Abstract: A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.

Abstract: Provided is a control device of an internal combustion engine for suppressing variation in the internal EGR amount among cylinders and improving the merchantability. A control device 1 of an internal combustion engine 3 has an ECU 2, wherein the internal combustion engine 3 includes an electric turbocharger 5 and first to fourth cylinders #1 to #4. The ECU 2 sets a target rotation change amount DN#i for a turbine 5b of the electric turbocharger 5 corresponding to each cylinder according to the operation state of the internal combustion engine 3 (Step 35), and controls a TC motor 5c of the electric turbocharger 5 in a control period, which includes an exhaust stroke in one combustion cycle of each cylinder, to match the target rotation change amount DN#i (Step 23).

Abstract: A control device of a vehicle capable of improving acceleration responsiveness and suppressing increase in the NOx emission amount when a required torque is increased during a steady lean operation. A target air-fuel ratio (AFCMD) is set according to an accelerator pedal operation of a driver. When the driver depresses an accelerator pedal to make an acceleration request during the lean operation, in which the AFCMD is set to a predetermined lean air-fuel ratio (AFLN), air-fuel ratio reduction control is executed to reduce the AFCMD according to the acceleration request. In the air-fuel ratio reduction control, when the AFCMD calculated according to a required torque (TRQCMD) is smaller than a limit air-fuel ratio (AFLMT), the AFCMD is set to the AFLMT, and the AFLMT is set to a value smaller than the AFLN set in a steady state of the lean operation and larger than a theoretical air-fuel ratio (AFST).

Abstract: [Problem] To provide a hollow operating lever that is easily manufactured with good operability. [Solution] A hollow operating lever (4), which is formed in such a manner that end portions (W1 and W2) of a flat plate-shaped workpiece (W) are joined to each other at a joint (31) and thus is rotatably provided with respect to a support shaft (3), is characterized by including: a first wall (10) that is an operation surface side on which rotational force (F) acts to rotate; a pair of second walls (20) that are provided with coaxial holes (21) through which the support shaft is inserted, and are bent continuously to both ends of the first wall; and a third wall (30) that is provided to face the first wall (10) and is configured to connect the pair of second walls to each other through the joint.

Abstract: A layered body includes: a plate-like supporting body having a supporting main surface; and a plurality of projection portions disposed on the supporting main surface, each of the plurality of projection portions being composed of a group III nitride and having a dislocation density of not more than 1×108 cm?3. The projection portion preferably has a polygonal planar shape. The projection portion preferably has a plate-like shape. Preferably, each of the plurality of projection portions has a main surface opposite to the supporting body and corresponding to a {0001} plane of the group III nitride of the projection portions, and the adjacent projection portions of the plurality of projection portions have end surfaces facing each other and corresponding to a {11-20} plane of the group III nitride of the projection portions.

Abstract: A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm?3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm?3 or less.

Abstract: A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G?/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm2, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 ?m or more and 100 ?m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G? of 40 cm?1 or less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: In one aspect, a method of treating a condition associated with spinal cord injury is disclosed, wherein an agent that inhibits excitatory neurons and/or activates inhibitory interneurons may be administered to an individual in need thereof. Articles of manufacture and kits related to the disclosed methods are also disclosed.

Abstract: A substrate includes: a support substrate having a first main surface and a surface layer region which includes at least the first main surface and is formed of any one material selected from the group consisting of boron nitride, molybdenum disulfide, tungsten disulfide, niobium disulfide, and aluminum nitride; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of the material forming the surface layer region. Accordingly, the substrate is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: A control system and a control method for an internal combustion engine, which are capable of accurately calculating an in-cylinder gas amount and an EGR ratio by a relatively simple method even in a case where an in-cylinder gas temperature is changed by execution of internal EGR, and properly controlling the engine using the EGR ratio thus calculated. An in-cylinder gas amount Gact actually filled in the cylinder is calculated by correcting an ideal in-cylinder gas amount Gth, which is an amount of gases filled in a cylinder in an ideal state in which it is assumed that no exhaust gases of the engine are recirculated into the cylinder, using an ideal in-cylinder gas temperature Tcylth according to an in-cylinder gas temperature Tcyl, and an EGR ratio REGRT is calculated using the in-cylinder gas amount Gact and an intake air amount Gaircyl.

