Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion.

Abstract: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. The sub resonator has a mass addition film on the upper electrode in a resonance area in which the upper electrode and the lower electrode face each other. At least one of the main resonator and the sub resonator is provided with a frequency control film on an upper side of the resonance area, and the frequency control film has a weight per unit area smaller than a weight of the mass addition film per unit area.

Abstract: A demultiplexer has a common terminal, a transmission terminal, and a reception terminal, and furthermore includes a transmission filter connected between the common terminal and the transmission terminal, a reception filter connected between the common terminal and the reception terminal, and a phase shift circuit connected in series to the reception filter connected between the common terminal and the reception terminal. A node on the line from the phase shift circuit to the common terminal or the transmission terminal, and a node on the line from the phase shift circuit to the reception terminal are coupled via a reactance. Accordingly, it is possible to fundamentally reduce or eliminate the situation in which transmission signals from the transmission filter arrive at the reception circuit, and improve isolation.

Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.

Abstract: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. A frequency control film is provided on an upper side of a resonance area in which the upper electrode and the lower electrode face each other in at least one of the main resonator and the sub resonator. The frequency control film has multiple convex patterns, and the convex patterns are arranged with a common pitch for spurious adjustment and with different areas in the main resonator and the sub resonator.

Abstract: An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion.

Abstract: A duplexer with a reduced filter loss is provided. The duplexer includes two or more filters F1 and F2 that are connected to a common terminal and that have different passbands. At least one of the filters F1 and F2 includes a plurality of series resonators S1 to Sn connected in series to a path between an input terminal and an output terminal of the filter, and parallel resonators P1 to Pm connected in parallel to the above-mentioned path. An inductance L1 is connected in parallel to at least one of the series resonators, and the series resonator S1 having the inductance L1 connected in parallel thereto is divided into a plurality of resonators S11 to S13 connected in series.

Abstract: A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.

Abstract: A filter includes: a converter circuit, provided with a single-type common terminal and two balanced terminals, for performing conversion between a balanced line and an unbalanced line; two filter units coupled to each of the balanced terminals of the converter circuit and allowing passage of a signal in a pass band; and a bridging capacitor arranged to extend across the converter circuit and one of the filter units in a bridging manner, wherein the inductance of an opposite-side line of one of the filter units relative to the converter circuit is electromagnetically coupled to the inductance of a line coupling the other filter unit and the converter circuit.

Abstract: A piezoelectric thin film resonant element includes a resonant portion having a laminate structure made up of a lower electrode, an upper electrode and a piezoelectric film arranged between these two electrodes. The lower electrode has an ellipsoidal plan-view shape and an outer circumference formed with an inclined portion inclined at an angle (about 30° for example) lying within a range of 25° through 55°. The upper electrode has an ellipsoidal plan-view shape. An additional film is provided on the upper electrode at a portion corresponding to the inclined portion of the lower electrode.

Abstract: An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonance frequency frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap.

Abstract: A filter includes: a first filter unit includes: a series resonators connected in series to each other between a first input terminal and a first output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to a ground terminal, and a second filter unit includes: a series resonators connected in series to each other between a second input terminal and a second output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to the ground terminal.

Abstract: A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.

Abstract: A filter has a filter section that is provided with a balanced input terminal including a terminal 1 and a terminal 2 and a balanced output terminal including a terminal 3 and a terminal 4, and that passes a signal in a passband out of input balanced signals, and a balanced-to-unbalanced converter that is connected between the filter section and a single terminal. In the filter section, the frequency transfer characteristics between the terminals 1 and 3 differ from the frequency transfer characteristics between the terminals 2 and 4.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate.

Abstract: A duplexer of the present invention includes a reception filter (3) for passing signals in a predetermined frequency band and attenuates signals in the other frequency bands among reception signals input to an antenna port, and a transmission filter (4) for passing signals in a predetermined frequency band and attenuates signals in the other frequency bands among transmission signals input from the outside and outputting them to the antenna port. The duplexer further includes a conversion circuit (22) provided with a single-ended input terminal connected to the antenna port and balanced output terminals. The reception filter (3) is provided with a balanced input terminal connected to the output terminal of the conversion circuit (22) and a balanced output terminal for outputting the filtered reception signal.

Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.

Abstract: A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.

Abstract: A ceramic heater is provided that has a heat generating resistor and a lead member which supplies electric power to the heat generating resistor buried in a ceramic body, and exhibits excellent durability by controlling the cross sectional shape and plan configuration of the heat generating resistor.