Abstract: A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Abstract: In a method for forming a Cu thin film on a substrate including a Cu-CVD step of forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step of further forming a second copper film on the first copper film by an electrolytic copper plating process using the first copper film as an electrode, a modifying step for modifying the first copper film by exposing it in an active atmosphere is interposed between the Cu-CVD step and the plating step. Thereby, fine voids can be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Abstract: An etching method for etching a masked silicon substrate in a vessel by introducing into the vessel an etching gas containing a gaseous chloride of silicon and a nitrogen-containing gas and converting the etching gas introduced in the vessel into a plasma. Ions and radicals are formed from the etching gas under plasma conditions, the ions impinging against the substrate in a sputtering action, and the radicals acting on the substrate to produce a volatile substance. The sputtering action and the volatile substances produce even etched surfaces without surface defects and simultaneously prevent the formation of a white powder, thus avoiding unetched or insufficiently etched portions and portions appearing to be black. In addition, this method makes it possible to realize superior anisotropism in the etching, while increasing the speed and selectivity of etching.