Patents by Inventor Masaki Matsui

Masaki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12160855
    Abstract: A band sharing communication system in which there are an N-ary system and an N+1-ary system in descending order of priority of communication, the systems share frequency bands and allocation of a requested band of a terminal station of each system is performed, includes: occupied band setting means for setting an N-ary occupied band and an N+1-ary occupied band adjacent to the N-ary occupied band; band allocation means for allocating a vacant band of the N-ary occupied band with respect to a requested band of an N-ary terminal station and allocating a vacant band of the N+1-ary occupied band with respect to a requested band of an N+1-ary terminal station; and band transferring means for, when there is no vacant band in the N-ary occupied band with respect to the requested band of the N-ary terminal station, if a vacant band equivalent to the requested band is present in the N+1-ary occupied band such that the vacant band is adjacent to the N-ary occupied band, transferring the vacant band from the N+1-ary oc
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: December 3, 2024
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Daisuke Goto, Fumihiro Yamashita, Munehiro Matsui, Hiroki Shibayama, Yutaka Imaizumi, Koichi Harada, Izumi Urata, Masaki Shima
  • Publication number: 20240393699
    Abstract: A mask blank substrate has first and second main surfaces of 152 mm×152 mm-square and 6.35 mm-thick, in which in a pseudo TTV map obtained by adding up maps of the first and second main surfaces, a difference between highest and lowest heights of a TTV1 map, is ?35 nm, excluding a primary component when a plane function is derived, and a difference between highest and lowest heights of a TTV2 map, is ?25 nm, excluding primary and secondary components when a curved-surface function is derived, in fitting of the pseudo TTV map within a cross-shaped region formed in a case where a first rectangular region is overlapped with a second rectangular region, the first and second rectangular regions of 132 mm×104 mm being orthogonal to each other, and parallel to four sides of the main surfaces centered at intersections of diagonal lines of the main surfaces.
    Type: Application
    Filed: May 23, 2024
    Publication date: November 28, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoaki SUGIYAMA, Daijitsu HARADA, Harunobu MATSUI, Masaki TAKEUCHI
  • Publication number: 20240328655
    Abstract: Systems, methods, and other embodiments described herein relate to improving predicting conditions of a spot cooler. In one embodiment, a method includes acquiring, from at least the spot cooler, device data about operation of the spot cooler. The method includes predicting the operating condition of the spot cooler according to the device data using a model. The method includes providing the operating condition.
    Type: Application
    Filed: March 25, 2024
    Publication date: October 3, 2024
    Inventors: Masaki Matsui, Masaki Motoyama
  • Publication number: 20240250223
    Abstract: A window material for an optical element, including: a synthetic quartz glass substrate having a flat plate shape and having main surfaces through which light is transmitted, at least one of the main surfaces being a rough surface; and an antireflection film formed on the at least one main surface of the synthetic quartz glass substrate, the main surface being the rough surface. The window material for an optical element of the present invention is easy in shape processing, undergoes little temporal change in a wide wavelength region and is stable over a long period of time, and has high total light transmittance of distributed light.
    Type: Application
    Filed: January 9, 2024
    Publication date: July 25, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Harunobu MATSUI, Daijitsu HARADA, Masaki TAKEUCHI
  • Publication number: 20240162435
    Abstract: The objective of the present invention is to provide a method for producing a layered composite metal oxide crystal material, which can be utilized as a positive electrode material for a lithium ion secondary battery or the like, in a milder condition, and methods for producing a positive electrode and a lithium ion secondary battery using the above method.
    Type: Application
    Filed: March 17, 2022
    Publication date: May 16, 2024
    Applicant: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Masaki MATSUI, Rannosuke MAEDA
  • Patent number: 11066307
    Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: July 20, 2021
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wei Song, Masaki Matsui, Toshihiko Tani
  • Patent number: 10774521
    Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: September 15, 2020
    Assignee: SANKYO FRONTIER CO. LTD.
    Inventors: Shinichiro Yabushita, Masaki Matsui, Kazunori Kamata
  • Patent number: 10615452
    Abstract: A high voltage rechargeable magnesium cell includes an anode and cathode housing. A magnesium metal anode is positioned within the housing. A high voltage electrolyte is positioned proximate the anode. A metal oxide cathode is positioned proximate the high voltage electrolyte. The magnesium cell includes a multi-cycle charge voltage up to at least 3.0 volts and includes a reversible discharge capacity.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: April 7, 2020
    Assignee: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
    Inventors: Wei Song, Timothy Sean Arthur, Claudiu Bucur, Masaki Matsui, John Muldoon, Nikhilendra Singh, Ruigang Zhang
  • Publication number: 20190210884
    Abstract: A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material.
