Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Abstract: A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

Abstract: A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A.

Abstract: A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.

Abstract: A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in order from a substrate side, in which the laminate configuration includes a columnar mesa section including an upper part of the lower multilayer reflecting mirror, the active layer and the upper multilayer reflecting mirror, and the lower multilayer reflecting mirror includes a plurality of pairs of a low refractive index layer and a high refractive index layer, and a plurality of oxidation layers nonuniformly distributed in a direction rotating around a central axis of the mesa section in a region except for a central region of one or more of the low refractive index layers.

Abstract: A Vertical Cavity Surface Emitting Laser capable of being easily and inexpensively manufactured and stabilizing the polarization direction of laser light in one direction is provided. The VCSEL includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflectors, in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.

Abstract: The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength ?x is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ?R(=Rx?Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Abstract: A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A.

Abstract: A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction.

Abstract: A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.