Abstract: A method of manufacturing a semiconductor device has forming a first nitride layer over a substrate, forming a first oxide layer on the first nitride layer, forming a second nitride layer on the first oxide layer, forming a photoresist layer over the second nitride layer, forming a opening in the photoresist layer, etching the second nitride layer using the photoresist layer as a mask such that the opening is reached to the first oxide layer, etching the first oxide layer using the second nitride layer as a mask such that the opening is reached to the first nitride layer, etching the first oxide layer such that bottom zone of the opening is increased in diameter, and etching the first nitride layer using the first oxide layer as a mask such that the opening is reached to the substrate thereby to form contact hole reaching to the substrate.

Abstract: A reduction of a current capability of a MOS transistor (P1) is compensated by dynamically changing a substrate bias of the MOS transistor (P1) in response to a fluctuation of the power supply, and thus an operating speed is stabilized automatically. An NMOS transistor (N2) generates a current (I2) that changes in response to an extent of fluctuation of the power supply voltage, and then the current (I2) is converted into a voltage via a resistor (R3) to apply a forward bias to a substrate (back gate) of the MOS transistor (P1). When the current capability of the MOS transistor (P1) is reduced owing to a reduction of the power supply voltage, an adjustment is carried out automatically to lower a threshold voltage of the MOS transistor and thus the operating speed can be compensated.

Abstract: A functional block is divided into a plurality of regions. In each region, a clock main line extending along a first direction, a clock branch line group including a plurality of clock branch lines extending along a second direction perpendicular to the first direction and electrically connected to the clock main line, a clock driving cell electrically connected to the clock main line and a clock synchronous cell group including a plurality of clock synchronous cells electrically connected to the clock main line or the clock branch line group are provided. The clock branch line groups of the respective regions are electrically separated from each other, and the clock driving cell singly drives the clock main line connected thereto and the clock branch line group connected to the clock main line.

Abstract: In a semiconductor integrated circuit device, from a first power source strap supplying a potential to a first standard cell receiving a supply of the potential, the potential is supplied via a first cell power source line having a constant width. The width of the first cell power source line is determined in accordance with power consumed by the first standard cell and with the number of standard cells that can be placed between the first power source strap and a third power source strap.

Abstract: VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that provided to the source portion 305 and the drain portion 306 is provided to a substrate portion 307. If NWVDD 303 is set higher than VDD 301, a depletion layer 309 is spread, so that a leakage current can be reduced instead of reducing a capacitance of the decoupling capacitor. In addition, if NWVDD 303 is set lower than VDD 301 so as not to cause latchup, the depletion layer 309 is reduced, so that the capacitance of the decoupling capacitor can be increased. By changing the potential NWVDD 303 provided to the substrate portion 307, a capacitance value and a leakage current value of the decoupling capacitor can be controlled.

Abstract: By forming adjacent wiring 4 adjacent to signal wiring 3 and using a control circuit 13 comprising a 2-input NAND 20 circuit or the like to input a signal S4 corresponding to a signal S3 in the signal wiring 3 to the adjacent wiring 4, it is made possible to change the delay of the signal S3 in the signal wiring 3 in several picoseconds, by using crosstalk with the signal S4 in the signal wiring 4.The inventive delay control circuit device can be provided by simply adding adjacent wiring 4 and a control circuit 13 to signal wiring 3. This implements a delay control circuit device for semiconductor integrated circuits that is capable of controlling a signal delay in several picoseconds without increasing the circuit scale.

Abstract: A reduction of a current capability of a MOS transistor (P1) is compensated by dynamically changing a substrate bias of the MOS transistor (P1) in response to a fluctuation of the power supply, and thus an operating speed is stabilized automatically. An NMOS transistor (N2) generates a current (I2) that changes in response to an extent of fluctuation of the power supply voltage, and then the current (I2) is converted into a voltage via a resistor (R3) to apply a forward bias to a substrate (back gate) of the MOS transistor (P1). When the current capability of the MOS transistor (P1) is reduced owing to a reduction of the power supply voltage, an adjustment is carried out automatically to lower a threshold voltage of the MOS transistor and thus the operating speed can be compensated.