Abstract: A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm?3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm?3 or less.

Abstract: A controller for an internal combustion engine includes a regenerative device and at least one of ignition timing circuitry and opening degree circuitry. The ignition timing circuitry is configured to retard an ignition timing so as to decrease a torque generated by the internal combustion engine in a shift-up operation of a multi-stage automatic transmission during a supercharging operation by a supercharger. The opening degree circuitry is configured to reduce an opening degree of a throttle valve so as to decrease a torque generated by the internal combustion engine in a shift-up operation of a multi-stage automatic transmission during a supercharging operation by a supercharger. The regenerative device is coupled to a compressor or a turbine of the supercharger to regenerate rotational energy in the compressor or the turbine so as to decrease the torque in the shift-up operation during the supercharging operation.

Abstract: A control device for an internal combustion engine including a supercharger and a waste gate valve, the supercharger including a compressor an electric motor, and a turbine, the turbine being provided in an exhaust passage of the internal combustion engine, the waste gate valve being provided in a bypass passage that bypasses the turbine, the control device includes circuitry. The circuitry is configured to drive the electric motor in a high-load operation state in which the load of the internal combustion engine is determined to be equal to or larger than a first reference load and the temperature of the exhaust gas is determined to be expected to be higher than a reference temperature. The circuitry is configured to increase an opening degree of the waste gate valve in the high-load operation state.

Abstract: A control device for an internal combustion engine includes circuitry. The circuitry is configured to determine whether a running state of the internal combustion engine is in an auxiliary driving state in which an electric motor drives a compressor. The circuitry is configured to increase an opening degree of a waste gate valve when the running state is determined to be in the auxiliary driving state. The circuitry is configured to control a valve actuation phase variable mechanism to increase an overlap period in which a valve opening period of an intake valve and a valve opening period of an exhaust valve are overlapped with each other when the running state is determined to be in the auxiliary driving state.

Abstract: A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G?/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Abstract: A control apparatus for an internal combustion engine, which, in the case of intake-side and exhaust-side cleaning controls being performed, is capable of ensuring stable combustion of a mixture when the engine is returned from a decelerating FC operation to a normal operation, thereby making it possible to enhance marketability. The control apparatus for the engine includes an ECU. The ECU performs intake-side cleaning control for controlling an intake cam phase CAIN to a predetermined most advanced value CAIN_ADV so as to increase a valve overlap period of an intake valve and an exhaust valve, and performs exhaust-side cleaning control for controlling an exhaust cam phase CAEX to a predetermined most retarded value CAEX_RET so as to increase the valve overlap period of the intake valve and the exhaust valve. Further, during execution of one of the intake-side and exhaust-side cleaning controls, the ECU inhibits execution of the other.

Abstract: A valve reference position-learning device for an internal combustion engine, which is capable of accurately learning the reference position of a valve both before and after the warm-up of the engine, while properly reflecting thereon a deviation of the reference position caused by the thermal elongation of the valve and drive system after the warm-up of the engine. The valve reference position-learning device calculates and updates a learned value of the reference position of the wastegate valve both at and after the start of the engine, by first and second learnings, respectively. The learned value calculated by the first learning is stored as an existing learned value. Further, at the start of the engine, if the calculation of the learned value is not completed, the learned value is set to the existing stored learned value.

Abstract: A pumping loss calculation device for an internal combustion engine, which is capable of accurately calculating the pumping loss of the engine while reflecting thereon the pumping loss which varies with a change in opening timing of an exhaust valve. The pumping loss calculation device calculates a basic amount of a pumping loss torque based on intake and exhaust pressures, a pumping loss torque of the pumping loss torque of the engine, which varies with a change in the opening timing of the exhaust valve, as an exhaust gas sweep-out loss torque, based on the estimated in-cylinder gas amount and a detected exhaust phase, and the pumping loss torque based on the basic amount and the exhaust gas sweep-out loss torque.