Abstract: A TFT includes an oxide semiconductor layer including a conductive region electrically connected to a source electrode, a conductive region electrically connected to a drain electrode, a channel region being an oxide semiconductor region that overlaps a gate electrode, and at least one resistive region being an oxide semiconductor region provided between the channel region and a conductive region adjacent to the channel region.

Abstract: There are provided wires in a frame area. The wires run parallel to each other in a direction crossing a direction in which a bending portion is extended. An inorganic insulating film has an opening therethrough in the bending portion. A top face of a resin substrate is exposed in the opening. The wires are provided on the inorganic insulating film and on the top face of the resin substrate exposed in the opening. In the opening, the top face of the resin substrate and an end face of the inorganic insulating film make a smaller angle below between the wires than below the wires.

Abstract: A first resin layer is provided to fill a slit formed in at least one inorganic insulating film included in a TFT layer, and extending in a longitudinal direction of a fold portion. A plurality of first routed wires are provided above the first resin layer, and extending in parallel with one another and intersecting with the longitudinal direction of the fold portion. A first protective layer is formed between, and in contact with, the first resin layer and the first routed wires, and provided to at least partially coincide with each of the first routed wires.

Abstract: Provided is an amorphous polyamide resin that has a small weight change rate under hot and humid conditions and that can maintain a good appearance even when formed into a molded article and placed under hot and humid conditions. Also provided is a molded article including the amorphous polyamide resin. An amorphous polyamide resin includes: constituent units derived from a diamine and constituent units derived from a dicarboxylic acid, not less than 70 mol % of the constituent units derived from a diamine being constituent units derived from isophoronediamine, the constituent units derived from a dicarboxylic acid including constituent units derived from an ?,?-straight chain aliphatic dicarboxylic acid having from 8 to 14 carbons and constituent units derived from an aromatic dicarboxylic acid.

Abstract: An electrode contact structure includes a first inorganic insulating film, a first electrode formed on the first inorganic insulating film, a second inorganic insulating film formed on the first inorganic insulating film and the first electrode to cover the first electrode, a second electrode formed on the second inorganic insulating film, a third inorganic insulating film formed on the second inorganic insulating film and the second electrode to cover the second electrode, and a third electrode configured to cover a contact hole formed in the third inorganic insulating film and the second inorganic insulating film, and electrically connect to each of the first electrode and the second electrode exposed in the contact hole.

Abstract: A display device includes: a base substrate; a TFT layer including a plurality of pixel circuits arranged; and a light-emitting element layer. Each of the plurality of pixel circuits includes: a TFT including a semiconductor layer, a gate insulating film, and a gate electrode; and a capacitor including the gate electrode, a first inorganic insulating film, and a capacitive electrode. The capacitive electrode extends all around a perimeter of the gate electrode and extends to an outside of the perimeter. An angle formed between an upper surface of the base substrate and at least a part of an end surface in a circumferential direction of the gate electrode not overlapping the semiconductor layer in the plan view is greater than an angle formed between the upper surface of the base substrate and an end surface of the gate electrode overlapping the semiconductor layer in the plan view.

Abstract: In a state overlapping a region surrounded by a pair of first wiring lines adjacent to each other among a plurality of first wiring lines extending in parallel to each other and formed by a first metal film, and a pair of third wiring lines among the plurality of third wiring lines extending in parallel to each other in a direction intersecting each of the plurality of first wiring lines, a first metal layer formed by the first metal film is provided in an island shape along the pair of third wiring lines adjacent to each other.

Abstract: A TEG near the perimeter of a frame region is away from a TFT, which is disposed in a display region and is actually used for screen display. Hence, the characteristics of the TEG can change in a manner different from that in the characteristics of the TFT within the display region. Accordingly, provided is a display device that includes a TEG pattern disposed between the display region and a trench, and includes a dummy pixel circuit disposed between the display region and a barrier wall. The TEG pattern is outside the display region and is adjacent to at least the dummy pixel circuit.

Abstract: In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.

Abstract: First overlying wires are provided between a display area and a bending portion, extending parallel to each other in a direction crossing the direction in which the bending portion extends. Underlying wires are provided between a first resin layer and a second resin layer on a resin substrate, extending across a slit and parallel to each other in a direction crossing the direction in which the bending portion extends. The first overlying wires are electrically connected respectively to the underlying wires via first contact holes formed through the second resin layer and inorganic insulation films.

