Abstract: An electrochromic device comprising a pair of electrically conductive substrates disposed facing each other and each having at least on its inner surface an electrode at least one of said electrically conductive substrates comprising a transparent substrate and a transparent electrode, an ion conductive material inserted between said pair of electrically conductive substrates, an electrochromic material-containing layer disposed between either one of said electrodes and said ion conductive material and an ultraviolet absorptive layer disposed between either at least one of said transparent substrates and the electrode disposed thereover or on the surface of said transparent substrate opposite to the transparent electrode disposed thereover, said ultraviolet absorptive layer being formed by coating and curing on the surface at said transparent substrate a reaction product of (A) an aminosilane compound of the formula (I) or the derivative thereof and (B) an ultraviolet absorptive material having in its molecul

Abstract: A novel tertiary alkylsilane is disclosed, which is useful as a variety of starting materials such as for photoreactive materials including semiconductor materials, insulative materials and photoresists, polymerization initiators and silicone-based ceramics precursors and is contributive to the safe and efficient production of high grade semiconductors.

Abstract: A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.

Abstract: A method of forming a connection hole, which includes the steps of: laminating an etching stopper film made of a SiN based material and an interlayer insulating film made of a SiOx based material on a substrate in this order; forming an organic film pattern on the interlayer insulating film on the basis of a connection hole pattern; dry-etching the interlayer insulating film using the organic film pattern as a mask while keeping a selection ratio to the etching stopper film; a fourth step of removing a carbon based protective film which is deposited on an exposed surface of the etching stopper film by the dry etching, using an etching reactive system including an oxygen based chemical species; and a fifth step of completing a connection hole by selectively etching the etching stopper film.

Abstract: A method for producing a semiconducting material by subjecting a hydrosilane monomer to dehydrogenative condensation followed by thermal decomposition is disclosed. The hydrosilane monomer may be a hydromonosilane, a hydrodisilane or a hydrotrisilane. The dehydrogenative condensation is conducted in the presence of a catalyst that contains at least one metal or metal compound of Groups 3B, 4B and 8 of the Periodic Table. The catalyst may be used in conjunction with a silane compound or a metal hydride. The semiconducting material that is formed may have a silicon content of 70 atomic % or more.

Abstract: A photovoltaic element produced from a product resulting from decomposition of a silicon polymer having an organic substituent of the group consisting of a hydrocarbon group, a halogenated hydrocarbon group, and a silyl group R.sup.3 R.sup.4 R.sup.5 Si- (wherein R.sup.3 -R.sup.5 each are identical or different, including C.sub.1 -C.sub.8 alkyl groups and C.sub.6 -C.sub.10 aryl groups). The inventive photovoltaic element is substantially pollution-free and capable of quantity production at a relatively large unit size.

Abstract: Silicon-containing organic compounds useful as starting materials of functional polymer materials, as well as a process for preparing the same, are provided. The silicon-containing organic compounds are represented by the following general formula: ##STR1## where R.sup.1 is a .pi. conjugated type divalent organic group having 2 to 30 carbon atoms, R.sup.2 is a hydrocarbon group having 1 to 30 carbon atoms, X.sup.1 is a halogen atom, m and n satisfy the conditions of 1.ltoreq.m.ltoreq.2 and n.gtoreq.2, respectively. A compound of the above general formula is prepared by reacting an organometallic compound of the following general formula:M.sup.1 -R.sup.1 -M.sup.2where M.sup.1 and M.sup.2 are each a metal selected from Group 1, 2 and 12 metals in the Periodic Table, with a silane compound of the following general formula: ##STR2## where R.sup.2 is a hydrocarbon group having 1 to 30 carbon atoms, X.sup.1, X.sup.2 and X.sup.3 are each a halogen atom.

Abstract: Polysilanes are produced from hydrosilanes using as a catalyst a mixture of a specific metallocene compound and a specific silyl compound or a mixture of the specific metallocene compound and a specific metallic hydride.This invention can efficiently provide a polymer having a higher degree of polymerization than in case of using a known catalyst.

Abstract: A d.c. high tension cable termination or joint and method of manufacturing same is described. The cable comprises an electric conductor, an electrically insulating layer which is concentrically applied over the conductor, and a semi-conductive layer which is concentrically applied over the insulating layer in close contact therewith. The cable termination or joint comprises an electrically insulating liquid impregnated into a portion of the semi-conductive layer which is located adjacent to an end of the insulating layer so as to present an electrical resistance which is higher than that of the non-impregnated portion of the semi-conductive layer but is lower than that of the insulating layer. The electric conductor is electrically connected with the end of that portion of the semi-conductive layer impregnated with the insulating liquid which is located nearer the conductor.