Abstract: In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.

Abstract: In case where a key having a detection region (inner frame) in which user's instructions can be accepted is displayed according to a certain operation status of an apparatus, and in case where there is an invalid region in which the user's instruction is not detectable is adjacent to a key display region (outer frame) of the key, the detection region of the key is caused to be larger than the key display region by utilizing the invalid region. Moreover, the detection region is expanded/shrunk according to key arrangement and a number of keys to be displayed. With this, the detection region of the key is expanded/shrunk according to according to the key arrangement on the screen in a display-cum-operation device in which a display device and a coordinate input device are integrated.

Abstract: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

Abstract: In case where a key having a detection region (inner frame) in which user's instructions can be accepted is displayed according to a certain operation status of an apparatus, and in case where there is an invalid region in which the user's instruction is not detectable is adjacent to a key display region (outer frame) of the key, the detection region of the key is caused to be larger than the key display region by utilizing the invalid region. Moreover, the detection region is expanded/shrunk according to key arrangement and a number of keys to be displayed. With this, the detection region of the key is expanded/shrunk according to according to the key arrangement on the screen in a display-cum-operation device in which a display device and a coordinate input device are integrated.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.