Abstract: A display device is provided with a display area and a frame area on a flexible substrate. The display area includes a transistor and a light-emitting element, and the frame area surrounds the display area. The display device includes: an upper inorganic insulating film, a first upper metal layer, a first resin layer, a protective layer, a second upper metal layer, a second resin layer, and a third resin layer provided in a stated order above a semiconductor layer of a transistor. In a display area, the protective layer covering a whole upper face of the first resin layer comes into contact with an upper wire included in the second upper metal layer.

Abstract: In a clearance between neighboring two of touch panel wires, protrusions included in a second inorganic sealing film each protrude: from a first coating, coating an upper face of a first bank, toward a display area or away from the display area; or from a second coating, coating an upper face of a second bank, toward the display area or away from the display area.

Abstract: A display device includes a display layer that includes a TFT layer, a light-emitting element layer, a sealing layer, a bank, and a touch panel layer. The touch panel layer includes a plurality of touch-panel-use lines electrically connecting a terminal section to a plurality of sensing sections configured to transfer measurements. The plurality of touch-panel-use lines resides on the sealing layer so as to intersect with the bank in a plan view of the display device. The plurality of touch-panel-use lines comprises a first touch-panel-use line and a second touch-panel-use line that are adjacent to each other, an interlayer insulation film being interposed between the first touch-panel-use line and the second touch-panel-use line in an intersection where the first touch-panel-use line and the second touch-panel-use line intersect with the bank.

Abstract: A display device (1) includes: a substrate (2); and a first transistor (1a) formed on the substrate (2), The first transistor (1a) includes: an oxide semiconductor layer (4) formed on the substrate (2); a gate insulating layer (5) formed on the oxide semiconductor layer (4); and a gate electrode (6) formed on the gate insulating layer (5). The oxide semiconductor layer (4) includes: a conductive region (4a) provided with conductivity; a first resistance region (4b) positioned below the gate electrode (6); and a second resistance region (4c) provided between the conductive region (4a) and the first resistance region (4b), and positioned outside the gate electrode (6). The first resistance (4b) is larger in resistance than the second resistance region (4c).

Abstract: Provided are a polyamide resin, a molded article, and a method for producing the polyamide resin that excels in an oxygen barrier property, exhibits a sufficiently low yellowing index, and suppresses the occurrence of fish eyes. The polyamide resin includes a structural unit derived from a diamine and structural unit derived from a dicarboxylic acid, 70 mol % or more of the structural unit derived from a diamine being derived from meta-xylylenediamine, of the structural unit derived from a dicarboxylic acid, from 30 to 70 mol % being derived from an ?,?-linear aliphatic dicarboxylic acid having from 4 to 20 carbons, and from 70 to 30 mol % being derived from isophthalic acid (provided that a total of the structural unit derived from a dicarboxylic acid does not exceed 100 mol %). The polyamide resin includes a phosphorus atom at a proportion from 50 to 150 ppm by mass, and a sodium atom at a proportion such that a molar ratio of the phosphorus atom to the sodium atom is from 1:1 to 1:2.

Abstract: A stretched film, which has excellent impact resistance and oxygen barrier properties and which suppresses the number of pinholes after being bent, a packaging material using the same, and a method for producing the stretched film are provided.

Abstract: At a bending section of a frame region, an opening portion is formed, in at least one inorganic insulating film included in the TFT layer, through the at least one inorganic insulating film to expose an upper surface of a resin substrate, and a frame wiring line is provided on the resin substrate exposed through the opening portion, and among the at least one inorganic insulating film included in the TFT layer, an inorganic insulating film being in contact with the upper surface of the resin substrate is formed with a silicon oxynitride film.

Abstract: A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.

Abstract: A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Abstract: In a bending portion, a slit that exposes a resin substrate is formed in at least one inorganic insulating film, a first flattening film is provided so as to fill in the slit, each of a plurality of wiring lines is provided on the first flattening film and both end portions of the inorganic insulating film, the slit being formed at both end portions, a second flattening film is provided on each of the wiring lines, a plurality of conductive layers each having an island shape are provided on the second flattening film, and each of the wiring lines and a corresponding conductive layer are electrically connected via contact holes formed in the second flattening film.