Abstract: To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Abstract: A resistive element includes: a semiconductor substrate; a first insulating film deposited on the semiconductor substrate; a resistive layer deposited on the first insulating film; a second insulating film deposited to cover the first insulating film and the resistive layer; a first electrode deposited on the second insulating film and electrically connected to the resistive layer; a relay wire deposited on the second insulating film without being in contact with the first electrode, and including a resistive-layer connection terminal electrically connected to the resistive layer and a substrate connection terminal connected to the semiconductor substrate with an ohmic contact; and a second electrode deposited on a bottom side of the semiconductor substrate, wherein a resistor is provided between the first electrode and the second electrode.

Abstract: An electric power supply device for supplying electric power from a supply side device to a receiver side device including a mechanism section that operates intermittently with a drive voltage and a receiver side control section that controls an operation of the mechanism section with a control voltage that is lower than the drive voltage, the electric power supply device including: a regulator section, which is provided on the receiver side device, that converts a received voltage received via an electric power supply into the control voltage; a supply voltage adjusting section, which is provided on the supply side device, that adjustably supplies the received voltage; and a supply side control section, which is provided on the supply side device, that controls the received voltage by controlling the supply voltage adjusting section.

Abstract: A dummy element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a first resistive layer deposited on the lower insulating film; an interlayer insulating film covering the first resistive layer; a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate; a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact; and a counter electrode allocated under the semiconductor substrate, the dummy element simulating a defective state in the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode included in a corresponding resistive element as a target to be examined.

Abstract: In order to provide a vehicle lamp capable of reliably preventing dust from entering a lamp chamber, this invention is equipped with a lamp housing (10) provided with a breathing hole (15), and a cap (2) provided with a breathing port (23). The breathing hole (15) is positioned above the breathing port (23). A breathing passage (3) is provided between the lamp housing (10) and the cap (2). A projecting part (17) is provided on the lamp housing (10). The tip of the projecting part (17) and the cap (2) form a throttle part (30) therebetween. As a result, this invention makes it possible to reliably prevent dust (4) from entering a lamp chamber (13).

Abstract: Provided is a resistance element, including: a semiconductor substrate; a first insulating film stacked on the semiconductor substrate; a resistance layer selectively stacked on the first insulating film; a first auxiliary film separated from the resistance layer; a second auxiliary film separated from the resistance layer in a direction different from that of the first auxiliary film; a second insulating film stacked on the first insulating film to cover the resistance layer, and the first auxiliary film and the second auxiliary film; a first electrode connected to the resistance layer and stacked on the second insulating film disposed on an upper side of the first auxiliary film; and a second electrode connected to the resistance layer by being separated from the first electrode and stacked on the second insulating film on the upper side of the second auxiliary film.

Abstract: A spool rest is provided in a thread standing device of a sewing machine so as to hold a thread spool to be attachable and detachable by inserting a support installed to protrude from a thread standing base, in a cylinder portion formed at a center of the thread spool around which a sewing thread to be fed to the sewing machine is wound, the spool rest is a polygonal plate installed on the thread standing base and includes a through-hole that the support provided at a center portion of a placement surface for placing the thread spool penetrates, and a thread passing groove is formed from the center portion of the placement surface toward an outer edge portion.

Abstract: A resistive element includes: a resistive layer having a rectangular shape defined by a resistance length direction and a resistance width direction orthogonal to the resistance length direction; a first outer contact and a first inner contact allocated on one side of the resistive layer defined in the resistive length direction; and a second outer contact and a second inner contact allocated on another side of the resistive layer defined in the resistive length direction, wherein, as viewed in the resistance length direction, the first inner contact is shifted from the second inner contact, the first inner contact is at least partly opposed to the second outer contact, and the second inner contact is at least partly opposed to the first outer contact.

Abstract: In a constant voltage clamping circuit, a p-type anode region and an n-type pickup region are provided separated from each other in an n?-type well region. In the p-type anode region, a p?-type low-concentration anode region is provided. In the p?-type low-concentration anode region, an n+-type cathode region is provided. A first Zener diode of a highest potential of the constant voltage clamping circuit is formed by a pn junction of the p-type anode region, the p?-type low-concentration anode region and the n+-type cathode region. An n+-type pickup contact region in the n-type pickup region is arranged at a position near the n+-type cathode region and separated farther the n+-type cathode region, from p+-type anode contact region. The n+-type pickup contact region and the p+-type anode contact region are short-circuited.

Abstract: A resistive element includes: a semiconductor substrate; a first insulating film deposited on the semiconductor substrate; a resistive layer deposited on the first insulating film; a second insulating film deposited to cover the first insulating film and the resistive layer; a first electrode deposited on the second insulating film and electrically connected to the resistive layer; a relay wire deposited on the second insulating film without being in contact with the first electrode, and including a resistive-layer connection terminal electrically connected to the resistive layer and a substrate connection terminal connected to the semiconductor substrate with an ohmic contact; and a second electrode deposited on a bottom side of the semiconductor substrate, wherein a resistor is provided between the first electrode and the second electrode.

