Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract: A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein in a treatment chamber where gas is sealed at a pressure exceeding a pressure in a molecular flow region.

Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

Abstract: A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein in a treatment chamber where gas is sealed at a pressure exceeding a pressure in a molecular flow region.

Abstract: The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. A temperature control method for a substrate heat treatment apparatus (1) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T1) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).

Abstract: A heat treatment apparatus including a vacuum vessel, a substrate stage which holds a substrate mounted on it, a heating unit for heating the substrate, and an exhaust unit for evacuating the vacuum vessel includes a first reflector which covers the upper portion of the exhaust port of the exhaust unit while being spaced apart from the exhaust port, and a second reflector which surrounds the exhaust port. At least one of reflector members which form the second reflector faces a direction defined from the heating unit to the exhaust port.

Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

Abstract: To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method.

Abstract: To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method.

Abstract: A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage.

Abstract: The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. A temperature control method for a substrate heat treatment apparatus (1) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T1) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).

Abstract: In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10?2 Pa, preferably not larger than 10?3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.

Abstract: The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.

Abstract: To provide a substrate supporting/transferring tray, which can be placed on a substrate supporting part arranged in a treatment chamber in which the heat treatment is performed to a substrate, especially on a substrate supporting part having a built-in heating means for heating the substrate, and on an upper side of which, the substrate is placed. At the time of heat-treating the substrate, the substrate can be more uniformly heated, and when the heat treatment is completed, the tray can be easily removed from the substrate supporting part without waiting for the temperature of the substrate to be reduced, and can transfer the substrate to other parts from the treatment chamber in which the heat treatment is performed.

Abstract: A heating process apparatus includes a process chamber, a heat-processed object support member provided in the process chamber for heating a substrate disposed thereon, a cap for covering the substrate disposed on the heat-processed object support member, a heater for heating the heat-processed object support member, a temperature measuring unit for measuring the temperature of the heat-processed object support member, and a controller for controlling the heater. A first measuring unit measures a temperature of the cap, and the controller controls the heater so as to set the cap temperature to a predetermined temperature. A second measuring unit measures a temperature of the heat-processed object support member, and the controller turns off the heater when the temperature of the heat-processed object support member exceeds an over-heat critical temperature.

Abstract: The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.

Abstract: Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus 1 includes a vacuum chamber 2 constituted by flanges 11 and 12 having an opening portion 9 and joined together, a turbo molecular pump 17 for exhausting gas from the vacuum chamber 2, and a heater base 3 for heating a substrate 5 placed in the vacuum chamber 2. Joint surfaces of the flanges 11 and 12 are sealed by an O ring 10. Further, bonding steps 13 are formed between the heater base 3 and the O ring 10 on the joint surfaces of the flanges 11 and 12, thereby preventing thermo-radiation from the heater base 3 from reaching the O ring 10 through the joint surfaces of the flanges 11 and 12.

Abstract: An apparatus for heat treating a substrate includes a substrate holder unit including a substrate stage on which a substrate is to be placed and which is made of one of a carbon and a carbon covered material, and a heating unit which is provided above the substrate stage and includes a heat dissipation surface opposing the substrate stage, and heats the substrate placed on the substrate stage in noncontact therewith radiation heat from the heat dissipation surface. In addition, a chamber contains the substrate holder unit and the heating unit, and an elevating device vertically moves at least one of the substrate holder unit and the heating unit in the chamber to bring the substrate stage and the heat dissipation surface of the heating unit close to each other or apart from each other. The substrate holder unit includes a radiation plate which is arranged under the substrate stage at a gap therefrom, and a reflection plate which is arranged under the radiation plate at a gap therefrom.

Abstract: A heating apparatus including a filament arranged in a vacuum heating vessel comprises a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to a conductive heater forming one surface of the vacuum heating vessel. The base plate comprises a plate body having a carbon fiber.