Abstract: In a manufacturing method for an interposer, a seed layer is formed at an opening portion in a through hole on back surface side of a substrate, an electrode layer for electroplated coating is formed based on the seed layer, and an electroplated coating layer is formed to fill the through hole from the electrode layer for electroplated coating layer to a front surface side. As a result, a manufacturing method for an interposer is provided in which the manufacturing process is simple and the void is not generated inside of the through hole.

Abstract: A displacement measurement apparatus for a microstructure according to the present invention measures a displacement of the microstructure having a fixed portion electrode including a first electrode and a second electrode and a movable portion electrode located oppositely to the fixed portion electrode. A bias generating circuit applies a bias signal to between the first electrode and the movable portion electrode so that influence of a noise signal on a detection signal picked up from between the second electrode and the movable portion electrode may be reduced. A C/V converting circuit converts a capacitance change that is picked up from between the second electrode and the movable portion electrode into a voltage. A detecting circuit detects a displacement of the movable portion electrode based on the voltage.

Abstract: A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).

Abstract: A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17and the second wiring layer 13, and therefore close the switch 10.

Abstract: An interposer is disclosed. The interposer includes a substrate capable of being processed by dry etching. The substrate includes a plurality of conductive holes penetrating from one side to the other side of said substrate. Each of said plurality of conductive holes has one end provided with a contact element on at least one side of said conductive hole.

Abstract: A method for manufacturing an interposer including a body and a plurality of probes connected to said body is disclosed. The method includes a step of manufacturing said body including the sub-steps of preparing a first substrate having one surface side and the other surface side and being capable of being processed by dry etching, forming a plurality of through holes in said first substrate by dry etching, and making said through holes into conductive holes capable of conducting electricity through a bottom-up fill process. The method also includes a step of manufacturing said plurality of probes and connecting the ends of said plurality of conductive holes on one surface side of said first substrate and a plurality of first probes on said second substrate.

Abstract: A through substrate which comprises a silicon substrate (10) having a through hole (19) penetrating a front surface (11) and a back surface (12), a oxidized silicon film (13) being provided along the inner wall surface of the through hole (19), layers (14, 15) comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film (13), and a Cu plating layer (18) which has been grown from a Cu seed layer (17) along the inner wall surface of layers (14, 15) comprising Zn and Cu, respectively, via an insulating layer (16) between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk.

Abstract: A speaker unit has a plurality of sound sources each outputting a sound wave. The compressional, sound wave output from the speaker unit arrives, or vibrates air, which moves a movable part of a three-axis acceleration sensor, or a microstructure of a chip to be tested TP. As the movable part thus moves, a value in resistance accordingly varies, and such variation is measured as based on an output voltage provided via a probe. A control unit determines a property of the three-axis acceleration sensor from a value in property as measured or measurement data. Furthermore, the plurality of sound sources can be spaced by a pitch of a predetermined value set as based on their difference in the distance to the movable part of the three-axis acceleration sensor and the wavelength of the test wave to apply a composite test wave to the movable part such that the composite sound wave's composite sound field is maximized.

Abstract: A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).

Abstract: A capacitance detection circuit containing an input protection circuit and having high sensitivity is provided. A capacitance detection circuit for detecting the capacitance of a capacitive sensor, comprising a buffer amplifier connected to the capacitive sensor via a signal wire and having a voltage gain of 1; diodes connected in series between the signal wire and a positive power supply; diodes connected in series between the signal wire and a negative power supply, wherein an output terminal of the buffer amplifier is connected to a junction point of the diodes and to a junction point of the diodes.

Abstract: A displacement measurement apparatus for a microstructure according to the present invention measures a displacement of the microstructure having a fixed portion electrode including a first electrode and a second electrode and a movable portion electrode located oppositely to the fixed portion electrode. A bias generating circuit applies a bias signal to between the first electrode and the movable portion electrode so that influence of a noise signal on a detection signal picked up from between the second electrode and the movable portion electrode may be reduced. A C/V converting circuit converts a capacitance change that is picked up from between the second electrode and the movable portion electrode into a voltage. A detecting circuit detects a displacement of the movable portion electrode based on the voltage.

Abstract: An inspecting method which is for a microstructure with a movable portion and executes a highly precise inspection without damaging a probe or an inspection electrode by supressing the effect of a needle pressure in contacting the probe to the inspection electrode is provided. When inspection on a microstructure is performed, first a pair of probes (2) are caused to contact respective electrode pads (PD), and the pair of probes (2) and a fritting power source (50) are connected together through relays (30). Next a voltage is applied from the fritting power source (50) to one probe (2) in the pair of probes (2). As the voltage is gradually increased, an oxide film between the pair of probes (2) is destroyed and a current flows between the pair of probes (2) by fritting phenomenon, and the probes (2) and the electrode pad (PD) are electrically conducted each other.

