Abstract: Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.

Abstract: A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.

Abstract: In a barcode reader, a sensor controller sets time of one frame of a line image sensor based on output time necessary for data output of one frame from the line image sensor and lighting time of an LED. A light source controller performs first lighting control to turn on the LED only for the lighting time after termination of the data output within the time of one frame, and second lighting control to turn on the LED only for the lighting time so as to include the entire period of the data output within the time of one frame.

Abstract: An information processing apparatus includes: an information storage that stores information; a request accepting section that accepts a predetermined request for the information; a setting section that, for each of the information, sets whether the predetermined request is allowed; a setting storage that stores a setting by the setting section; a determining section that, with respect to the information corresponding to a request accepted by the request accepting section, reads out a corresponding setting from the setting storage, and that determines allowance/non-allowance of the predetermined request; and a process executing section that, in a case where the determining section determines allowance of the predetermined request, executes a process corresponding to the predetermined request on the information.

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract: Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.

Abstract: An information processing apparatus includes: an information storage that stores information; a request accepting section that accepts a predetermined request for the information; a setting section that, for each of the information, sets whether the predetermined request is allowed; a setting storage that stores a setting by the setting section; a determining section that, with respect to the information corresponding to a request accepted by the request accepting section, reads out a corresponding setting from the setting storage, and that determines allowance/non-allowance of the predetermined request; and a process executing section that, in a case where the determining section determines allowance of the predetermined request, executes a process corresponding to the predetermined request on the information.

Abstract: There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.

Abstract: An electron beam exposure method includes the steps of: preparing an exposure mask having a plurality of opening patterns formed by dividing a drawing object pattern into exposable regions; and drawing the drawing object pattern by performing exposure with an electron beam passing through the opening patterns of the exposure mask. Each end portion serving as a joint in each opening pattern of the exposure mask is provided with a joining portion tapered in a width of the opening pattern. The exposure is performed in such a way that portions drawn through adjacent joining portions overlap each other.

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract: There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.

Abstract: An image forming device includes an image forming section, a connection section, a request receiving section, an illegality detection section, a notice section and a web page creation section. The image forming section performs image formation on a medium. The connection section communicates with an information processing device. The request receiving section receives a request from the information processing device through the connection section. The illegality detection section detects an illegal access to the request receiving section through the connection section. The notice section notifies, to the information processing device, a detection result by the illegality detection section through the connection section.

Abstract: A silicone oxide film forming method includes forming a silicon oxide film on a plurality of target objects by supplying a chlorine atom-containing silicon source into a reaction chamber accommodating the plurality of target objects. Forming the silicon oxide film includes making an interior of the reaction chamber be under a hydrogen atmosphere by supplying a hydrogen gas into the reaction chamber.

Abstract: A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.

Abstract: In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S41 and S44). Then, correction parameters are obtained, which allow a relationship between exposure intensity and a line width for a correction target column cell to coincide with a relationship between exposure intensity and a line width for a reference column cell selected from among the plurality of column cells (Steps S43 and S46). Thereafter, exposure time of each column cell is obtained by correcting the exposure time of the reference column cell based on the correction parameters thus obtained.

Abstract: An information processing apparatus includes: a connecting section; an information storage; a request accepting section; a searching section; a setting information storage; a determining section; and a process executing section.

Abstract: An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity.

Abstract: In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S41 and S44). Then, correction parameters are obtained, which allow a relationship between exposure intensity and a line width for a correction target column cell to coincide with a relationship between exposure intensity and a line width for a reference column cell selected from among the plurality of column cells (Steps S43 and S46). Thereafter, exposure time of each column cell is obtained by correcting the exposure time of the reference column cell based on the correction parameters thus obtained.

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.