Abstract: Systems, methods, and other embodiments described herein relate to improving predicting conditions of a spot cooler. In one embodiment, a method includes acquiring, from at least the spot cooler, device data about operation of the spot cooler. The method includes predicting the operating condition of the spot cooler according to the device data using a model. The method includes providing the operating condition.

Abstract: A window material for an optical element, including: a synthetic quartz glass substrate having a flat plate shape and having main surfaces through which light is transmitted, at least one of the main surfaces being a rough surface; and an antireflection film formed on the at least one main surface of the synthetic quartz glass substrate, the main surface being the rough surface. The window material for an optical element of the present invention is easy in shape processing, undergoes little temporal change in a wide wavelength region and is stable over a long period of time, and has high total light transmittance of distributed light.

Abstract: The objective of the present invention is to provide a method for producing a layered composite metal oxide crystal material, which can be utilized as a positive electrode material for a lithium ion secondary battery or the like, in a milder condition, and methods for producing a positive electrode and a lithium ion secondary battery using the above method.

Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.

Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.

Abstract: A high voltage rechargeable magnesium cell includes an anode and cathode housing. A magnesium metal anode is positioned within the housing. A high voltage electrolyte is positioned proximate the anode. A metal oxide cathode is positioned proximate the high voltage electrolyte. The magnesium cell includes a multi-cycle charge voltage up to at least 3.0 volts and includes a reversible discharge capacity.

Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.

Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.

Abstract: A magnesium-ion battery includes a first electrode including an active material and a second electrode. An electrolyte is disposed between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes tin.

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.

Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.

Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.

Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.

Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.

Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.

Abstract: A sheet post-processing device is mounted in an image forming apparatus that includes an image reading unit and an image forming unit. The image forming unit is located under the image reading unit with a space therebetween. The sheet post-processing device includes: a first tray that is located in the space and houses a sheet ejected from the image forming unit; a post-processing unit that is located in the space and performs post-processing on a sheet in the first tray; a transfer member that, after the post-processing is performed on a sheet in the first tray, transfers the sheet to a front side of the image forming apparatus; and a second tray that is located closer to the front side of the image forming apparatus than the first tray and houses a sheet transferred by the transfer member.

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.

Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.