Abstract: A control method in which a computer executes processing includes: specifying a first data group of which a processing load of a query is less than a first reference value, in a first data constellation, based on statistical information that indicates a statistical value regarding the processing load of the query, for each data group to be an access unit of the query, in the first data constellation included in a first execution environment included in a plurality of execution environments that has different data constellations; specifying a second execution environment that has a second data constellation that includes the specified first data group, included in the plurality of execution environments, other than the first execution environment; and controlling the plurality of execution environments to transmit a new query that uses the specified first data group as an access unit to the specified second execution environment.

Abstract: A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: A PC includes: a frame designing section configured to design a communications frame of a communications protocol; and a protocol driver generating section configured to generate a protocol driver in accordance with the communications frame having been designed. The frame designing section includes: a providing section configured to provide a graphics object that graphically represents an element of at least one segment of the communications frame and that contains information on the size of the element, in a manner that enables the graphics object to be selected and to be disposed in the at least one segment; and a setting section configured to set the property of the element represented by the graphics object having been disposed.

Abstract: A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device comprising a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: A power module apparatus (10) comprises: a power module (100A) comprising a package (110) configured to seal a perimeter of a semiconductor device, and a heat radiator (42) bonded to one surface of the package; a cooling device (30) comprising a coolant passage (33) through which coolant water flows, in which the heat radiator is attached to an opening (35) provided on a way of the coolant passage, wherein the heat radiator (42) of the power module (100A) is attached to the opening (35) of the cooling device (30) so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: A power module apparatus (10) comprises: a power module (100A) comprising a package (110) configured to seal a perimeter of a semiconductor device, and a heat radiator (42) bonded to one surface of the package; a cooling device (30) comprising a coolant passage (33) through which coolant water flows, in which the heat radiator is attached to an opening (35) provided on a way of the coolant passage, wherein the heat radiator (42) of the power module (100A) is attached to the opening (35) of the cooling device (30) so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: An anisotropic conductive film includes an insulating adhesive layer and conductive particles disposed thereon. Arrangement axes of the conductive particles having a particle pitch extend in a widthwise direction of the film, and the axes are sequentially arranged with an axis pitch in a lengthwise direction of the film. The particle pitch, axis pitch of the axes, and an angle ? of the axes relative the widthwise direction of the film are determined according to external shapes of terminals so 3 to 40 conductive particles are present on each terminal when a terminal arrangement region of an electronic component is superimposed on the film so a lengthwise direction of each terminal is aligned with the widthwise direction of the film. By using the film, stable connection reliability is obtained and an excessive increase in the density of the conductive particles is suppressed even in the connection of fine pitches.

Abstract: The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically connected to the semiconductor device; and a stress buffering layer disposed on an upper surface of the semiconductor device, and capable of buffering a CTE difference between the semiconductor device and the leadframe. The leadframe is connected to the semiconductor device via the stress buffering layer, a CTE of the stress buffering layer is equal to or less than a CTE of the leadframe, and a cross-sectional shape of the stress buffering layer is L-shape. There is provided: the power module capable of realizing miniaturization and large current capacity, and reducing cost thereof by using leadframe structure, and capable of reducing a variation in welding and improving a yield without damaging a semiconductor device; and a fabrication method for such a power module.

Abstract: A power module includes: a first insulating substrate including a first conductive layer; a first semiconductor device Q4 disposed on the first conductive layer 14D, the first semiconductor device of which one side of a main electrode is connected to the first conductive layer; a second insulating substrate disposed on the first insulating substrate so as to be opposite to the first semiconductor device and including a second conductive layer and a third conductive layer; a first pillar electrode connecting between the first conductive layer and the second conductive layer; and a second pillar electrode connecting between another side of the main electrode of the first semiconductor device and the third conductive layer. The second conductive layer is connected to any one of a positive or negative electrode pattern for supplying power to the first semiconductor device, and the third conductive layer is connected to another electrode pattern.

Abstract: A semiconductor device includes: a substrate; at least one semiconductor chip disposed on the substrate; a first resin layer disposed on the semiconductor chip, the first resin layer formed so as to cover the substrate and the semiconductor chip; a second resin layer disposed on the first resin layer, the second resin layer having a CTE smaller than a CTE of the first resin layer and having a coefficient of elasticity larger than a coefficient of elasticity of the first resin layer, wherein the second resin layer is formed so as to cover at least an upper surface of the first resin layer. There is provided the semiconductor device and a power module, capable of reducing a thermal resistance to improve a current density by reducing warpage of the semiconductor device, and capable of realizing cost reduction and miniaturization thereof by reducing the number of chips.