    Type: Application
    Filed: March 18, 2019
    Publication date: July 11, 2019
    Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wei Song, Masaki Matsui, Toshihiko Tani
  • Publication number: 20190071860
    Abstract: An object is to provide an air conditioner-incorporating panel for a prefabricated house which can be safely moved so as to enhance the efficiency of operating of a step of assembling the prefabricated house. An outdoor unit P for an air conditioner is fixed to the outer surface of a wall panel 1 that is fitted to a prefabricated house. An indoor unit Q is fixed to the inner surface of the wall panel 1. A support base 2 is provided below the outdoor unit P on the side of a lower end portion of the outer surface of the wall panel 1. The wall panel 1, supported by the support base 2, is inclined so as to stand on its own at such an angle that loads on the inner and outer surfaces are equalized. Casters 3 are fitted to the lower surface of the support base 2.
    Type: Application
    Filed: April 13, 2017
    Publication date: March 7, 2019
    Inventors: Shinichiro YABUSHITA, Masaki MATSUI, Kazunori KAMATA
  • Patent number: 10177404
    Abstract: A magnesium-ion battery includes a first electrode including an active material and a second electrode. An electrolyte is disposed between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes tin.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: January 8, 2019
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Nikhilendra Singh, Timothy Sean Arthur, Chen Ling, Masaki Matsui, Fuminori Mizuno
  • Patent number: 10121663
    Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: November 6, 2018
    Assignee: DENSO CORPORATION
    Inventors: Yoshinori Tsuchiya, Hiroyuki Tarumi, Shinichi Hoshi, Masaki Matsui, Kenji Itoh, Tetsuo Narita, Tetsu Kachi
  • Patent number: 10109727
    Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: October 23, 2018
    Assignee: DENSO CORPORATION
    Inventors: Kazuhiro Oyama, Yasushi Higuchi, Seigo Oosawa, Masaki Matsui, Youngshin Eum
  • Patent number: 10084052
    Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: September 25, 2018
    Assignee: DENSO CORPORATION
    Inventors: Yoshinori Tsuchiya, Shinichi Hoshi, Masaki Matsui, Kenji Itoh
  • Patent number: 9843038
    Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: December 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Takanobu Yamada, Yasuaki Matsuda, Masaki Matsui, Yuichi Aihara, Nobuyuki Imanishi
  • Publication number: 20170345919
    Abstract: A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.
    Type: Application
    Filed: December 8, 2015
    Publication date: November 30, 2017
    Inventors: Kazuhiro OYAMA, Yasushi HIGUCHI, Seigo OOSAWA, Masaki MATSUI, Youngshin EUM
  • Publication number: 20170301765
    Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm?2 and allows a normally-off element to be reliably provided.
    Type: Application
    Filed: September 14, 2015
    Publication date: October 19, 2017
    Inventors: Yoshinori TSUCHIYA, Shinichi HOSHI, Masaki MATSUI, Kenji ITOH
  • Patent number: 9736324
    Abstract: A sheet post-processing device is mounted in an image forming apparatus that includes an image reading unit and an image forming unit. The image forming unit is located under the image reading unit with a space therebetween. The sheet post-processing device includes: a first tray that is located in the space and houses a sheet ejected from the image forming unit; a post-processing unit that is located in the space and performs post-processing on a sheet in the first tray; a transfer member that, after the post-processing is performed on a sheet in the first tray, transfers the sheet to a front side of the image forming apparatus; and a second tray that is located closer to the front side of the image forming apparatus than the first tray and houses a sheet transferred by the transfer member.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: August 15, 2017
    Assignee: KONICA MINOLTA, INC.
    Inventors: Riichi Hama, Ryo Morita, Akiyoshi Johdai, Shinobu Seki, Naoya Nakayama, Masaki Matsui, Hidehito Kishi, Shigeki Nozawa
  • Patent number: 9728609
    Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: August 8, 2017
    Assignees: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, DENSO CORPORATION
    Inventors: Tetsuo Narita, Kenji Ito, Kazuyoshi Tomita, Nobuyuki Otake, Shinichi Hoshi, Masaki Matsui
  • Publication number: 20170179481
    Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.
    Type: Application
    Filed: March 3, 2017
    Publication date: June 22, 2017
    Inventors: Takanobu YAMADA, Yasuaki MATSUDA, Masaki MATSUI, Yuichi AIHARA, Nobuyuki IMANISHI