Abstract: A first wiring layer 16 is disposed on an insulating film 14 on the lower surface of an upper substrate 15, while a second wiring layer 13 three-dimensionally crossing the first wiring layer 16 is provided on the insulating film 12 on a lower substrate 11. A cantilever 17 has one end connected to the first wiring layer 16 and the other end opposed to the second wiring layer 13 with a space therebetween. A thermoplastic sheet 19 is arranged on the upper substrate 15 so as to cover the through-hole 18. The thermoplastic sheet 19 is pressed by a heated pin 20 against the cantilever 17 and deformed so as to maintain the connection between the cantilever 17 and the second wiring layer 13, and therefore close the switch 10.

Abstract: A microstructure inspecting apparatus for evaluating a characteristic of at least one microstructure having a movable section formed on a substrate, includes: a probe, which electrically connects with pads formed on the microstructure, for obtaining an electric signal of the microstructure; a plurality of nozzles, positioned in the vicinity of the movable section of the microstructure, for discharging or sucking a gas; a nozzle flow rate controller for controlling a flow rate of the gas discharged from or sucked into the plurality of nozzles; and an evaluation unit for detecting a displacement of the movable section of the microstructure by using the electric signal obtained through the probe, wherein the displacement is made by the gas discharged from or sucked into the plurality of nozzles, and evaluating the characteristic of the microstructure based on the detected result.

Abstract: Voltage is applied to a chip TP by a voltage drive unit 30 through a probe needle P to move a movable part of a microstructure. A sound produced in response to motion of the movable part of the microstructure is detected by a microphone 3. Then, the sound detected by the microphone 3 is measured by a measurement unit 25. The control unit 20 evaluates the characteristics of the tested chip TP by comparing with a sound detected from an ideal chip TP.

Abstract: There are provided an inspection device, an inspection method, and an inspection program for accurately inspecting a minute structure having a movable portion by using a simple method. A test sound wave is inputted and frequency characteristic of a sensor output voltage amplitude responding to the input of the test sound wave is analyzed. The maximum frequency and the minimum frequency of the device is calculated from estimated use conditions and it is judged whether it is possible to detect a desired characteristic in the frequency band. More specifically, the device is judged to be good or bad depending whether the response characteristic in a predetermined frequency band exceeds the minimum characteristic level as a threshold value.

Abstract: A speaker unit has a plurality of sound sources each outputting a sound wave. The compressional, sound wave output from the speaker unit arrives, or vibrates air, which moves a movable part of a three-axis acceleration sensor, or a microstructure of a chip to be tested TP. As the movable part thus moves, a value in resistance accordingly varies, and such variation is measured as based on an output voltage provided via a probe. A control unit determines a property of the three-axis acceleration sensor from a value in property as measured or measurement data. Furthermore, the plurality of sound sources can be spaced by a pitch of a predetermined value set as based on their difference in the distance to the movable part of the three-axis acceleration sensor and the wavelength of the test wave to apply a composite test wave to the movable part such that the composite sound wave's composite sound field is maximized.

Abstract: Disclosed is an interposer comprising a silicon substrate (20). A plurality of conductive holes (27) penetrating the silicon substrate (20) are formed by dry etching, and at least one end of each conductive hole (27) is provided with a probe (12) via a pad (45). Since conductive holes are formed in a substrate that can be processed by dry etching, a plurality of microscopic conductive holes can be continuously formed and a probe can be connected to each conductive hole. Consequently, there can be obtained an interposer wherein probes are arranged at high density.

Abstract: A capacitance detection circuit containing an input protection circuit and having high sensitivity is provided. A capacitance detection circuit (20) for detecting the capacitance of a capacitive sensor (Cs), comprising a buffer amplifier (12) connected to the capacitive sensor (Cs) via a signal wire (13) and having a voltage gain of 1; diodes (Dp1, Dp2) connected in series between the signal wire (13) and a positive power supply (+Vdd); diodes (Dm1, Dm2) connected in series between the signal wire (13) and a negative power supply (?Vdd), wherein an output terminal of the buffer amplifier (12) is connected to a junction point (21a) of the diodes (Dp1 and Dp2) and to a junction point (21b) of the diodes (Dm1 and Dm2).

Abstract: Test sound wave is outputted from a speaker. A movable part of a three-axis acceleration sensor, which is a micro structure of a chip to be tested TP, moves due to the arrival of the test sound wave which is compression wave outputted from the speaker, that is, due to air vibrations. A change in the resistance value that changes in accordance with this movement is measured on the basis of an output voltage that is provided via a probe needles. A control part determines the property of the three-axis acceleration sensor on the basis of the measured property values, that is, measured data.