Abstract: A resistive element includes: a resistive layer having a rectangular shape defined by a resistance length direction and a resistance width direction orthogonal to the resistance length direction; a first outer contact and a first inner contact allocated on one side of the resistive layer defined in the resistive length direction; and a second outer contact and a second inner contact allocated on another side of the resistive layer defined in the resistive length direction, wherein, as viewed in the resistance length direction, the first inner contact is shifted from the second inner contact, the first inner contact is at least partly opposed to the second outer contact, and the second inner contact is at least partly opposed to the first outer contact.

Abstract: A contactless electric power supply device includes: a supply coil provided on a supply side device; a high frequency power source circuit that applies high frequency voltage to the supply coil; a receiver coil provided on a receiver side device that is arranged facing the supply side device, the receiver coil receiving high frequency electric power by contactless electric power supply via electromagnetic coupling with the supply coil; a receiver circuit that converts the high frequency electric power received by the receiver coil and supplies power to an electric load of the supply side device; and a supplementary coil provided on the supply side device, the supplementary coil interlinking with at least a portion of a magnetic circuit that electromagnetically couples the supply coil and the receiver coil.

Abstract: A sewing machine includes a vertical shuttle and a middle shuttle presser disposed at a front side of the vertical shuttle. The sewing machine includes a presser frame, an optical upper thread detector and a stitch skipping detection processor. The presser frame is movably supported between a pressing position at which the middle shuttle presser is pressed and a retract position separated from the pressing position. The optical upper thread detector is provided at the presser frame and is configured to detect passage of an upper thread using detecting light which passes through passage portions formed in the middle shuttle presser and which crosses a front side of a bobbin case of the vertical shuttle. The stitch skipping detection processor is configured to determine whether the passage of the upper thread is present based on an amount of received light of the detecting light from the upper thread detector.

Abstract: A constant temperature water supply system that adjusts water from a water supply source to a constant temperature by a constant temperature water supply apparatus and supplies the water to a processing apparatus. The constant temperature water supply apparatus is provided with water temperature adjusting units that adjust processing water and cooling water to predetermined temperatures and temperature adjustment control units that reset predetermined temperatures of the water temperature adjusting units. The processing apparatus is provided with water temperature detectors that detect the water temperatures of the processing water and the cooling water and water temperature managing units that each calculate the temperature difference between the water temperature detected by the water temperature detector and a desired temperature set in advance.

Abstract: To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Abstract: In a constant voltage clamping circuit, a p-type anode region and an n-type pickup region are provided separated from each other in an n?-type well region. In the p-type anode region, a p?-type low-concentration anode region is provided. In the p?-type low-concentration anode region, an n+-type cathode region is provided. A first Zener diode of a highest potential of the constant voltage clamping circuit is formed by a pn junction of the p-type anode region, the p?-type low-concentration anode region and the n+-type cathode region. An n+-type pickup contact region in the n-type pickup region is arranged at a position near the n+-type cathode region and separated farther the n+-type cathode region, from p+-type anode contact region. The n+-type pickup contact region and the p+-type anode contact region are short-circuited.

Abstract: Aspects of the invention can include a semiconductor device, control IC for switching power supply and switching power supply unit, which allow input voltage detecting function to be realized without resistor-voltage dividing circuit. An npn-type element consisting of p-type region, collector region and emitter region is included inside of drain region of starting element. On a first interlayer insulating film, aspects of the invention can provide collector electrode wiring of npn-type element, emitter-drain electrode wiring serving as both emitter electrode wiring of npn-type electrode and drain electrode wiring of starting element, source electrode wiring of starting element, and gate electrode wiring of starting element. A first metal wiring can serve both as input terminal of starting element and input terminal of npn-type element is connected to collector electrode wiring. The npn-type element can function as input voltage detecting means for detecting input voltage drop applied to the first wiring.

Abstract: A capacitor includes a capacitor element including a positive electrode body and a negative electrode body that are layered with a separator and wound; a positive electrode portion formed onto one end face of the capacitor element, and being pulled out from the positive electrode body; a negative electrode portion formed onto the same end face as the positive electrode portion, and being pulled out from the negative electrode body, an insulating space being disposed between the negative electrode portion and the positive electrode portion; and current collecting plates on a positive electrode side and a negative electrode side connected to a side of flattened portions on the positive electrode portion and the side of flattened portions on the negative electrode portion by welding in a direction intersecting the positive electrode body and the negative electrode body that are layered, respectively.

Abstract: Provided is a method for producing 5-aminolevulinic acid or a salt thereof at a high yield using 5-aminolevulinic acid-producing microorganisms. The method for producing 5-aminolevulinic acid or a salt thereof comprises culturing 5-aminolevulinic acid-producing microorganisms in a medium comprising one or more components selected from the group consisting of L-arginine, glutamic acid, and a salt thereof. The content of glutamic acid or the salt thereof is from 42 to 100 mM in the medium as the glutamic acid.

Abstract: A constant temperature water supply system that adjusts water from a water supply source to a constant temperature by a constant temperature water supply apparatus and supplies the water to a processing apparatus. The constant temperature water supply apparatus is provided with water temperature adjusting units that adjust processing water and cooling water to predetermined temperatures and temperature adjustment control units that reset predetermined temperatures of the water temperature adjusting units. The processing apparatus is provided with water temperature detectors that detect the water temperatures of the processing water and the cooling water and water temperature managing units that each calculate the temperature difference between the water temperature detected by the water temperature detector and a desired temperature set in advance.