Abstract: The electrolyte includes a magnesium salt having the formula Mg(BX4)2 where X is selected from H, F and O-alkyl. The electrolyte also includes a solvent, the magnesium salt being dissolved in the solvent. Various solvents including aprotic solvents and molten salts such as ionic liquids may be utilized.

Abstract: A sheet post-processing device is mounted in an image forming apparatus that includes an image reading unit and an image forming unit. The image forming unit is located under the image reading unit with a space therebetween. The sheet post-processing device includes: a first tray that is located in the space and houses a sheet ejected from the image forming unit; a post-processing unit that is located in the space and performs post-processing on a sheet in the first tray; a transfer member that, after the post-processing is performed on a sheet in the first tray, transfers the sheet to a front side of the image forming apparatus; and a second tray that is located closer to the front side of the image forming apparatus than the first tray and houses a sheet transferred by the transfer member.

Abstract: An image forming device having a printer unit, a post-processing unit, and an eject tray. The printer unit forms images on recording sheets, and the post-processing unit performs processing on a recoding sheet stack composed of one or more recording sheets output from the printer unit before the recording sheet stack is ejected onto the eject tray. The image forming device includes: a buffer unit that, while a first recording sheet resides in the post-processing unit for the post-processing, holds a second recording sheet therein, the second recording sheet output from the printer unit subsequent to the first recording sheet; and a reverse path that reverses recording sheets when the image forming device performs duplex printing. In a plan view of the image forming device taken along a vertical direction, the post-processing unit, the buffer unit, and the reverse path at least partially cover one another.

Abstract: A positive electrode for a lithium ion secondary battery, the positive electrode including: a coated particle including a positive active material particle and a reactive layer on the surface of the positive active material particle; and a sulfide-containing solid electrolyte particle which is in contact with the coated particle, wherein the reactive layer includes a reactive element other than lithium and oxygen, wherein the reactive element has a reactivity with the sulfide-containing solid electrolyte particle which is greater than with a reactivity of the reactive element with a transition metal element included in the positive active material particle, and wherein a ratio of a thickness of the reactive layer to a particle diameter of the positive active material particle is in a range of about 0.0010 to about 0.25.

Abstract: A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

Abstract: In a semiconductor device, a trench includes a first trench that has an opening portion on a surface of a base layer, and a second trench that is communicated with the first trench and in which a distance between opposed side walls is greater than opposed side walls of the first trench and a bottom portion is located in a drift layer. A wall surface of a connecting portion of the second trench connecting to the first trench is rounded. Therefore, an occurrence of a large electrical field concentration in the vicinity of the connecting portion between the first trench and the second trench can be suppressed. Also, when electrons are supplied from a channel region to the drift layer, it is less likely that a flow direction of the electrons will be sharply changed in the vicinity of the connecting portion. Therefore, an on-state resistance can be reduced.

Abstract: A magnesium ion battery includes a first electrode including a substrate and an active material deposited on the substrate. Also provided is a second electrode. An electrolyte is located between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes indium and an intermetallic compound of magnesium and indium.

Abstract: A sheet post-processing device is mounted in an image forming apparatus that includes an image reading unit and an image forming unit. The image forming unit is located under the image reading unit with a space therebetween. The sheet post-processing device includes: a first tray that is located in the space and houses a sheet ejected from the image forming unit; a post-processing unit that is located in the space and performs post-processing on a sheet in the first tray; a transfer member that, after the post-processing is performed on a sheet in the first tray, transfers the sheet to a front side of the image forming apparatus; and a second tray that is located closer to the front side of the image forming apparatus than the first tray and houses a sheet transferred by the transfer member.

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract: A semiconductor device includes: a drift layer; a base layer arranged in a surface portion of the drift layer; multiple trenches penetrating the base layer and reaching the drift layer; and a gate electrode arranged on the gate insulation film in each trench. Each trench includes: a first trench having an opening on a surface of the base layer; and a second trench connecting the first trench and having a portion, of which a distance between facing sidewalls of the second trench is longer than a distance between facing sidewalls of the first trench. The opening of each first trench is sealed with the gate electrode. An inside of each gate electrode includes a cavity portion.

Abstract: An electrochemical device, such as a magnesium-ion battery, comprises a first electrode including a first active material, a second electrode, and an electrolyte located between the first electrode and the second electrode. The electrolyte may include a magnesium compound, such as a magnesium salt. In representative examples, an improved active material includes a group 15 chalcogenide, in particular a bismuth chalcogenide, such as bismuth oxide or other chalcogenide. In various examples, the improved active material may be used in a positive or negative electrode of an example battery.

Abstract: A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

Abstract: A magnesium ion battery includes a first electrode including a substrate and an active material deposited on the substrate. Also provided is a second electrode. An electrolyte is located between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes indium and an intermetallic compound of magnesium and indium.

Abstract: A magnesium battery includes a first electrode including an active material and a second electrode. An electrolyte is disposed between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes an inter-metallic compound of magnesium and bismuth.

Abstract: A main object is to provide an asymmetric type BF3 complex which is useful as a solvent for a liquid electrolyte for electrochemical device, in which the liquid electrolyte has a wide potential window and is particularly excellent in oxidation resistance. To attain the object, an asymmetric type BF3 complex is represented by the following general formula (1): (in the general formula (1), each of R1 and R2 is an alkyl group having 1 to 6 carbon atoms and may be the same or different, and R1 and R2 may be branched or may form a ring).

Abstract: A magnesium battery includes a first electrode including an active material and a second electrode. An electrolyte is disposed between the first electrode and the second electrode. The electrolyte includes a magnesium compound. The active material includes an inter-metallic compound of magnesium and antimony. The active material also includes antimony or an alloy of bismuth and antimony.

Abstract: A rechargeable magnesium-ion battery includes a first electrode, a second electrode, and an electrolyte layer between the first electrode and the second electrode. The electrolyte includes a source of magnesium ions, such as a magnesium salt. The first electrode includes an active material, the active material including indium and tin, for example as a solid solution or intermetallic compound of indium and tin.

Abstract: A rechargeable magnesium-ion battery includes a first electrode, a second electrode, and an electrolyte layer between the first electrode and the second electrode. The electrolyte includes a source of magnesium ions, such as a magnesium salt. The first electrode includes an active material, the active material including tin and bismuth, for example as a binary combination of Sn and Bi, such as a solid solution or intermetallic compound.

Abstract: An electrolyte for a magnesium battery includes a magnesium salt having the formula MgBaHbXy where a=2-12, b=0-12 y=0-8 wherein when b=0 X is O-alkyl and when b=1-11 X is O-alkyl or F. The electrolyte also includes a solvent, the magnesium salt being dissolved in the solvent. Various solvents including aprotic solvents and molten salts such as ionic liquids may be utilized.

Abstract: A rechargeable magnesium-ion battery includes a first electrode, a second electrode, and an electrolyte layer between the first electrode and the second electrode. The electrolyte includes a source of magnesium ions, such as a magnesium salt. The first electrode includes an active material, the active material including indium and tin, for example as a solid solution or intermetallic compound of indium and tin.