Patents by Inventor Masaki Ohashi

Masaki Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist composition and patterning process
    Patent number: 10509314
    Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a cyclic hydrocarbon-substituted amino group offers dimensional stability on PPD and a satisfactory resolution.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: December 17, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20190369491
    Abstract: A resist composition comprising a base polymer and an onium salt of N-carbonylsulfonamide having iodized benzene ring offers a high sensitivity, minimal LWR and improved CDU, independent of whether it is of positive or negative tone.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Takayuki Fujiwara
  • Chemically amplified positive resist composition and resist pattern forming process
    Patent number: 10495969
    Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: December 3, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaaki Kotake, Keiichi Masunaga, Satoshi Watanabe, Masaki Ohashi
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20190354012
    Abstract: A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.
    Type: Application
    Filed: July 31, 2019
    Publication date: November 21, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • Resist composition and patterning process
    Patent number: 10474030
    Abstract: A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: November 12, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Takeshi Sasami
  • PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20190324367
    Abstract: A photoacid generator having formula (1a) is provided. A chemically amplified resist composition comprising the PAG forms a pattern of rectangular profile with a good balance of sensitivity and LWR when processed by photolithography using ArF excimer laser, EB or EUV.
    Type: Application
    Filed: April 9, 2019
    Publication date: October 24, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Kazuya Honda, Takayuki Fujiwara, Masaki Ohashi, Kazuhiro Katayama
  • Positive resist composition, resist pattern forming process, and photomask blank
    Patent number: 10416558
    Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: September 17, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Masaaki Kotake, Masaki Ohashi
  • Polymer compound for conductive polymer and method for producing the same
    Patent number: 10363555
    Abstract: The present invention provides a polymer compound for a conductive polymer, having one or more kinds of repeating units “a” represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion exchange of a lithium salt, a sodium salt, a potassium salt, a sulfonium compound salt, or a nitrogen compound salt of sulfonic acid residue with a weight average molecular weight in the range of 1,000 to 500,000, wherein R1 represents a hydrogen atom or a methyl group, R2 represents a fluorine atom or a trifluoromethyl group, “m” represents an integer of 1 to 4, and “a” satisfies 0<a?1.0. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group that is soluble in an organic solvent and suitably used for fuel cells or a dopant for conductive materials.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: July 30, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Koji Hasegawa, Masaki Ohashi, Masayoshi Sagehashi, Takayuki Nagasawa
  • Resist composition and patterning process
    Patent number: 10323113
    Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodized benzoyloxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: June 18, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Takayuki Fujiwara, Masahiro Fukushima, Kazuya Honda
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20190155155
    Abstract: A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • Resist composition and patterning process
    Patent number: 10295904
    Abstract: A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: May 21, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20190113844
    Abstract: A resist composition comprising a base polymer and a sulfonium salt of thiophenecarboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
    Type: Application
    Filed: September 26, 2018
    Publication date: April 18, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM SALT
    Publication number: 20190113846
    Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 18, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takeshi Sasami, Masaki Ohashi
  • Sulfonium compound, making method, resist composition, and pattern forming process
    Patent number: 10248022
    Abstract: A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: April 2, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Ryosuke Taniguchi
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20190094690
    Abstract: A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.
    Type: Application
    Filed: September 13, 2018
    Publication date: March 28, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi, Masahiro Fukushima, Takayuki Fujiwara
  • Polymer, making method, resist composition, and patterning process
    Patent number: 10234757
    Abstract: A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: March 19, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaki Ohashi, Tomohiro Kobayashi
  • Resist composition and patterning process
    Patent number: 10222696
    Abstract: A resist composition comprising a base polymer and a biguanide salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 5, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20190064665
    Abstract: A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.
    Type: Application
    Filed: August 22, 2018
    Publication date: February 28, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takayuki Fujiwara, Ryo Mitsui, Masaki Ohashi, Ryosuke Taniguchi, Koji Hasegawa
  • SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    Publication number: 20190033716
    Abstract: A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
    Type: Application
    Filed: July 23, 2018
    Publication date: January 31, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masaki Ohashi, Jun Hatakeyama, Teppei Adachi
  • Sulfonium salt, resist composition, and patterning process
    Patent number: 10180626
    Abstract: On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: January 15, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki Fujiwara, Masaki Ohashi, Ryosuke Taniguchi