Abstract: A power module apparatus (10) comprises: a power module (100A) comprising a package (110) configured to seal a perimeter of a semiconductor device, and a heat radiator (42) bonded to one surface of the package; a cooling device (30) comprising a coolant passage (33) through which coolant water flows, in which the heat radiator is attached to an opening (35) provided on a way of the coolant passage, wherein the heat radiator (42) of the power module (100A) is attached to the opening (35) of the cooling device (30) so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Abstract: An anisotropic conductive film includes an insulating adhesive layer and conductive particles disposed thereon. Arrangement axes of the conductive particles having a particle pitch extend in a widthwise direction of the film, and the axes are sequentially arranged with an axis pitch in a lengthwise direction of the film. The particle pitch, axis pitch of the axes, and an angle ? of the axes relative the widthwise direction of the film are determined according to external shapes of terminals so 3 to 40 conductive particles are present on each terminal when a terminal arrangement region of an electronic component is superimposed on the film so a lengthwise direction of each terminal is aligned with the widthwise direction of the film. By using the film, stable connection reliability is obtained and an excessive increase in the density of the conductive particles is suppressed even in the connection of fine pitches.

Abstract: An access point includes: detection means detecting radar signal; detection notification means notifying other access point of radar signal detection; assessment means assessing whether to own authority to determine channel used among access points; determination means determining channel used among access points when detection means detects radar signal or when other access point notifies of radar signal detection, when owning authority; channel notification means notifying other access point of the channel determined by determination means; and change means changing the channel used between other access point to either the channel determined by determination means or to a channel notified from other access point. When a plurality of access points detect radar signal, entire system is operable through new channel.

Abstract: There is disclosed a power conversion apparatus 3 for converting polyphase ac power directly to ac power. A conversion circuit includes first switching devices 311, 313, 315 and second switching devices 312, 314, 316 connected, respectively, with the phases R, S, T of the polyphase ac power, and configured to enable electrical switching operation in both directions. There are provided input lines R, S, T connected with input terminals of the switching devices and output lines P, N connected with output terminals of the switching devices. The output terminals of the first switching devices and the output terminals of the second switching devices are, respectively, arranged in a row. The first switching devices and second switching devices are arranged side by side with respect to a direction of the rows. The output lines are disposed below the input lines in an up and down direction.

Abstract: An anisotropic electrically conductive film that is suitable for use in fine-pitch FOG connections and COG connections and that also can reduce increases in production costs associated with increasing the electrically conductive particle density. The anisotropic electrically conductive film includes an electrically insulating adhesive layer and electrically conductive particles disposed within the electrically insulating adhesive layer. The anisotropic electrically conductive film has electrically conductive particle disposition regions that are disposed in a manner corresponding to the arrangement of terminals of electronic components to be connected. The electrically conductive particle disposition regions are formed periodically in the longitudinal direction of the anisotropic electrically conductive film.

Abstract: The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically connected to the semiconductor device; and a stress buffering layer disposed on an upper surface of the semiconductor device, and capable of buffering a CTE difference between the semiconductor device and the leadframe. The leadframe is connected to the semiconductor device via the stress buffering layer, a CTE of the stress buffering layer is equal to or less than a CTE of the leadframe, and a cross-sectional shape of the stress buffering layer is L-shape. There is provided: the power module capable of realizing miniaturization and large current capacity, and reducing cost thereof by using leadframe structure, and capable of reducing a variation in welding and improving a yield without damaging a semiconductor device; and a fabrication method for such a power module.

Abstract: The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically connected to the semiconductor device; and a stress buffering layer disposed on an upper surface of the semiconductor device, and capable of buffering a CTE difference between the semiconductor device and the leadframe. The leadframe is connected to the semiconductor device via the stress buffering layer, a CTE of the stress buffering layer is equal to or less than a CTE of the leadframe, and a cross-sectional shape of the stress buffering layer is L-shape. There is provided: the power module capable of realizing miniaturization and large current capacity, and reducing cost thereof by using leadframe structure, and capable of reducing a variation in welding and improving a yield without damaging a semiconductor device; and a fabrication method for such a power module.

Abstract: Provided is an anisotropic conductive film that allows conductive particles to be sufficiently captured even by connecting terminals disposed at a fine pitch and can suppress a short circuit, and in particular, that can suppress variation of conduction resistance of a connection portion even when partial contact is caused by a thermal pressing tool during anisotropic conductive connection. In an anisotropic conductive film 1A, an insulating adhesive layer 3 contains conductive particles 2. The conductive particles 2 have an aspect ratio of 1.2 or more and are dispersed without being in contact with each other as viewed in a plan view, and an angle formed between a film surface S of the anisotropic conductive film 1A and a major axis direction of each of the conductive particles 2 is less than 40°. The anisotropic conductive film 1A preferably contains columnar conductive glass particles as the conductive particles 2.