Abstract: Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (2) and photodiode (6). First, on a substrate of glass (12), a silicon film (8) and an interlayer insulation film (15) for covering the silicon film (8) are formed in this order. Then, a metal film is formed, and metal lines (10, 11) traversing the silicon film (8) are formed by etching the metal film. Then, p-type impurity ions are implanted by using a mask that has an opening (24a) that exposes a portion that overlaps a region where a p-layer (9a) is to be formed, a part of the opening (24a) being formed with the metal line (10). Furthermore, n-type impurity ions are implanted by using a mask that has an opening (25b) that exposes a portion that overlaps a region where an n-layer (9c) is to be formed, a part of the opening (25a) being formed with the metal line (11).

Abstract: Provided is an elastic network structure having durability and cushioning properties suitable for furniture, bedding such as a bed, seats for vehicles, seats for shipping, etc., the network structure being lightweight and having excellent chemical resistance, excellent light resistance, soft repellency, and excellent cushioning characteristics in a low temperature environment. The elastic network structure comprises a three-dimensional random loop bonded structure obtained by forming random loops with curling treatment of a continuous linear structure having not less than 300 decitex, and by making each loop mutually contact in a molten state to weld the majority of contacted part, the continuous linear structure mainly including a low density polyethylene resin with a specific gravity of not more than 0.94 g/cm3.

Abstract: An aluminum alloy for cutting processing consists essentially of Cu: 1 to 6.5 mass %, Zn: 0.05 to 1 mass %, Bi: 0.1 to 1 mass %, Sn: 0.1 to 1 mass %, B: 100 mass ppm or less, or further includes at least one element as a selective additional element selected from the group consisting of Fe: 0.05 to 1 mass %, Mg: 0.01 to 0.3 mass %, Si: 0.05 to 1 mass % and Ti: 0.01 to 0.5 mass %.

Abstract: A first aluminum alloy of the present invention comprises Mg: 0.3-6 mass %, Si: 0.3-10 mass %, Zn: 0.05-1 mass %, Sr: 0.001-0.3 mass % and the balance being Al and impurities. A second aluminum alloy further contains one or more selective additional elements selected from the group consisting of Cu, Fe, Mn, Cr, Zr, Ti, Na and Ca. Furthermore, a third aluminum alloy comprises Mg: 0.1-6 mass %, Si: 0.3-12.5 mass %, Cu: 0.01 mass % or more but less than 1 mass %, Zn: 0.01-3 mass %, Sr:0.001-0.5 mass % and the balance being Al and impurities. Furthermore, a fourth aluminum alloy further includes one or more optional additional elements selected from the group consisting of Ti, B, C, Fe, Cr, Mn, Zr, V, Sc, Ni, Na, Sb, Ca, Sn, Bi and In.

Abstract: A first aluminum alloy of the present invention comprises Mg: 0.3-6 mass %, Si: 0.3-10 mass %, Zn: 0.05-1 mass %, Sr: 0.001-0.3 mass % and the balance being Al and impurities. A second aluminum alloy further contains one or more selective additional elements selected from the group consisting of Cu, Fe, Mn, Cr, Zr, Ti, Na and Ca. Furthermore, a third aluminum alloy comprises Mg: 0.1-6 mass %, Si: 0.3-12.5 mass %, Cu: 0.01 mass % or more but less than 1 mass %, Zn: 0.01-3 mass %, Sr: 0.001-0.5 mass % and the balance being Al and impurities. Furthermore, a fourth aluminum alloy further includes one or more optional additional elements selected from the group consisting of Ti, B, C, Fe, Cr, Mn, Zr, V, Sc, Ni, Na, Sb, Ca, Sn, Bi and In.