Patents by Inventor Masaki Matsui

Masaki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11099042
    Abstract: A clamp-on type ultrasonic flowmeter which is detachably attached to an outer wall of cylindrical piping is provided. An ultrasonic signal is transmitted to the piping from one of the first and the second ultrasonic devices, a plate wave corresponding to the ultrasonic signal is generated, and an ultrasonic signal corresponding to the plate wave is received by the other ultrasonic device. A pipe wall thickness of the piping and a frequency of the ultrasonic signal are in a state in which a plate wave of a low order asymmetric mode is significantly excited in the piping. A flow rate is calculated corresponding to phase velocity characteristics of the low order asymmetric mode.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: August 24, 2021
    Assignee: Keyence Corporation
    Inventors: Hiroki Matsui, Masaki Wada
  • Patent number: 11066307
    Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: July 20, 2021
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wei Song, Masaki Matsui, Toshihiko Tani
  • Patent number: 10774521
    Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: September 15, 2020
    Assignee: SANKYO FRONTIER CO. LTD.
    Inventors: Shinichiro Yabushita, Masaki Matsui, Kazunori Kamata
  • Patent number: 10615452
    Abstract: A high voltage rechargeable magnesium cell includes an anode and cathode housing. A magnesium metal anode is positioned within the housing. A high voltage electrolyte is positioned proximate the anode. A metal oxide cathode is positioned proximate the high voltage electrolyte. The magnesium cell includes a multi-cycle charge voltage up to at least 3.0 volts and includes a reversible discharge capacity.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: April 7, 2020
    Assignee: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
    Inventors: Wei Song, Timothy Sean Arthur, Claudiu Bucur, Masaki Matsui, John Muldoon, Nikhilendra Singh, Ruigang Zhang
  • Publication number: 20190210884
    Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.
    Type: Application
    Filed: March 18, 2019
    Publication date: July 11, 2019
    Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wei Song, Masaki Matsui, Toshihiko Tani
  • Publication number: 20190071860
    Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.
    Type: Application
    Filed: April 13, 2017
    Publication date: March 7, 2019
    Inventors: Shinichiro YABUSHITA, Masaki MATSUI, Kazunori KAMATA
  • Patent number: 10177404
    Abstract: A magnesium-ion battery includes a first electrode including an active material and a second electrode. An electrolyte is disposed between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes tin.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: January 8, 2019
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Nikhilendra Singh, Timothy Sean Arthur, Chen Ling, Masaki Matsui, Fuminori Mizuno
  • Patent number: 10121663
    Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: November 6, 2018
    Assignee: DENSO CORPORATION
    Inventors: Yoshinori Tsuchiya, Hiroyuki Tarumi, Shinichi Hoshi, Masaki Matsui, Kenji Itoh, Tetsuo Narita, Tetsu Kachi
  • Patent number: 10109727
    Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: October 23, 2018
    Assignee: DENSO CORPORATION
    Inventors: Kazuhiro Oyama, Yasushi Higuchi, Seigo Oosawa, Masaki Matsui, Youngshin Eum
  • Patent number: 10084052
    Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: September 25, 2018
    Assignee: DENSO CORPORATION
    Inventors: Yoshinori Tsuchiya, Shinichi Hoshi, Masaki Matsui, Kenji Itoh
  • Patent number: 9843038
    Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: December 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Takanobu Yamada, Yasuaki Matsuda, Masaki Matsui, Yuichi Aihara, Nobuyuki Imanishi
  • Publication number: 20170345919
    Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.
    Type: Application
    Filed: December 8, 2015
    Publication date: November 30, 2017
    Inventors: Kazuhiro OYAMA, Yasushi HIGUCHI, Seigo OOSAWA, Masaki MATSUI, Youngshin EUM
  • Publication number: 20170301765
    Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.
    Type: Application
    Filed: September 14, 2015
    Publication date: October 19, 2017
    Inventors: Yoshinori TSUCHIYA, Shinichi HOSHI, Masaki MATSUI, Kenji ITOH
  • Patent number: 9736324
    Abstract: A sheet post-processing device is mounted in an image forming apparatus that includes an image reading unit and an image forming unit. The image forming unit is located under the image reading unit with a space therebetween. The sheet post-processing device includes: a first tray that is located in the space and houses a sheet ejected from the image forming unit; a post-processing unit that is located in the space and performs post-processing on a sheet in the first tray; a transfer member that, after the post-processing is performed on a sheet in the first tray, transfers the sheet to a front side of the image forming apparatus; and a second tray that is located closer to the front side of the image forming apparatus than the first tray and houses a sheet transferred by the transfer member.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: August 15, 2017
    Assignee: KONICA MINOLTA, INC.
    Inventors: Riichi Hama, Ryo Morita, Akiyoshi Johdai, Shinobu Seki, Naoya Nakayama, Masaki Matsui, Hidehito Kishi, Shigeki Nozawa
  • Patent number: 9728609
    Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: August 8, 2017
    Assignees: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, DENSO CORPORATION
    Inventors: Tetsuo Narita, Kenji Ito, Kazuyoshi Tomita, Nobuyuki Otake, Shinichi Hoshi, Masaki Matsui
  • Publication number: 20170179481
    Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.
    Type: Application
    Filed: March 3, 2017
    Publication date: June 22, 2017
    Inventors: Takanobu YAMADA, Yasuaki MATSUDA, Masaki MATSUI, Yuichi AIHARA, Nobuyuki IMANISHI
  • Publication number: 20170162391
    Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.
    Type: Application
    Filed: March 26, 2015
    Publication date: June 8, 2017
    Inventors: Yoshinori TSUCHIYA, Hiroyuki TARUMI, Shinichi HOSHI, Masaki MATSUI, Kenji ITOH, Tetsuo NARITA, Tetsu KACHI
  • Patent number: 9609158
    Abstract: An image forming device having a printer unit, a post-processing unit, and an eject tray. The printer unit forms images on recording sheets, and the post-processing unit performs processing on a recoding sheet stack composed of one or more recording sheets output from the printer unit before the recording sheet stack is ejected onto the eject tray. The image forming device includes: a buffer unit that, while a first recording sheet resides in the post-processing unit for the post-processing, holds a second recording sheet therein, the second recording sheet output from the printer unit subsequent to the first recording sheet; and a reverse path that reverses recording sheets when the image forming device performs duplex printing. In a plan view of the image forming device taken along a vertical direction, the post-processing unit, the buffer unit, and the reverse path at least partially cover one another.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: March 28, 2017
    Assignee: Konica Minolta, Inc.
    Inventors: Masaki Matsui, Naoya Nakayama, Riichi Hama, Hidehito Kishi, Ryo Morita
  • Patent number: 9608288
    Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Takanobu Yamada, Yasuaki Matsuda, Masaki Matsui, Yuichi Aihara, Nobuyuki Imanishi
  • Patent number: 9312566
    Abstract: The electrolyte includes a magnesium salt having the formula Mg(BX4)2 where X is selected from H, F and O-alkyl. The electrolyte also includes a solvent, the magnesium salt being dissolved in the solvent. Various solvents including aprotic solvents and molten salts such as ionic liquids may be utilized.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: April 12, 2016
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Rana F. Mohtadi, Masaki Matsui