Abstract: VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that provided to the source portion 305 and the drain portion 306 is provided to a substrate portion 307. If NWVDD 303 is set higher than VDD 301, a depletion layer 309 is spread, so that a leakage current can be reduced instead of reducing a capacitance of the decoupling capacitor. In addition, if NWVDD 303 is set lower than VDD 301 so as not to cause latchup, the depletion layer 309 is reduced, so that the capacitance of the decoupling capacitor can be increased. By changing the potential NWVDD 303 provided to the substrate portion 307, a capacitance value and a leakage current value of the decoupling capacitor can be controlled.

Abstract: A standard cell for a plurality of power supplies comprises a first power line and a second power line electrically isolated from the first power line. An N well is arranged in spaced relation with the whole peripheral boundaries of the standard cell. In the case where the standard cells are arranged adjacently to each other in the direction along the power lines or in the direction orthogonal thereto, the N well in the standard cell for a plurality of power supplies is isolated from the N wells of the adjacent standard cells in the direction along the power lines or in the direction orthogonal thereto, as the case may be.

Abstract: An electromagnetic disturbance analysis method for analyzing an external noise to a semiconductor integrated circuit includes an impedance extraction step of extracting impedance information on the power wiring in the target semiconductor integrated circuit or the power wiring in the semiconductor integrated circuit and the external power wiring of the semiconductor integrated circuit, an equivalent circuit creating step of creating an equivalent circuit from the impedance information, and an analysis step of supplying a noise waveform externally and analyzing the influence of the noise on the semiconductor integrated circuit.

Abstract: A standard cell for a plurality of power supplies comprises a first power line and a second power line electrically isolated from the first power line. An N well is arranged in spaced relation with the whole peripheral boundaries of the standard cell. In the case where the standard cells are arranged adjacently to each other in the direction along the power lines or in the direction orthogonal thereto, the N well in the standard cell for a plurality of power supplies is isolated from the N wells of the adjacent standard cells in the direction along the power lines or in the direction orthogonal thereto, as the case may be.

Abstract: By forming adjacent wiring 4 adjacent to signal wiring 3 and using a control circuit 13 comprising a 2-input NAND 20 circuit or the like to input a signal S4 corresponding to a signal S3 in the signal wiring 3 to the adjacent wiring 4, it is made possible to change the delay of the signal S3 in the signal wiring 3 in several picoseconds, by using crosstalk with the signal S4 in the signal wiring 4.The inventive delay control circuit device can be provided by simply adding adjacent wiring 4 and a control circuit 13 to signal wiring 3. This implements a delay control circuit device for semiconductor integrated circuits that is capable of controlling a signal delay in several picoseconds without increasing the circuit scale.

Abstract: An electromagnetic disturbance analysis method for analyzing an external noise to a semiconductor integrated circuit includes an impedance extraction step of extracting impedance information on the power wiring in the target semiconductor integrated circuit or the power wiring in the semiconductor integrated circuit and the external power wiring of the semiconductor integrated circuit, an equivalent circuit creating step of creating an equivalent circuit from the impedance information, and an analysis step of supplying a noise waveform externally and analyzing the influence of the noise on the semiconductor integrated circuit.

Abstract: There is disclosed a cover unit of an exhaust manifold device in which sound-and-heat shielding covers are attached via bosses to upper and lower parts of exhaust manifold inlet ducts integral with flanges secured to a cylinder head. The cover unit has such a structure that when securing the flanges to the cylinder head, a portion, of a lower cover, on which a tool inserted to rotate bolts for fastening the flanges impinges undergoes a predetermined amount of deformation to admit insertion of the tool.