Abstract: A temperature detecting probe as a contact-probe type temperature detector includes a plunger portion contactable with a semiconductor device as an object to be measured, a spring member placed on a base end portion of the plunger portion, a barrel portion pressing the plunger portion the semiconductor device side with the spring member interposed therebetween, and a thermocouple as a temperature measuring portion detecting a temperature of the semiconductor device.

Abstract: A Schottky barrier diode includes a semiconductor layer, a Schottky electrode on a first main surface of the semiconductor layer, the Schottky electrode being in Schottky contact with the semiconductor layer, and an ohmic electrode on a second main surface of the semiconductor layer opposite the first main surface, the ohmic electrode being in ohmic contact with the semiconductor layer. The semiconductor layer contains gallium nitride or silicon carbide. The semiconductor layer includes a drift layer. The drift layer has a thickness of 2 ?m or less.

Abstract: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a minor polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An qaxis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.

Abstract: [Problem] A method for manufacturing a bent hollow pipe is provided, in which even when a three-dimensionally bent pipe is formed, a gap, an uneven thickness, and the like would not occur at contact portions at the ends of both of the flange portions when press work is finished, and thus a pipe having the high quality contact portions can be formed. [Solution] In a method for manufacturing a bent hollow pipe, a material W, which is to be processed and which is a flat plate extending a first plane formed by a first direction and a second direction perpendicular to the first direction, is pressed in a stepwise manner using a plurality of forming dies from a third direction perpendicular to the first plane, so that two sides of a second plane formed by the second direction and the third direction of the material W are brought into contact with each other, and the bent hollow pipe is made to be bent and extend in a three dimensional manner that is bent in the first plane and in the second plane.

Abstract: A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

Abstract: Disclosed is a gallium nitride crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured by SIMS, and other regions of lower oxygen concentrations measured by SIMS. The top surface is a C-plane surface. The ratio of the highest oxygen concentration to the lowest oxygen concentration is equal to or more than fifty.

Abstract: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a minor polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An qaxis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.

Abstract: An intake control system for an internal combustion engine, which, even when there are a plurality of intake air amounts for attaining one target torque, is capable of positively selecting a minimum intake air amount therefrom without causing hunting, and setting the minimum intake air amount as a target intake air amount, thereby making it possible to improve fuel economy. The intake control system calculates a maximum intake air amount, sets a plurality of provisional intake air amounts within a range of 0 to the maximum intake air amount, calculates torques estimated to be output from the engine with respect to the provisional intake air amounts, respectively, selects a minimum provisional intake air amount that makes the estimated torque equal to or close to the target torque from the relationship between the provisional intake air amounts and the estimated torques, and sets the same as the target intake air amount.

Abstract: An intake control system for an internal combustion engine is capable of ensuring a differential pressure across an EGR valve, and controlling an EGR amount with high accuracy. A target fresh air amount is set based on a demanded torque calculated according to operating conditions of the engine. A differential pressure across an EGR valve is set as a target differential pressure. When it is determined that the across-valve differential pressure is not in a state in which the target differential pressure can be ensured, an opening degree of the EGR valve is controlled to limit an EGR amount. An opening degree of a throttle valve is controlled based on the target fresh air amount, so as to ensure the target differential pressure.

Abstract: A control apparatus for an internal combustion engine, which is capable of, when controlling a variable intake cam phase mechanism and a variable exhaust cam phase mechanism, ensuring a stable combustion of a mixture and improving the drivability, even when one of the two is in a failure state. The control apparatus includes an ECU. The ECU calculates an intake cam phase and an exhaust cam phase, determines, based on the calculated intake cam phase and exhaust cam phase, whether or not there has occurred a failure state of one of the mechanisms, in which the valve overlap period becomes longer than during a normal time, and controls, when it is determined that there has occurred the failure state of the one mechanism, the other mechanism such that the valve overlap period becomes shorter.

Abstract: A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

Abstract: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a minor polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.

Abstract: [Problem] To provide a hollow operating lever that is easily manufactured with good operability. [Solution] A hollow operating lever (4), which is formed in such a manner that end portions (W1 and W2) of a flat plate-shaped workpiece (W) are joined to each other at a joint (31) and thus is rotatably provided with respect to a support shaft (3), is characterized by including: a first wall (10) that is an operation surface side on which rotational force (F) acts to rotate; a pair of second walls (20) that are provided with coaxial holes (21) through which the support shaft is inserted, and are bent continuously to both ends of the first wall; and a third wall (30) that is provided to face the first wall (10) and is configured to connect the pair of second walls to each other through the joint.

Abstract: A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

Abstract: A control system for an internal combustion engine, which is capable of directly and properly calculating the most fuel-efficient torque according to operating conditions of the engine without setting or learning in advance operating lines indicative of the most fuel-efficient torques, thereby making it possible to reduce costs and enhance fuel economy. In the control system, when the engine is operated at a predetermined reference rotational speed, a plurality of fuel consumption ratio parameters associated with a plurality of estimated torques are calculated based on a provisional intake air amount-estimated torque relationship which is the relationship between provisional intake air amounts and estimated torques to be obtained when the provisional intake air amounts of intake air are supplied. Further, an estimated torque associated with a minimum value of the fuel consumption ratio parameters is calculated as the most fuel-efficient torque at the reference rotational speed.

Abstract: A pumping loss calculation device for an internal combustion engine, which is capable of accurately calculating the pumping loss of the engine while reflecting thereon the pumping loss which varies with a change in opening timing of an exhaust valve. The pumping loss calculation device calculates a basic amount of a pumping loss torque based on intake and exhaust pressures, a pumping loss torque of the pumping loss torque of the engine, which varies with a change in the opening timing of the exhaust valve, as an exhaust gas sweep-out loss torque, based on the estimated in-cylinder gas amount and a detected exhaust phase, and the pumping loss torque based on the basic amount and the exhaust gas sweep-out loss torque.

Abstract: A valve reference position-learning device for an internal combustion engine, which is capable of accurately learning the reference position of a valve both before and after the warm-up of the engine, while properly reflecting thereon a deviation of the reference position caused by the thermal elongation of the valve and drive system after the warm-up of the engine. The valve reference position-learning device calculates and updates a learned value of the reference position of the wastegate valve both at and after the start of the engine, by first and second learnings, respectively. The learned value calculated by the first learning is stored as an existing learned value. Further, at the start of the engine, if the calculation of the learned value is not completed, the learned value is set to the existing stored learned value.

Abstract: Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric, foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.

Abstract: [Problem] A method for manufacturing a bent hollow pipe is provided, in which even when a three-dimensionally bent pipe is formed, a gap, an uneven thickness, and the like would not occur at contact portions at the ends of both of the flange portions when press work is finished, and thus a pipe having the high quality contact portions can be formed. [Solution] In a method for manufacturing a bent hollow pipe, a material W, which is to be processed and which is a flat plate extending a first plane formed by a first direction and a second direction perpendicular to the first direction, is pressed in a stepwise manner using a plurality of forming dies from a third direction perpendicular to the first plane, so that two sides of a second plane formed by the second direction and the third direction of the material W are brought into contact with each other, and the bent hollow pipe is made to be bent and extend in a three dimensional manner that is bent in the first plane and in the second plane.

Abstract: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a minor polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.