Abstract: A device processing history storage system in which a device and a terminal are connected through a network, in which the terminal includes: a request portion which transmits to the device a request for device processing or a request for storage of a history of the device processing; a history request portion which requests the device for the history; and a history display portion which displays the history received from the device, and the device includes: a device processing portion which performs the device processing; a history generation portion which generates a history of the device processing performed by the device processing portion; a history storage portion which stores the history generated by the history generation portion; and a history transmission portion which transmits to the terminal the history which is stored in the history storage portion.

Abstract: A device for performing a processing in response to a request received from a requester, comprises a receiving unit that receives the request or authentication information from the requestor; a processing unit that performs processing according to the request received by the receiving unit; a job history memory that stores a history of job performed by the processing unit; and a job history display controller that controls a display of a job history list in response to the request from the requestor, wherein the job history display controller restricts a display of a history of job which has been performed in response to a request from other requestor than the first-mentioned requestor and belongs to the other requester.

Abstract: A device that performs processing upon receiving a request from a terminal, which includes: a processing information storage unit that stores information relating to the processing; a processing history generating unit that generates a history of the processing based on the information relating to the processing stored in the processing information storage unit; a processing history transmitting unit that transmits the history of the processing generated by the processing history generating unit to the terminal; and a restriction setting unit that sets restriction on the history of the processing, in which the processing history generating unit generates the history of the processing according to the restriction set by the restriction setting unit.

Abstract: A charged particle beam photolithography machine includes an electron gun, a deflector, a wafer stage, a standard substrate formed with a chip-shaped first mark group having a plurality of first marks and a chip-shaped second mark group having a plurality of second marks, a correction map having misalignment factors of the first marks based on positions of the second marks, and a deflection control unit for controlling an amount of deflection in the deflector. The charged particle is irradiated on a wafer while the deflection control unit makes reference to the correction map and corrects the amount of deflection as equivalent to the misalignment factors.

Abstract: An electron-beam exposure system includes: density-per-area map generating means configured to divide a certain area on which an electron beam is irradiated into meshes, to figure out a ratio of an area of patterns to be irradiated on each divided region to an area of the divided region, thus to generate a density-per-area map; and proximity-effect correcting means configured to correct exposure of the electron beam by referring to the density-per-area map.

Abstract: A charged particle beam photolithography machine includes an electron gun, a deflector, a wafer stage, a standard substrate formed with a chip-shaped first mark group having a plurality of first marks and a chip-shaped second mark group having a plurality of second marks, a correction map having misalignment factors of the first marks based on positions of the second marks, and a deflection control unit for controlling an amount of deflection in the deflector. The charged particle is irradiated on a wafer while the deflection control unit makes reference to the correction map and corrects the amount of deflection as equivalent to the misalignment factors.

Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

Abstract: 1. A fluororesin tube in which the machine direction shrinkage rate is 1 to 8% and the transverse direction shrinkage rate is 2 to 8%, upon heating to 150° C. 2. A fluororesin tube in which the machine direction expansion rate is 0.5 to 4% and the transverse direction shrinkage rate is 1 to 6%, upon heating to 150° C. 3. A fluororesin tube in which the machine direction shrinkage rate is 1 to 8% and the transverse direction expansion rate is 1 to 4%, upon heating to 150° C.

Abstract: An exposure method for exposing a wafer having magnetic material by using an electron beam, includes: placing the wafer on a wafer stage; calculating a correction value that corrects a deflection amount by a deflector that deflects the electron beam, based on an irradiation position on the wafer, on which the electron beam is to be incident, and a magnetic field formed by the magnetic material; and deflecting the electron beam based on the correction value to expose the wafer.

Abstract: An exposure method for exposing a wafer having magnetic material by using an electron beam, includes: placing the wafer on a wafer stage; calculating a correction value that corrects a deflection amount by a deflector that deflects the electron beam, based on an irradiation position on the wafer, on which the electron beam is to be incident, and a magnetic field formed by the magnetic material; and deflecting the electron beam based on the correction value to expose the wafer.

Abstract: An electron beam exposure apparatus, enabling detection of the height of a sample simply and with a high accuracy, including an electron gun, a converging unit able to converge an electron beam on a sample and make the focus position dynamically move, a deflecting unit for deflecting the electron beam, a movement mechanism for carrying and moving the sample, a deflection data and incident angle relationship storing circuit for storing the incident angle of the electron beam on the sample when the electron beam is deflected by the deflecting unit, a mark position detecting unit for detecting changes in reflected electrons at a mark provided on the sample when scanning the mark by the electron beam and thereby detecting the position of the mark, a mark position difference calculating unit for using the mark position detecting unit to scan a first mark provided on the sample by an electron beam of a first incident angle and a second mark in a predetermined positional relationship with the first mark by an electr