having the same definitions as those of reviewed defects in order to effectively use information on defects not reviewed, the defects not reviewed occupying most of defects on a wafer. Defects not reviewed are assigned defect classes having the same definitions, by using defect data of defects detected with an inspection equipment and defect classes of already reviewed defects given by ADC of a review equipment. Since all defects are assigned the defect classes having the same definitions, more detailed analysis is possible in estimating the generation reasons of defects.

Abstract: A discharge pulse number generated between a wire electrode and a workpiece is counted every predetermined time. A ratio Px/Ps of this counted value Px to the reference pulse number Ps will be determined to control an amount of coolant in response to this ratio Px/Ps. Also, in response to this ratio Px/Ps, an amount of movement within predetermined time is controlled. Further, through the ratio Px/Ps and the like, quiescent time to be controlled by the detection voltage generator is controlled. Thereby, surplus supply of energy is prevented, the machining speed and machining precision is improved and any disconnection of the wire electrode is avoided.

Abstract: An information recording apparatus is provided with: a reserving device for specifying a channel, a recording start time point, and a recording end time point of a regular broadcast program which is regularly broadcasted (i.e.

Abstract: A data-related information acquiring device acquires data related information having a distribution information. The distribution is related to the distribution of data. A data identification device identifies first data of which first distribution time extends or contracts on the basis of the data related information and second data of which second distribution time is changed by the extension or contraction of the first distribution time of the first data. A distribution-state display controlling device controls display information, which suggests a change in each of the distribution times in addition to the distribution information of the first data and the second data.

Abstract: A CPU 290 of a recording/reproducing device 200 make a recording section 251 record contents reserved by a user for video recording in an HDD 270, and sets remaining time until the contents is automatically deleted. The CPU 290 determines, when a period T is over, whether access to the contents has been carried out or not, and adds additional time D to the remaining time when the CPU 290 determines that the access has been made, and subtracts the period T from the remaining time when the CPU 290 determines that the access has not been made. The CPU 290 executes the afore-mentioned processing once in each period T, and automatically deletes the contents from the HDD 270 when the CPU 290 recognizes that the remaining time is zero or below.